Black phosphorus: A new bandgap tuning knob

Rafael Roldán,Andres Castellanos-Gomez

DOI: https://doi.org/10.48550/arXiv.1711.05770

2017-11-15

Mesoscale and Nanoscale Physics

Abstract:Modern electronics rely on devices whose functionality can be adjusted by the end-user with an external 'knob'. A new tuning knob to modify the band gap of black phosphorus has been experimentally demonstrated.

What problem does this paper attempt to address?

Tunable bandgap in few-layer black phosphorus by electrical field

Dong Li,Jin-Rong Xu,Kun Ba,Ningning Xuan,Mingyuan Chen,Zhengzong Sun,Yu-Zhong Zhang,Zengxing Zhang

DOI: https://doi.org/10.1088/2053-1583/aa7c98

IF: 6.861

2017-07-24

2D Materials

Abstract:Dynamically engineering bandgap in semiconductors may enable a flexible design and optimization of electronics and optoelectronics. Layered black phosphorus is a 2D semiconductor with a direct bandgap and promising device characteristics. Theoretical studies indicate that the bandgap in black phosphorus can be tuned by electrical field. Here, through designing a double-gated field-effect transistor device configuration, we experimentally demonstrate that the bandgap in few-layer black phosphorus can be dynamically continually tuned by perpendicular electrical field. With an electrical displacement field of 1 V nm−1, the detailed study indicates that the bandgap can reduce around 100 meV. The finding here should be helpful on the flexible design and optimization of black phosphorus electronics and optoelectronics, and may open up some other new possible applications.

materials science, multidisciplinary
Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap

Bingchen Deng,Vy Tran,Yujun Xie,Hao Jiang,Cheng Li,Qiushi Guo,Xiaomu Wang,He Tian,Steven J. Koester,Han Wang,Judy J. Cha,Qiangfei Xia,Li Yang,Fengnian Xia

DOI: https://doi.org/10.1038/ncomms14474

IF: 16.6

2017-01-01

Nature Communications

Abstract:Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can enable novel device applications and allow for the exploration of new physical phenomena. However, theoretical investigations and photoemission spectroscopy experiments performed on doped black phosphorus through potassium adsorption indicate that in its few-layer form, an exceedingly large electric field in the order of several volts per nanometer is required to effectively tune its bandgap, making the direct electrical control unfeasible. Here we demonstrate the tuning of bandgap in intrinsic black phosphorus using an electric field directly and reveal the unique thickness-dependent bandgap tuning properties, arising from the strong interlayer electronic-state coupling. Furthermore, leveraging a 10-nm-thick black phosphorus in which the field-induced potential difference across the film dominates over the interlayer coupling, we continuously tune its bandgap from 300 to below 50 milli-electron volts, using a moderate displacement field up to 1.1 volts per nanometer. Such dynamic tuning of bandgap may not only extend the operational wavelength range of tunable black phosphorus photonic devices, but also pave the way for the investigation of electrically tunable topological insulators and topological nodal semimetals.
Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus

Jimin Kim,Seung Su Baik,Sae Hee Ryu,Yeongsup Sohn,Soohyung Park,Byeong-Gyu Park,Jonathan Denlinger,Yeonjin Yi,Hyoung Joon Choi,Keun Su Kim

DOI: https://doi.org/10.1126/science.aaa6486

IF: 56.9

2015-08-14

Science

Abstract:Tuning the band gap of black phosphorus Most materials used in electronics are semiconductors. The sizable energy gap in their electronic structure makes it easy to turn the conduction of electricity on and off. Graphene naturally lacks this band gap unless it undergoes certain modifications. Kim et al. studied the electronic structure of black phosphorus—a related two-dimensional material. By sprinkling potassium atoms on top of single layers of black phosphorus, the material changed from being a semiconductor to having a gapless linear dispersion similar to that of graphene. Science , this issue p. 723

multidisciplinary sciences
Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus

Jimin Kim,Seung Su Baik,Sae Hee Ryu,Yeongsup Sohn,Soohyung Park,Byeong-Gyu Park,Jonathan Denlinger,Yeonjin Yi,Hyoung Joon Choi,Keun Su Kim

