Hydrogen Sensors Based on Ni/Sio2/Si Mos Capacitors

Chi Lu,Zhi Chen,Kozo Saito
DOI: https://doi.org/10.1016/j.snb.2006.06.029
2007-01-01
Abstract:A novel hydrogen sensor based on Ni/SiO2/Si MOS capacitors were fabricated and characterized at hydrogen concentrations ranging from 50 to 1000ppm at an operating temperature of 140°C. The highest response occurs at the same bias voltage (−0.4V) for all the concentration levels measured and is about 18% at 50ppm. The response/recovery transients of the Ni-based sensors are similar to those of the Pd-based hydrogen sensors. A Langmuir isotherm model is adapted to explain the observed phenomena, which is in agreement with our experimental results.
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