Impact of aluminium doping in magnesium-doped zinc oxide thin films by sputtering for photovoltaic applications

Mirza Mustafizur Rahman,Kazi Sajedur Rahman,Md. Rokonuzzaman,Bibi Zulaika Bhari,Norasikin Ahmad Ludin,Mohd Adib Ibrahim

DOI: https://doi.org/10.1007/s10853-024-09801-3

IF: 4.5

2024-05-29

Journal of Materials Science

Abstract:In this study, Mg-doped zinc oxide (MZO) thin films were deposited through radio frequency (RF) sputtering for different substrate temperatures ranging from room temperature (25 °C) to 350 °C. XRD analysis depicted that the higher substrate temperatures lead to increased crystallite size. From the UV–Vis spectroscopy, transmittance (T) was found approximately 95% and the optical band energy gap (E g ) was determined around 3.70 eV. Hall effect measurement system measured the carrier concentration and resistivity of all films in the order of 10 14 cm −3 and 10 3 Ω-cm, respectively. Since the structural and optoelectrical properties of the MZO films were not significantly affected by the substrate temperatures, Aluminium (Al) was co-doped in the MZO film to improve structural and optoelectrical properties. As a result, the carrier concentration of Al doped MZO (AMZO) films was increased up to ~ 10 20 cm −3 from ~ 10 14 cm 3 (MZO), and the resistivity was decreased up to ~ 10 –1 Ω-cm from 10 3 Ω-cm (MZO) representing the significant changes in electrical properties without affecting the transmittance. This study opens a pathway for improving the MZO buffer layer that can enhance the cell performance of CdTe solar cells.

materials science, multidisciplinary

What problem does this paper attempt to address?

The paper primarily explores the impact of aluminum doping on the properties of magnesium-doped zinc oxide (MZO) thin films and evaluates the potential of these films in photovoltaic applications. Specifically, the study addresses the following key issues:

1. **Preparation and Characteristics of MZO Thin Films**: MZO thin films were deposited using radio frequency (RF) sputtering technology at different substrate temperatures (ranging from room temperature to 350°C). The structure, optical, and electrical properties of these films were studied.

2. **Effect of Aluminum Co-doping**: Given that the structural and optoelectronic properties of MZO thin films did not significantly improve with changes in substrate temperature, researchers further investigated the effect of aluminum (Al) co-doping on MZO thin films. The results showed that aluminum doping significantly enhanced the conductivity of MZO thin films, reduced resistivity, and maintained high transparency.

3. **Optimization of Film Properties**: By adjusting the aluminum doping concentration, the crystallinity, microstrain, dislocation density, and other physical properties of the films were optimized, thereby improving the electrical performance of the films. Notably, after aluminum doping, the carrier concentration of the films increased significantly to approximately 10^20/cm^3, compared to about 10^14/cm^3 when undoped; the resistivity also decreased substantially to about 10^-1 Ω·cm, much lower than the undoped level of 10^3 Ω·cm.

4. **Prospects for Photovoltaic Applications**: The study results indicate that aluminum-doped MZO thin films can significantly enhance the performance of CdTe solar cells when used as a buffer layer. This finding provides a new pathway for developing efficient, low-cost, and environmentally friendly solar cells.

In summary, the paper aims to improve the performance of MZO thin films through aluminum co-doping to enhance the overall efficiency of CdTe solar cells. The research not only demonstrates the positive impact of aluminum doping on the electrical properties of the films but also confirms the potential application value of this material in the photovoltaic field.