DOI: https://doi.org/10.1126/science.aaa6486

2015-08-23

Abstract:Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable bandgap in few-layer black phosphorus doped with potassium using an in-situ surface doping technique. Through band-structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulates the bandgap owing to the giant Stark effect and tunes the material from a moderate-gap semiconductor to a band-inverted semimetal. At the critical field of this band inversion, the material becomes a Dirac semimetal with anisotropic dispersion, linear in armchair and quadratic in zigzag directions. The tunable band structure of black phosphorus may allow great flexibility in design and optimization of electronic and optoelectronic devices.

Materials Science,Mesoscale and Nanoscale Physics
Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors

Zuocheng Zhang,Likai Li,Jason Horng,Nai Zhou Wang,Fangyuan Yang,Yijun Yu,Yu Zhang,Guorui Chen,Kenji Watanabe,Takashi Taniguchi,Xian Hui Chen,Feng Wang,Yuanbo Zhang

DOI: https://doi.org/10.48550/arXiv.1701.08041

2017-01-27

Materials Science

Abstract:Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for opto-electronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the charge transport in black phosphorus at room temperature; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs). The effect opens up opportunities for future development of electro-mechanical transducers based on black phosphorus, and we demonstrate strain gauges constructed from black phosphorus thin crystals.
Tunable bandgap of monolayer black phosphorus by using vertical electric field: A DFT study

Tao Wang,Yan Liu,Qing Guo,Bin Zhang,Kuang Sheng,Can Li,You Yin

DOI: https://doi.org/10.3938/jkps.66.1031

2015-01-01

Journal of the Korean Physical Society

Abstract:Using a ab initio plane-wave ultrasoft pseudopotential method based on the generalized gradient approximation (GGA), we investigate the bandgap tuning in monolayer black phosphorus by applying external electric fields perpendicular to the layers. The bandgap continuously decreases with increasing applied electric fields, eventually rendering them metallic. We use the giant Stark effect, which is essentially characterized by an interlayer spacing to explain the rate of change of the bandgap with the applied external field. The atomic distance and charges also contribute to the semiconductor-to-metal transition. Our investigations show the bandgap change for the fabrication of novel electronic and photonic devices.
Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Bo Zheng,Naichao Si,Guoxin Xie,Quan Wang

DOI: https://doi.org/10.1016/j.physleta.2016.12.046

IF: 2.707

2017-01-01

Physics Letters A

Abstract:Black phosphorus has recently appeared as a promising two-dimensional material for applications in high performance nanoelectronics. Its single- and few-atomic layer forms in field-effect transistors have attracted a lot of attention due to the tunable bandgap (0.3-2.0 eV), high carrier mobility (1000 cm(2) V-1 s(-1)) and decent on-off ratios (10(5)). Here, we demonstrate a suspended black phosphorus field effect transistor (BP-FET) and utilize Raman spectroscope to characterize the strain on the effects of Raman phonon. We find that red shifts appear in all the three vibrational modes (A(g)(i), B-2g and A(g)(2) in different degrees. Among them, 14 mode is most sensitive to the tensile strain. We further investigate the electronic properties with a Cascade semi-automatic probe station. The linear relationships in the output curves indicate the contacts between black phosphorus and electrodes are ohmic contacts. The transfer characteristic curves declare the drain current modulation is similar to 7.6 x 10(3) for the hole conduction and similar to 57 for the electron conduction. Mobility of this device is found to be 347.5 cm(2) V-1 s(-1) and 4.9 cm(2) V-1 s(-1) for the hole and electron conduction, respectively. These results provide a theoretical basis for the coordination of high-performance black phosphorus electronic components. (C) 2016 Elsevier B.V. All rights reserved.
Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

Shi-Li Yan,Zhi-Jian Xie,Jian-Hao Chen,Takashi Taniguchi,Kenji Watanabe

DOI: https://doi.org/10.1088/0256-307X/34/4/047304

2017-03-24

Abstract:The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus (BP) by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10V/nm to 0.83V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronics, thermoelectric power generation and thermal imaging.

