Abstract:Two-dimensional (2D) post-transition metal chalcogenides (PTMC) have attracted attention due to their suitable band gaps and lower exciton binding energies, making them more appropriate for electronic, optical and water-splitting devices than graphene and monolayer transition metal dichalcogenides (TMDs). Of the predicted 2D PTMCs, GaSe has been reliably synthesized and experimentally characterized. Despite this fact, quantities such as lattice parameters and band character vary significantly depending on which density functional theory (DFT) functional is used. Although many-body perturbation theory (GW approximation) has been used to correct the electronic structure and obtain the excited state properties of 2D GaSe, and solving the Bethe-Salpeter equation (BSE) has been used to find the optical gap, we find that the results depend strongly on the starting wavefunction. In attempt to correct these discrepancies, we employed the many-body Diffusion Monte Carlo (DMC) method to calculate the ground and excited state properties of GaSe because DMC has a weaker dependence on the trial wavefunction. We benchmark these results with available experimental data, DFT [local-density approximation, Perdew-Burke-Ernzerhof (PBE), strongly constrained and appropriately normed (SCAN) meta-GGA, and hybrid (HSE06) functionals] and GW-BSE (using PBE and SCAN wavefunctions) results. Our findings confirm monolayer GaSe is an indirect gap semiconductor (Gamma-M) with a quasiparticle electronic gap in close agreement with experiment and low exciton binding energy. We also benchmark the optimal lattice parameter, cohesive energy and ground state charge density with DMC and various DFT methods. We aim to present a terminal theoretical benchmark for pristine monolayer GaSe, which will aide in the further study of 2D PTMCs using DMC methods.

First-principles Study on the Electronic, Optical, and Transport Properties of Monolayer Α - and Β -Gese

Electronic, transport and optical properties of monolayer $α$ and $β-$GeSe: A first-principles study

High-Pressure Synthesis and Characterization of $β$-GeSe - A Semiconductor with Six-Rings in an Uncommon Boat Conformation

Tunable Ferroelectricity and Anisotropic Electric Transport in Monolayer Β-Gese

Two-Dimensional Gese As an Isostructural and Isoelectronic Analogue of Phosphorene: Sonication-Assisted Synthesis, Chemical Stability, and Optical Properties

High-Pressure Synthesis and Characterization of β-GeSe-A Six-Membered-Ring Semiconductor in an Uncommon Boat Conformation.

Isolation and characterisation of monolayer phosphorene analogues

First-Principles Study of the Phonon Lifetime and Low Lattice Thermal Conductivity of Monolayer γ-GeSe: A Comparative Study

Near-Field Radiative Heat Transfer between Layered β-GeSe Slabs: First-Principles Approach

A first-principles prediction of the structural, electronic, transport and photocatalytic properties of GaGeX3 (X = S, Se, Te) monolayers

Direct Band Gaps in Group IV-VI Monolayer Materials: Binary Counterparts of Phosphorene

Versatile van der Waals Heterostructures of Gamma-GeSe with h-BN/Graphene/MoS2

First-principles Study of Electronic, Optical and Thermal Transport Properties of Group III–VI Monolayer MX (M = Ga, In; X = S, Se)

First-Principles Calculations of Angular and Strain Dependence on Effective Masses of Two-Dimensional Phosphorene Analogues (Monolayer α-Phase Group-IV Monochalcogenides MX)

Highly modulated dual semimetal and semiconducting γ-GeSe with strain engineering

High-performance Thermoelectric Monolayer γ-GeSe and its Group-IV Monochalcogenide Isostructural Family

Versatile van der Waals heterostructures of γ-GeSe with h-BN/graphene/MoS2

Quantum-to-classical modeling of monolayer Ge2Se2 and its application in photovoltaic devices

Anisotropic interfacial properties of monolayer GeSe—metal contacts

A first-principles Quantum Monte Carlo study of two-dimensional (2D) GaSe

Electrical transport properties driven by unique bonding configuration in gamma-GeSe