Abstract:Graphene has recently attracted a great deal of interest in both academia and industry because of its unique electronic and optical properties [1,2], as well as its chemical, thermal, and mechanical properties. The superb characteristics of graphene make this material one of the most promising candidates for various applications, such as ultrafast electronic circuits [1] and photodetectors [2], clean and renewable energy [3], and rapid single-molecule DNA sequencing [4,5]. The electronic properties of the graphene system rely heavily on the number of graphene layers [6] and effects on the coupling with the underlying substrate. Graphene can be produced by mechanical exfoliation of graphite, solution approaches [7,8], thermal decomposition of SiC [9,10], and chemical vapor deposition/segregation on catalytic metals [11-17]. Despite significant progress in graphene synthesis, production with fine control over the thickness of the film remains a considerable challenge. Here, we report on the synthesis of nearly 100% coverage of single-layer graphene on a Ni(111) surface with carbon atoms diffused from a highly orientated pyrolytic graphite (HOPG) substrate. Our results demonstrate how fine control of thickness and structure can be achieved by optimization of equilibrium processes of carbon diffusion from HOPG, segregation from Ni, and carbon diffusion at a Ni surface. Our method represents a significant step toward the scalable synthesis of graphene films with high structural qualities and finely controlled thicknesses and toward realizing the unique properties of graphene.

Growth of homogeneous single-layer graphene on Ni-Ge binary substrate

Direct growth of single-layer graphene on Ni surface manipulated by Si barrier

Characterization Of Graphene Grown On Bulk And Thin Film Nickel

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Growth of bilayer graphene on insulating substrates.

Bulk Growth of Mono- to Few-Layer Graphene on Nickel Particles by Chemical Vapor Deposition from Methane

A facile approach to direct growth of layer-tunable graphene on Ge substrate

Direct localized growth of graphene on substrate: a novel nickel-catalyzed CVD process assisted by H2 plasma

Tight-binding Calculation of Growth Mechanism of Graphene on Ni(111) Surface

Interfacial monolayer graphene growth on arbitrary substrate by nickel-assisted ion implantation

Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study

Segregation Growth of Graphene on Cu–Ni Alloy for Precise Layer Control

Direct growth of bilayer graphene on SiO₂ substrates by carbon diffusion through nickel.

Single-layer Graphene Nearly 100% Covering an Entire Substrate

Segregation Growth of Epitaxial Graphene Overlayers on Ni(111)

Direct Growth of Hbn/graphene Heterostructure Via Surface Deposition and Segregation for Independent Thickness Regulation.

Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate

Direct synthesis of single-crystal bilayer graphene on various dielectric substrates

Evolution of graphene growth on Cu and Ni studied by carbon isotope labeling

Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen Plasma

Surface Structures Of Single-Crystal Graphene On Cu/Ni(111) And Ge(110) Substrates Studied By Scanning Tunneling Microscopy