Mesoscale and Nanoscale Physics
Microscopic mechanism of the tunable band gap in potassium-doped few-layer black phosphorus

Sun-Woo Kim,Hyun Jung,Hyun-Jung Kim,Jin-Ho Choi,Su-Huai Wei,Jun-Hyung Cho

DOI: https://doi.org/10.1103/physrevb.96.075416

IF: 3.7

2017-08-14

Physical Review B

Abstract:Tuning band gaps in two-dimensional (2D) materials is of great interest for the fundamental and practical aspects of contemporary material sciences. Recently, black phosphorus (BP) consisting of stacked layers of phosphorene was experimentally observed to show a widely tunable band gap by means of the deposition of potassium (K) atoms on the surface, thereby allowing great flexibility in the design and optimization of electronic and optoelectronic devices. Here, based on density-functional theory calculations, we demonstrates that the donated electrons from K dopants are mostly localized in the topmost BP layer and this surface charging efficiently screens the K ion potential. It is found that, as the K doping increases, the extreme surface charging and its screening of K atoms shift the conduction bands down in energy, i.e., towards a higher binding energy, because they have more charge near the surface, while it has little influence on the valence bands having more charge in the deeper layers. This result provides a different explanation for the observed tunable band gap compared to the previously proposed giant Stark effect where a vertical electric field from the positively ionized K overlayer to the negatively charged BP layers shifts the conduction band minimum Γ1c (valence band minimum Γ8v) downwards (upwards). The present prediction of Γ1c and Γ8v as a function of the K doping reproduces well the widely tunable band gap, anisotropic Dirac semimetal state, and band-inverted semimetal state, as observed in an angle-resolved photoemission spectroscopy experiment. Our findings shed new light on a route for tunable band gap engineering of 2D materials through the surface doping of alkali metals.

physics, condensed matter, applied,materials science, multidisciplinary
Tunable intraband optical conductivity and polarization-dependent epsilon-near-zero behavior in black phosphorus

Souvik Biswas,William S. Whitney,Meir Y. Grajower,Kenji Watanabe,Takashi Taniguchi,Hans A. Bechtel,George R. Rossman,Harry A. Atwater

DOI: https://doi.org/10.1126/sciadv.abd4623

2020-09-02

Abstract:Black phosphorus (BP) offers considerable promise for infrared and visible photonics. Efficient tuning of the bandgap and higher subbands in BP by modulation of the Fermi level or application of vertical electric fields has been previously demonstrated, allowing electrical control of its above bandgap optical properties. Here, we report modulation of the optical conductivity below the band-gap (5-15 um) by tuning the charge density in a two-dimensional electron gas (2DEG) induced in BP, thereby modifying its free carrier dominated intraband response. With a moderate doping density of 7x10^12/cm2 we were able to observe a polarization dependent epsilon-near-zero behavior in the dielectric permittivity of BP. The intraband polarization sensitivity is intimately linked to the difference in effective fermionic masses along the two crystallographic directions, as confirmed by our measurements. Our results suggest the potential of multilayer BP to allow new optical functions for emerging photonics applications.

Optics,Applied Physics
Black Phosphorus Radio-Frequency Transistors

Han Wang,Xiaomu Wang,Fengnian Xia,Luhao Wang,Hao Jiang,Qiangfei Xia,Matthew L. Chin,Madan Dubey,Shu-jen Han

DOI: https://doi.org/10.1021/nl5029717

2014-10-15

Abstract:Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin film offers a moderate bandgap of around 0.3 eV and high carrier mobility, leading to transistors with decent on-off ratio and high on-state current density. Here, we demonstrate the gigahertz frequency operation of black phosphorus field-effect transistors for the first time. The BP transistors demonstrated here show excellent current saturation with an on-off ratio exceeding 2000. We achieved a current density in excess of 270 mA/mm and DC transconductance above 180 mS/mm for hole conduction. Using standard high frequency characterization techniques, we measured a short-circuit current-gain cut-off frequency fT of 12 GHz and a maximum oscillation frequency fmax of 20 GHz in 300 nm channel length devices. BP devices may offer advantages over graphene transistors for high frequency electronics in terms of voltage and power gain due to the good current saturation properties arising from their finite bandgap, thus enabling the future ubiquitous transistor technology that can operate in the multi-GHz frequency range and beyond.

