Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers
Xutao Zhang,Ruixuan Yi,Nikita Gagrani,Ziyuan Li,Fanlu Zhang,Xuetao Gan,Xiaomei Yao,Xiaoming Yuan,Naiyin Wang,Jianlin Zhao,Pingping Chen,Wei Lu,Lan Fu,Hark Hoe Tan,Chennupati Jagadish
DOI: https://doi.org/10.1021/acsnano.1c02425
IF: 17.1
2021-05-10
ACS Nano
Abstract:We present single-mode nanowire (NW) lasers with an ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by an excellent NW morphology and InGaAs/GaAs multiquantum disks. At 5 K, a threshold low as 1.6 μJ/cm<sup>2</sup> per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface nonradiative recombination, single-mode lasing operation is obtained with a threshold of only 48 μJ/cm<sup>2</sup> per pulse at room temperature with a high characteristic temperature of 223 K and power output of ∼0.9 μW. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c02425?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c02425</a>.Normalized PL spectral mapping of the InGaAs QDs; energy-dispersive spectroscopy (EDS) analysis; schematic diagram of the experiment setup; transverse mode simulations; lasing power output measurement; emission spectra of a GaAs/InGaAs multi-QD NW; lasing characterization from two different GaAs/InGaAs multi-QD NWs; the spontaneous emission spectra under low pump fluence; lasing characterization from a GaAs/InGaAs multi-QDs NW at 180 K; emission spectra from a GaAs/InGaAs/AlGaAs multi-QD NW at different temperatures; simulations of the polarization dependence; mode hopping analysis; optical image from a GaAs/InGaAs/AlGaAs multi-QD NW; and growth conditions (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c02425/suppl_file/nn1c02425_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology