Abstract:We studied native point defects in CaS by DFT+ Hubbard U method. The effect of the localization of the d orbitals of Ca pseudopotential has been included. The Hubbard U corrected d-orbital for Ca sites are playing a role assisting the charge transfer from p orbitals of S site to the Ca site, giving both localized electron and hole states within the band gap, with an energy interval of 1.2~1.4 eV. This corresponds to the localized excitonic levels below the conduction band edge for the optical absorption. The electronic properties and formation energies of native point defects have been discussed. We found the neutral S vacancy has the lowest energy of 0.62 eV under Ca-rich limit. The Schottky defect pair defect is another dominant defect with cost of 1.51 eV per defect site from S-rich to Ca-rich chemical potential limits. The defect formation energy further summarized that the doubly positive S vacancy and doubly negative Ca vacancy are both the most stable donor-type and acceptor-type defects respectively coexisting in CaS. We also summarized a narrow doping limit energy which has been determined as 1.33 eV constantly in CaS independent to different chemical potential limits. But such doping allowed range entirely shifts from valence band vicinity toward the conduction band edge from S-rich to Ca-rich limits. Under S-rich limit, the dopable range for EF shifting corresponds to Eu2+ doping experiments, the luminescence wavelength limit is predicted to be 659 nm (1.88 eV) remarkably close to the reported results 650 nm. This gives a solid theoretical reference for the lanthanide ions doping experiments in CaS. We conclude that the defect levels combined with formation energy is an accessible way to suggest the doping energy range and an assistant to explain the activation stage of photostimulated luminescence (PSL) mechanism in lanthanide ions doped crystal materials.

Residual optical absorption from native defects in CdSiP_2 crystals

Dynamics of bound exciton complexes in CdS nanobelts.

Tight-Binding Calculations Of The Optical Response Of Optimally P-Doped Si Nanocrystals: A Model For Localized Surface Plasmon Resonance

Optical Properties Oftlni2se2: Observation of Pseudogap Formation

Optical Transitions Inpbte∕cdtequantum Dots

Photosensitive defects in germanium doped silica glass

Ultrafast Nonlinear Absorption and Second Harmonic Generation in Cu0.33In1.30P2S6 van der Waals Layered Crystals

X-ray Study on the Defects Induced by Cd-doped InSb

Interfacial Effects on the Optical Properties of CdTe/CdS Quantum Dots

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication.

Intersubband Absorption In Cdse/Znxcdymg1-X-Yse Self-Assembled Quantum Dot Multilayers

Optimization of Two-Photon Absorption Enhancement in One-Dimensional Photonic Crystals with Defect States

Modulation of High-Intensity Optical Properties in CdS/CdSe/CdS Spherical Quantum Wells by CdSe Layer Thickness

Studies of the optical band positions, spin-Hamiltonian parameters and defect structure for Cr3+ in CdIn2S4 crystal

Observation of Two-Photon Absorption Enhancement at Double Defect Modes in One-Dimensional Photonic Crystals

Native point defects in HgCdTe infrared detector material: Identifying deep centers from first principles

Electrical and Optical Properties of Indium and Lead Co-Doped Cd0.9Zn0.1Te

Designing transparent conductors using forbidden optical transitions

Tailoring Broadband Nonlinear Optical Characteristics and Ultrafast Photocarrier Dynamics of Bi2O2S Nanosheets by Defect Engineering.

Optical gain and lasing from bulk cadmium sulfide nanocrystals through bandgap renormalization

Native point defects in CaS: A focus on doping limit for persistent luminescence