Mesoscale and Nanoscale Physics
The Phosphorene Under The External Electronic Field And Strain

Tao Wang,Yan Liu,Wen Wen,Wei Guo,You Yin

DOI: https://doi.org/10.1142/S0129183117501315

2017-01-01

International Journal of Modern Physics C

Abstract:Using the ab initio plane-wave ultrasoft pseudopotential method based on the generalized gradient approximation (GGA), we investigate the bandgap tuning in monolayer phosphorene in terms of applying external electric fields perpendicular to the layers. The bandgap continuously decreases with the applied electric fields, eventually rendering them metallic. The phenomenon is explained by the giant stark effect. The interlayer P-P distance also result in the semiconductor-to-metal transition. The phosphorene exhibits the significant bandgap tuning ability under different strains with 5% variation. Our investigations show the bandgap change for the fabrication of novel electronic and photonic devices.
Actively variable-spectrum optoelectronics with black phosphorus

Hyungjin Kim,Shiekh Zia Uddin,Der-Hsien Lien,Matthew Yeh,Nima Sefidmooye Azar,Sivacarendran Balendhran,Taehun Kim,Niharika Gupta,Yoonsoo Rho,Costas P. Grigoropoulos,Kenneth B. Crozier,Ali Javey

DOI: https://doi.org/10.1038/s41586-021-03701-1

IF: 64.8

2021-08-11

Nature

Abstract:Room-temperature optoelectronic devices that operate at short-wavelength and mid-wavelength infrared ranges (one to eight micrometres) can be used for numerous applications1,2,3,4,5. To achieve the range of operating wavelengths needed for a given application, a combination of materials with different bandgaps (for example, superlattices or heterostructures)6,7 or variations in the composition of semiconductor alloys during growth8,9 are used. However, these materials are complex to fabricate, and the operating range is fixed after fabrication. Although wide-range, active and reversible tunability of the operating wavelengths in optoelectronic devices after fabrication is a highly desirable feature, no such platform has been yet developed. Here we demonstrate high-performance room-temperature infrared optoelectronics with actively variable spectra by presenting black phosphorus as an ideal candidate. Enabled by the highly strain-sensitive nature of its bandgap, which varies from 0.22 to 0.53 electronvolts, we show a continuous and reversible tuning of the operating wavelengths in light-emitting diodes and photodetectors composed of black phosphorus. Furthermore, we leverage this platform to demonstrate multiplexed nondispersive infrared gas sensing, whereby multiple gases (for example, carbon dioxide, methane and water vapour) are detected using a single light source. With its active spectral tunability while also retaining high performance, our work bridges a technological gap, presenting a potential way of meeting different requirements for emission and detection spectra in optoelectronic applications.

multidisciplinary sciences
Tuning Two-Dimensional Hyperbolic Plasmons in Black Phosphorus

Edo van Veen,Andrei Nemilentsau,Anshuman Kumar,Rafael Roldan,Mikhail I. Katsnelson,Tony Low,Shengjun Yuan

DOI: https://doi.org/10.1103/physrevapplied.12.014011

IF: 4.6

2019-01-01

Physical Review Applied

Abstract:Black phosphorus presents a very anisotropic crystal structure, making it a potential candidate for hyperbolic plasmonics, characterized by a permittivity tensor where one of the principal components is metallic and the other dielectric. Here we demonstrate that atomically thin black phosphorus can be engineered to be a hyperbolic material operating in a broad range of the electromagnetic spectrum from the entire visible spectrum to ultraviolet. With the introduction of an optical gain, a new hyperbolic region emerges in the infrared. The character of this hyperbolic plasmon depends on the interplay between gain and loss along the two crystalline directions.
Optoelectronic characteristics and application of black phosphorus and its analogs

