Hydrogen gas sensor based on NiO decorated macroporous silicon heterojunction

M'hammedi, K
DOI: https://doi.org/10.1007/s12034-024-03305-1
IF: 1.878
2024-08-25
Bulletin of Materials Science
Abstract:A highly sensitive hydrogen gas sensor operating at room temperature made of macroporous silicon (MPS) coated with a thin NiO film was developed. MPS layer was shaped by electrochemical anodization on an n-type Si surface. Thereafter, p-type NiO film was deposited onto the MPS surface by electrodeposition method. The morphology of the NiO/MPS sample was characterized by scanning electron microscopy. Al electrical contacts for further measurements were deposited onto the structure NiO/MPS by evaporation technique under vacuum. Gas sensing performances were measured to various H 2 concentrations ranging from 122 to 1342 ppm at room temperature. The results showed that the electrical behaviour of synthesized NiO/MPS sensor is similar to that of a diode, which can be used to detect H 2 gas at low concentrations, which reveals high sensitivity, fast response and recovery times working at room temperature. Graphical
materials science, multidisciplinary
What problem does this paper attempt to address?