Abstract:In recent years, the studies of neuromorphic devices has received extensive attention. It is becoming an important branch of the developments of artificial intelligence technology. At the same time, natural biomaterials have several priorities, such as biodegradability, good biocompatibility, non-toxicity, etc., and have important value in novel portable intelligent systems. The egg shell membrane (ESM) is a fiber scaffold composed of highly crosslinked collagen, glycoprotein and cysteine-rich eggshell membrane proteins. It has porous morphology, thermal stability, mechanical strength, etc. Therefore, these protein-based fiber membranes have several potential applications, including nanocatalysts, microbial fuel cells, adsorption of toxic dyes, etc. This study adopts ESM as electrolyte, exhibiting extremely high proton conductivity of ~6.4×10 -3 S/cm and extremely high electric-double-layer (EDL) capacitance of ~2.8μF/cm 2 at room temperature. Thus, it has extremely strong interfacial EDL electrostatic modulation ability. Then, indium tin oxide EDL transistor has been fabricated using a single step masking processing with magnetron sputtering. The device demonstrates typical n-type output curves and transfer curves, at low operation voltage. In addition, transfer curves have been scanned for two times. It is observed that the curves approach with each other quite good, indicating the good stabilities. The device exhibits excellent electrical performances thanks to the extremely strong proton gating effects, including ON/OFF ratio of ~2.5×10 6 , mobility of ~3.2 cm 2 /(vs), sub-threshold swing of ~213 mV/dec. With the unique interfacial EDL modulation activities of ESM, the transistor can mimic some important synaptic plasticity behaviors, including excitatory postsynaptic current, paired pulse facilitation. With the increased pre-synaptic spike amplitude, the EPSC value increases correspondingly. And with the increased pre-synaptic spike frequency, the EPSC grain increases correspondingly, indicating the potentials in high-pass synaptic filtering. By loading 64 potentiation spikes and 64 depression spikes, multi-level synaptic weight can be updated, demonstrating potentiation and depression activities. Again, with the same potentiation spikes and depression spikes, synaptic weight value curves approach with each quite well, indicating the good stabilities for the present ESM gated oxide neuromorphic transistor. Then, an artificial neural network is adopted to perform supervised learning with Modified National Institute of Standards and Technology (MNIST) database. For simulation, a two-layer multilayer perceptron (MLP) neural network with 400 input neurons, 100 hidden neurons and 10 output neurons was adopted. The best recognition accuracy is as high as 92.59%. The proposed ESM gated oxide neuromorphic transistors have certain potentials in low-cost biodegradable neuromorphic system.

Electrolyte-gated transistors with good retention for neuromorphic computing

Li‐Ion‐Based Electrolyte‐Gated Transistors with Short Write‐Read Delay for Neuromorphic Computing

Non‐Volatile Electrolyte‐Gated Transistors Based on Graphdiyne/MoS2 with Robust Stability for Low‐Power Neuromorphic Computing and Logic‐In‐Memory

Non‐Volatile Electrolyte‐Gated Transistors Based on Graphdiyne/MoS 2 with Robust Stability for Low‐Power Neuromorphic Computing and Logic‐In‐Memory

Oxide‐Based Electrolyte‐Gated Transistors for Spatiotemporal Information Processing

Synaptic Characteristics and Neuromorphic Computing Enabled by Oxygen Vacancy Migration Based on Porous In 2 O 3 Electrolyte-Gated Transistors

Emerging electrolyte-gated transistors for neuromorphic perception

Electret/High-<i>k</i> Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

Artificial Synapses Based on Organic Electrochemical Transistors with Self-Healing Dielectric Layers

Improvement of weight stability in Li-ion-based electrolyte-gated transistor synapse by silica protective process

Egg shell membrane based electrolyte gated oxide neuromorphic transistor

Dual-gate IGZO-based Neuromorphic Transistors with Stacked Al2O3/Chitosan Gate Dielectrics

Solid‐State Electrolyte Gate Transistor with Ion Doping for Biosignal Classification of Neuromorphic Computing

Electret/High-k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

Dual-liquid-gated electrochemical transistor and its neuromorphic behaviors

Biomimetic Neuromorphic Sensory System via Electrolyte Gated Transistors

Synaptic Transistor Arrays Based on PVA/Lignin Composite Electrolyte Films

Improved dynamic characteristics of oxide electrolyte-gated transistor for time-delayed reservoir computing

Ultralow-power optoelectronic synaptic transistors based on polyzwitterion dielectrics for in-sensor reservoir computing

Coplanar-Gate Synaptic Transistor Array With Organic Electrolyte Using Lithographic Process

Increasing the Stability of Electrolyte-gated Organic Synaptic Transistors for Neuromorphic Implants