Ying-Ying Li,Bo Gao,Ying Han,Bing-Kun Chen,Jia-Yu Huo

DOI: https://doi.org/10.48550/arXiv.2102.13316

2021-02-26

Abstract:The tunable bandgap from 0.3 eV to 2 eV of black phosphorus (BP) makes it to fill the gap in graphene. When studying the properties of BP more comprehensive, scientists have discovered that many two-dimensional materials, such as tellurene, antimonene, bismuthene, indium selenide and tin sulfide, have similar structures and properties to black phosphorus thus called black phosphorus analogs. In this review, we briefly introduce preparation methods of black phosphorus and its analogs, with emphasis on the method of mechanical exfoliation (ME), liquid phase exfoliation (LPE) and chemical vapor deposition (CVD). And their characterization and properties according to their classification of single-element materials and multi-element materials are described. We focus on the performance of passively mode-locked fiber lasers using BP and its analogs as saturable absorbers (SA) and demonstrated this part through classification of working wavelength. Finally, we introduce the application of BP and its analogs, and discuss their future research prospects.

Optics,Materials Science
Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus

Vy Tran,Ryan Soklaski,Yufeng Liang,Li Yang

DOI: https://doi.org/10.1103/PhysRevB.89.235319

2014-04-16

Abstract:We report the quasiparticle band gap, excitons, and highly anisotropic optical responses of few-layer black phosphorous (phosphorene). It is shown that these new materials exhibit unique many-electron effects; the electronic structures are dispersive essentially along one dimension, leading to particularly enhanced self-energy corrections and excitonic effects. Additionally, within a wide energy range, including infrared light and part of visible light, few-layer black phosphorous absorbs light polarized along the structure's armchair direction and is transparent to light polarized along the zigzag direction, making them viable linear polarizers for applications. Finally, the number of phosphorene layers included in the stack controls the material's band gap, optical absorption spectrum, and anisotropic polarization energy-window across a wide range.

Mesoscale and Nanoscale Physics,Materials Science
Black Phosphorus as Tunable Van der Waals Quantum Wells with High Optical Quality.

Guowei Zhang,Shenyang Huang,Andrey Chaves,Hugen Yan

DOI: https://doi.org/10.1021/acsnano.3c00904

IF: 17.1

2023-01-01

ACS Nano

Abstract:Van der Waals quantum wells, naturally formed in two-dimensional layered materials with nanoscale thickness, possess many inherent advantages over conventional molecular beam epitaxy grown counterparts, and could bring up intriguing physics and applications. However, optical transitions originated from the series of quantized states in these emerging quantum wells are still elusive. Here, we show that multilayer black phosphorus appears to be an excellent candidate for van der Waals quantum wells with well-defined subbands and high optical quality. Using infrared absorption spectroscopy, we probe subband structures of multilayer black phosphorus with tens of atomic layers, revealing clear signatures for optical transitions with subband index as high as 10, far from what was attainable previously. Surprisingly, in addition to allowed transitions, an unexpected series of "forbidden" transitions is also evidently observed, which enables us to determine energy spacings separately for conduction and valence subbands. Furthermore, the linear tunability of subband spacings by temperature and strain is demonstrated. Our results are expected to facilitate potential applications for infrared optoelectronics based on tunable van der Waals quantum wells.
Tunable optical properties of multilayers black phosphorus thin films

Tony Low,A. S. Rodin,A. Carvalho,Yongjin Jiang,Han Wang,Fengnian Xia,A. H. Castro Neto

DOI: https://doi.org/10.48550/arXiv.1404.4030

2014-04-15

Materials Science

Abstract:Black phosphorus thin films might offer attractive alternatives to narrow gap compound semiconductors for optoelectronics across mid- to near-infrared frequencies. In this work, we calculate the optical conductivity tensor of multilayer black phosphorus thin films using the Kubo formula within an effective low-energy Hamiltonian. The optical absorption spectra of multilayer black phosphorus are shown to vary sensitively with thickness, doping, and light polarization. In conjunction with experimental spectra obtained from infrared absorption spectroscopy, we also discuss the role of interband coupling and disorder on the observed anisotropic absorption spectra.
Tunable bandgap of black phosphorus by arsenic substitution toward high-performance photodetector

