Abstract:In this study, we report the fabrication of cadmium-doped indium sulfide thin films (In 2 S 3 :Cd) using a low-cost nebulizer-aided spray pyrolysis process at 350 °C on glass substrates for photo-sensing applications. The impact of 0, 2, 4, and 8 wt% cadmium concentrations on the structure, morphology, optical properties, and photo-sensing capabilities of In 2 S 3 thin films were examined systematically. From X-ray diffraction (XRD) analysis, the major peak is located in the (103) plane for all Cd-doped In 2 S 3 thin film samples, and the maximum crystallite size for the 4 wt% sample is 59 nm. The field emission scanning electron microscope (FESEM) image revealed a homogenous large-grained surface of Cd-doped In 2 S 3 film that completely covered the substrate. UV–Vis absorption analysis demonstrated good absorption for all thin film samples in the visible and ultraviolet regions of the electromagnetic spectrum, particularly, the 4% Cd-doped concentration showed excellent absorption as is observed from Tauc relation. The highest PL intensity at 680 nm was observed for the sample coated with 4 wt% of Cd. Under UV light, the I – V behavior depicts a light current of 1.06 × 10 –6 A for a 5 V bias voltage. The In 2 S 3 : Cd (4%) sample had the highest responsivity of 2.12 × 10 −1 A/W and a detectivity of 1.84 × 10 11 Jones, with a high EQE of 50%. The study manifests that the developed Cd (4%)-doped In 2 S 3 thin film sample might be better suited for the application of photodetectors.

Effect of substrate temperature on In2S3 thin films using nebulizer spray pyrolysis method for photodetector applications

Effect of coating temperature on the physical properties of Bi2S3 thin films for photodetector applications

Effect of Substrate Temperature on Structural and Optical Properties of In2S3 Thin Films Grown by Thermal Evaporation

Photo-sensing properties of Cd-doped In2S3 thin films fabricated via low-cost nebulizer spray pyrolysis technique

Preparation of In_2S_3 Thin Films by Ultrasonic Spray Pyrolysis and the Influence of Post Rapid Thermal Process

Effect of annealing temperature on SnS thin films for photodetector applications

PHOTOTHERMAL DEFLECTION ANALYSIS OF [math]-In2S3 THIN FILMS: THE EFFECT OF S/In MOLAR RATIOS

Substrate Temperature Dependent Physical Properties of In(2)S(3) Films

Effect of Heat Treatment in Sulfur on Structural, Optical and Electrical Properties of Thermally Evaporated In2S3 Thin Films

Optical Properties of Thermally Evaporated in 2 S 3 Thin Films Measured Using Photoacoustic Spectroscopy

Effect of substrate temperature on Cu 2-x O growth for enhanced photodetector performance in visible region

Vapor Transport Deposition of Sb2Se3 Thin Films for Photodetector Application

Terbium-doped SnS thin films: comprehensive physical and optoelectronic characterizations for the photodetector applications

Temperature Controlled Properties of Sub-Micron Thin SnS Films

Synthesis and Physical Behaviour of In2S3 Films

Optoelectronic Properties of In2S3 Thin Films Measured Using Surface Photovoltage Spectroscopy

Optical behaviour of sprayed tin sulphide thin films

Influence of post-annealing in sulfur atmosphere on thermally evaporated β-In2S3 films

Indium sulfide based metal-semiconductor-metal ultraviolet-visible photodetector

Optical Properties of In2o3 Films Prepared by Spray Pyrolysis

(In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3 </sub> Photodetectors Fabricated on Sapphire at Different Temperatures by PLD