Abstract:Organic synaptic transistors are a promising technology for advanced electronic devices with simultaneous computing and memory functions and for the application of artificial neural networks. In this study, the neuromorphic electrical characteristics of organic synaptic electrolyte-gated transistors are correlated with the microstructural and interfacial properties of the active layers. This is accomplished by utilizing a semiconducting/insulating polyblend-based pseudobilayer with embedded source and drain electrodes, referred to as PB-ESD architecture. Three variations of poly(3-hexylthiophene) (P3HT)/poly(methyl methacrylate) (PMMA) PB-ESD-based organic synaptic transistors are fabricated, each exhibiting distinct microstructures and electrical characteristics, thus serving excellent samples for exploring the critical factors influencing neuro-electrical properties. Poor microstructures of P3HT within the active layer and a flat active layer/ion-gel interface correspond to typical neuromorphic behaviors such as potentiated excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and short-term potentiation (STP). Conversely, superior microstructures of P3HT and a rough active layer/ion-gel interface correspond to significantly higher channel conductance and enhanced EPSC and PPF characteristics as well as long-term potentiation behavior. Such devices were further applied to the simulation of neural networks, which produced a good recognition accuracy. However, excessive PMMA penetration into the P3HT conducting channel leads to features of a depressed EPSC and paired-pulse depression, which are uncommon in organic synaptic transistors. The inclusion of a second gate electrode enables the as-prepared organic synaptic transistors to function as two-input synaptic logic gates, performing various logical operations and effectively mimicking neural modulation functions. Microstructure and interface engineering is an effective method to modulate the neuromorphic behavior of organic synaptic transistors and advance the development of bionic artificial neural networks.

Role of Trapping in Non‐Volatility of Electrochemical Neuromorphic Organic Devices

An Evolvable Organic Electrochemical Transistor for Neuromorphic Applications

Synaptic Characteristics and Neuromorphic Computing Enabled by Oxygen Vacancy Migration Based on Porous In 2 O 3 Electrolyte-Gated Transistors

Synaptic Characteristics and Neuromorphic Computing Enabled by Oxygen Vacancy Migration Based on Porous In2O3 Electrolyte-Gated Transistors

Non-ideal nernstian behavior in organic electrochemical transistors: fundamental processes and theory

Neuromorphic Simulation of Proton Conductors Laterally Coupled Oxide-Based Transistors with Multiple In-Plane Gates

Reminding Forgetful Organic Neuromorphic Device Networks

Dynamic Model of the Short-Term Synaptic Behaviors of PEDOT-based Organic Electrochemical Transistors with Modified Shockley Equations

Mimicking associative learning using an ion-trapping non-volatile synaptic organic electrochemical transistor

Neural Ordinary Differential Equations for Predicting the Temporal Dynamics of a ZnO Solid Electrolyte FETâ€

Design of 3-D Interface in Synaptic Transistors With Attojoule Power by Electrospinning Aligned Nanofibers for Neuromorphic Computing

Dual-liquid-gated electrochemical transistor and its neuromorphic behaviors

Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics

Analog Synapses Based on Nonvolatile FETs with Amorphous ZrO2 Dielectric for Spiking Neural Network Applications

Realizing Linear Synaptic Plasticity in Electric Double Layer-Gated Transistors for Improved Predictive Accuracy and Efficiency in Neuromorphic Computing

Impact of inert electrode on the volatility and non-volatility switching behavior of SiO2-based conductive bridge random access memory devices

Analog Synapses Based on Nonvolatile FETs With Amorphous ZrO 2 Dielectric for Spiking Neural Network Applications

Electret/High-k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

Functional Model of a Nanoparticle Organic Memory Transistor for Use As a Spiking Synapse

Device Engineering of Dual Metal Gate-Based Artificial Synapse for Enhanced Plasticity Utilizing Al$_{\text{2}}$O$_{\text{3}}$-Based Ion Conducting Electrolyte

Modulating Neuromorphic Behavior of Organic Synaptic Electrolyte-Gated Transistors Through Microstructure Engineering and Potential Applications