Abstract:Hexagonal‐ and tetragonal‐2H─PtSe2 single‐crystal flakes are controllably grown. It is found that the higher growth temperature would facilitate the nucleation of PtSe2 with a‐axis orientation, while c‐axis PtSe2 is preferred at lower temperatures. The single‐crystal flakes are systematically studied by HRTEM, in situ high‐pressure Raman, and polarization Raman. The electrical properties investigations demonstrate structure‐correlated electronic and magnetic transport mechanisms. Due to the narrow bandgap, environment stability, and Pt vacancy‐induced magnetism, PtSe2 has been considered a promising candidate for future broadband photodetection and electronics. However, the growth of single‐crystal PtSe2 is still a challenge. Herein, the synthesis of hexagonal and tetragonal 2H─PtSe2 single‐crystal flakes by precisely tailoring the growth temperature is reported. Through atomic structure analysis, hexagonal and tetragonal flakes are proven c‐axis and a‐axis orientations of 2H─PtSe2, indicating the preferred nucleation orientations are along the basal plane and vertically basal plane, respectively. The crystalline orientation‐dependent properties are studied including high‐pressure and polarized in situ‐Raman, electrical transport. The out‐of‐basal plane vibration (A1g) is sensitive to pressure showing 2.744 and 3.282 cm−1 GPa−1 corresponding to c‐2H─PtSe2 and a‐2H─PtSe2, respectively. The conductivity of c‐2H─PtSe2 is 57 times higher than that of a‐2H─PtSe2. Furthermore, by studying magnetic transport at low temperatures, both c‐2H─PtSe2 and a‐2H─PtSe2 exhibit butterfly‐shaped magnetoresistance hysteresis suggesting their ferromagnetic property. The c‐2H─PtSe2 has a higher |MR| ratio and higher coercive field compared with a‐2H─PtSe2, indicating that across multilayer carrier regulation for c‐2H─PtSe2 is more difficult than intra‐layer carrier regulation for a‐2H─PtSe2. This study opens the way to grow different crystalline orientations of 2D materials and will bring more abundant properties.

Raman spectroscopy of monolayer to bulk PtSe 2 exfoliated crystals

Raman spectroscopy of monolayer to bulk PtSe2 exfoliated crystals

Scalable Metal–Organic Chemical Vapor Deposition of High Quality PtSe2

Metal-Organic Chemical Vapor Deposition of PtSe2

Isolation and characterisation of monolayer phosphorene analogues

Epitaxial Synthesis of Monolayer PtSe2 Single Crystal on MoSe2 with Strong Interlayer Coupling

Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide

Temperature-dependent Raman Spectroscopy Studies of the Interface Coupling Effect of Monolayer ReSe2 Single Crystals on Au Foils

Optical Properties of Thickness-Controlled PtSe2 Thin Films Studied Via Spectroscopic Ellipsometry.

Precise Layer‐Dependent Electronic Structure of MBE‐Grown PtSe2

High Quality Atomically Thin PtSe2 Films Grown by Molecular Beam Epitaxy

Study of crystal-field splitting in ultrathin CePt$_5$ layers by Raman spectroscopy

Phonon dynamics and thermal conductivity of PtSe2 thin films: Impact of crystallinity and film thickness on heat dissipation

Monolayer Ptse2, A New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt

Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides

Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe2

Low wavenumber Raman spectroscopy of highly crystalline MoSe2 grown by chemical vapor deposition

Crystalline Orientation‐Tunable Growth of Hexagonal and Tetragonal 2H─PtSe2 Single‐Crystal Flakes

Edge conductivity in PtSe$_2$ nanostructures

Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe 2