Yang Wang,Cheng Chen,Ziming Tang,Huan Lu,Shuiyan Cao,Wei Zhang,Min Yi,Kai Zhang,Yanpeng Liu,Wanlin Guo

DOI: https://doi.org/10.1007/s40843-022-2347-9

2023-02-22

Science China Materials

Abstract:Multilayer black phosphorus (BP) has been widely used in many infrared applications due to its narrow bandgap below 3.7-μm wavelength range. Approaches that reduce the bandgap to less than 0.33 eV would extend the cutoff wavelength and are of paramount importance. Moreover, the poor air stability of BP severely limits its practical applications. However, none of the current methods ensure effective bandgap tuning while enhancing air stability of BP for long-term device operation. This paper solved both problems by substituting BP with congener arsenic (As) atoms. We achieved millimeter-sized As-substituted BP (b-As x P 1− x ) by optimizing the chemical vapor transport parameters, with As concentrations ( x ) varying as 0, 0.3, 0.4, 0.5, and 0.6. According to the scanning tunneling microscopy results, arsenic atoms are resolved to be randomly embedded in the phosphorus host lattice, while maintaining a well-ordered lattice arrangement. Therefore, the electrical bandgap of pristine BP is narrowed to ∼0.16 ± 0.02 eV for the b-As 0.6 P 0.4 sample, accompanied by the accumulated p-doping and red-shifting BP Raman feature. Furthermore, the device based on b-As 0.6 P 0.4 exhibits no signs of oxidation under ambient conditions (temperature ∼20°C; humidity ∼33%) for 48 h and shows a photoresponsivity of up to ∼882 mA W −1 , exceeding the values of ∼314 mA W −1 for pristine BP devices due to the strong doping without obvious lattice distortion. Our findings indicate that arsenic-substituted BP has potential application in developing ambient-stable photodetectors and optical modulators.

materials science, multidisciplinary
Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene - Escholarship

Yuanbo Zhang

2010-01-01

Abstract:The electronic bandgap is an intrinsic property of semiconductors and insulators that largely determines their transport and optical properties. As such, it has a central role in modern device physics and technology and governs the operation of semiconductor devices such as p-n junctions, transistors, photodiodes and lasers. A tunable bandgap would be highly desirable because it would allow great flexibility in design and optimization of such devices, in particular if it could be tuned by applying a variable external electric field. However, in conventional materials, the bandgap is fixed by their crystalline structure, preventing such bandgap control. Here we demonstrate the realization of a widely tunable electronic bandgap in electrically gated bilayer graphene. Using a dual-gate bilayer graphene field-effect transistor (FET) and infrared microspectroscopy, we demonstrate a gate-controlled, continuously tunable bandgap of up to 250 meV. Our technique avoids uncontrolled chemical doping and provides direct evidence of a widely tunable bandgap -- spanning a spectral range from zero to mid-infrared -- that has eluded previous attempts. Combined with the remarkable electrical transport properties of such systems, this electrostatic bandgap control suggests novel nanoelectronic and nanophotonic device applications based on graphene.

Black phosphorus: A new bandgap tuning knob

Tunable bandgap in few-layer black phosphorus by electrical field

Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap

Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus

Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus

Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors

Tunable bandgap of monolayer black phosphorus by using vertical electric field: A DFT study

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

Microscopic mechanism of the tunable band gap in potassium-doped few-layer black phosphorus

Tunable intraband optical conductivity and polarization-dependent epsilon-near-zero behavior in black phosphorus

Black Phosphorus Radio-Frequency Transistors

The Phosphorene Under The External Electronic Field And Strain

Actively variable-spectrum optoelectronics with black phosphorus

Tuning Two-Dimensional Hyperbolic Plasmons in Black Phosphorus

Optoelectronic characteristics and application of black phosphorus and its analogs

Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus

Black Phosphorus as Tunable Van der Waals Quantum Wells with High Optical Quality.

Tunable optical properties of multilayers black phosphorus thin films

Tunable bandgap of black phosphorus by arsenic substitution toward high-performance photodetector

Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene - Escholarship