Phase Composition Manipulation and Twin Boundary Engineering Lead to Enhanced Thermoelectric Performance of Cu 2 SnS 3
Yiqing Wei,Zizhen Zhou,Pengfei Jiang,Sikang Zheng,Qihong Xiong,Bin Zhang,Guoyu Wang,Xu Lu,Guang Han,Xiaoyuan Zhou
DOI: https://doi.org/10.1021/acsaem.1c01483
IF: 6.4
2021-08-18
ACS Applied Energy Materials
Abstract:Cu2SnS3 (CTS), a typical ternary copper-based sulfide, is considered as a potential p-type thermoelectric (TE) material with the advantages of environmental friendliness and low cost, but its performance is limited by the high lattice thermal conductivity and electrical resistivity. Herein, we have successfully synthesized undoped and In-doped CTS nanoparticles with a pure tetragonal phase by the colloidal method. More interestingly, plenty of twin boundaries appear in all the samples sintered from the synthesized nanoparticles independent of composition. The twin boundaries can effectively reduce the lattice thermal conductivity, while the tetragonal phase is beneficial to meliorate the electrical performance of CTS. Consequently, the highest zT reaches 0.36 at 700 K for Cu2Sn0.85In0.15S3, which is enhanced by 17 times compared to that of the pristine CTS with mainly the monoclinic phase. The tunable phase and microstructure via the colloidal method provide useful guidance to promote the performance of eco-friendly TE sulfides.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaem.1c01483.Lattice thermal conductivity (κl) calculation; observed, calculated, and difference Rietveld refined XRD patterns for Cu2Sn1–xInxS3 (x = 0, 0.05, 0.1, 0.15, and 0.25) samples; SEM images under different magnifications of the Cu2Sn0.85In0.15S3-sintered sample; temperature dependence of electrical conductivity, Seebeck coefficient, PF of Cu2Sn0.85In0.15S3 ("brm" stands for before reversible measurement, "arm" stands for after reversible measurement); XRD patterns of Cu2Sn0.85In0.15S3; calculated band structures of In-doped t-CTS (Cu2Sn0.75In0.25S3); low-magnification TEM image, HRTEM image of Cu2SnS3; structural data (position, occupancies, Biso, and bond distances) of m-CTS, t-CTS, and c-CTS; and carrier concentration of Cu2Sn1–xInxS3 (x = 0, 0.05, 0.1, 0.15, and 0.25) samples (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,energy & fuels