Abstract:Neuromorphic computing systems have shown powerful capability in tasks, such as recognition, learning, classification and decision-making, which are both challenging and inefficient in using the traditional computation architecture. The key elements including synapses and neurons, and their feasible hardware implementation are essential for practical neuromorphic computing. However, most existing synaptic devices used to emulate functions of a single synapse and the synapse-based networks are more energy intensive and less sustainable than their biological counterparts. The dendritic functions such as integration of spatiotemporal signals and spike-frequency coding characteristics have not been well implemented in a single synaptic device and thus play an imperative role in future practical hardware-based spiking neural networks. Moreover, most emerging synaptic transistors are fabricated by nanofabrication processes without CMOS compatibility for further wafer-scale integration. Herein, we demonstrate a novel ionic-gated silicon nanowire synaptic field-effect transistor (IGNWFET) with low power consumption (<400 fJ per switching event) based on the standard CMOS process platform. For the first time, the dendritic integration and dual-synaptic dendritic computations (such as "Add" and "Subtraction") could be realized by processing frequency coded spikes using a single device. Meanwhile, multi-functional characteristics of artificial synapses including the short-term and long-term synaptic plasticity, paired pulse facilitation and high-pass filtering were also successfully demonstrated based on 40 nm wide IGNWFETs. The migration of ions in polymer electrolyte and trapping in high-k dielectric were also experimentally studied in-depth to understand the short-term plasticity and long-term plasticity. Combined with statistical uniformity across a 4-inch wafer, the comprehensive performance of IGNWFET demonstrates its potential application in future biologically emulated neuromorphic systems.

Improvement of weight stability in Li-ion-based electrolyte-gated transistor synapse by silica protective process

Li-doping-modulated gelatin electrolyte for biodegradable electric-double-layer synaptic transistors

Organic synaptic devices based on ionic gel with reduced leakage current

Electrolyte-gated transistors with good retention for neuromorphic computing

Electret/High-<i>k</i> Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

Li‐Ion‐Based Electrolyte‐Gated Transistors with Short Write‐Read Delay for Neuromorphic Computing

Electret/High-k Solution Dielectric for Low Voltage Synaptic Transistors With Near Linear and Ambipolar Weight Update

Coplanar-Gate Synaptic Transistor Array With Organic Electrolyte Using Lithographic Process

Controlled Migration of Lithium Cations by Diamine Bridges in Water‐Processable Polymer‐Based Solid‐State Electrolyte Memory Layers for Organic Synaptic Transistors

Oxide-Based Synaptic Transistors Gated by Sol-Gel Silica Electrolytes

Synaptic Transistor Arrays Based on PVA/Lignin Composite Electrolyte Films

Increasing the Stability of Electrolyte-gated Organic Synaptic Transistors for Neuromorphic Implants

Synaptic Characteristics and Neuromorphic Computing Enabled by Oxygen Vacancy Migration Based on Porous In 2 O 3 Electrolyte-Gated Transistors

Recent advances in solid electrolytes for synaptic transistors

Solution-Processed, Electrolyte-Gated In2O3 Flexible Synaptic Transistors for Brain-Inspired Neuromorphic Applications.

Solid-state electrolyte gated synaptic transistor based on SrFeO2.5 film channel

Plasticity tunable artificial synapses based on organic electrochemical transistors with aqueous electrolyte

Lithium titanate synaptic device imitating lithium-ion battery structure

Multi-terminal Ionic-Gated Low-Power Silicon Nanowire Synaptic Transistors with Dendritic Functions for Neuromorphic Systems.

Laterally Coupled Synaptic Transistors Gated by Proton Conducting Sodium Alginate Films

Long-Term Synaptic Plasticity Emulated in Modified Graphene Oxide Electrolyte Gated IZO-Based Thin-Film Transistors.