Abstract:Two dimensional ferroelectric materials are interesting for both fundamental properties and potential applications. Especially, Group IV monochalcogenides possess highest thermoelectric performance and intrinsic ferroelectric polarization properties and can sever as a model to explore ferroelectric polarization properties. However, due to the relatively large exfoliation energy, the creation of high-quality and large-size monolayer group IV monochalcogenides is not easy, which seriously hinders the integration of these materials into the fast-developing field of 2D materials and their heterostructures. Herein, monolayer GeS was successfully fabricated on Cu(111) substrate by molecular beam epitaxy method, and the lattice and electronic band structures of monolayer GeS were systematically characterized by high-resolution scanning tunneling microscopy, low-energy electron diffraction, in situ X-ray photoelectron spectroscopy, Raman spectra and angle-resolved photoelectron spectroscopy, and density functional theory calculations. All atomically resolved STM images reveal that the obtained monolayer GeS has an orthogonal lattice structure, which is consisted with theoretical prediction. Meanwhile, the distinct Moiré pattern formed between monolayer GeS and Cu(111) substrate also confirm the orthogonal lattice structure. In order to examine the chemical composition and valence state of as-prepared monolayer GeS, in situ XPS was utilized without air exposure. The measured XPS core levels spectra suggest the valence states of Ge and S elements are identified to be +2 and -2, respectively and the atomic ratio of Ge/S is 1:1.5, which is extremely close to the stoichiometry ratio of 1:1 for GeS. To further corroborate the quality and lattice structure of the monolayer GeS film, ex-situ Raman measurements are also performed for monolayer GeS on HOPG and multilayer graphene substrate. Three well-defined typical characteristic Raman peaks of GeS are observed. Finally, in situ ARPES measurement are conducted to determine the electronic band structure of monolayer GeS on Cu(111). The results demonstrate that the monolayer GeS has a nearly flat band electronic band structure, consistent with our DFT theoretical calculation. The realization and investigation of the monolayer GeS extend the scope of 2D ferroelectric materials and makes it possible to prepare high quality and large size monolayer group IV monochalcogenides, which is beneficial for the application of this main group material to the rapidly developing two-dimensional ferroelectric materials and heterojunction research.

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