Abstract:Aging effects in digital circuits change the switching characteristics of their transistors, resulting in timing violations that can lead to functional errors at the system level. In particular, bias temperature instability (BTI) is a degradation effect that changes the threshold voltage of transistors. Its effect is more prevalent as the scaling of transistor dimensions progresses. In this work, we present a method to enable defect-centric long-term modeling of BTI degradation that takes into account the effects of concrete workloads at the processor data path level. Based on this study, we propose a novel design flow to link the impact of BTI degradation at the transistor ( ${Delta {}V_{text {th}}}$ ), processor data path (e.g., maximum frequency) and application-functionality levels. This flow may be used to improve system correctness over the entire device lifetime, avoiding unsafe working points, or to achieve a graceful degradation of system characteristics. Our design flow is applicable to all types of digital circuits, including high-performance processors. However, in this specific work we focus on the domain of biosignal processing applications for wireless body sensor networks (WBSNs), the pseudoperiodic nature of which interacts with the partially recoverable nature of BTI. Our results in this domain show, for a 32-nm implementation, a variation of up to 54.6 mV in the threshold voltage of the circuit transistors after one year of continuous operation, with an impact of 8.4% in the maximum safe operating frequency. Such effects are expected to strongly worsen for longer lifetimes and more scaled technology nodes.

Frequent Power-Up-and-Down-Induced Degradation of Device and Bandgap Voltage Reference in 14-nm FinFET Technology

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Bandgap Voltage Reference Design with Enhanced Tolerance of Process Variations

Investigation of the Off-State Degradation in Advanced FinFET Technology—Part II: Compact Aging Model and Impact on Circuits

A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology

Analysis of Functional Errors Produced by Long-Term Workload-Dependent BTI Degradation in Ultralow Power Processors

Low Power Aging-Aware On-Chip Memory Structure Design by Duty Cycle Balancing.

Temperature-Aware NBTI Modeling and the Impact of Standby Leakage Reduction Techniques on Circuit Performance Degradation

Negative-Bias Temperature Instability in Gate-All-Around Silicon Nanowire Mosfets: Characteristic Modeling and the Impact on Circuit Aging

Temperature-aware NBTI Modeling and the Impact of Input Vector Control on Performance Degradation

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Accelerated Aging in Analog and Digital Circuits with Feedback

Reliability Analysis of P-type SOI FinFETs with Multiple SiGe Channels on the Degradation of NBTI

Localized Thermal Effect Enhanced NBTI in Multifin Pfinfets under Low Drain Bias

New Insights into the Design for End-of-life Variability of NBTI in Scaled High-Κ/metal-gate Technology for the Nano-Reliability Era

New-Age : A Negative Bias Temperature Instability-Estimation Framework for Microarchitectural Components

Towards Reliability-Aware Circuit Design in Nanoscale FinFET Technology: — New-generation Aging Model and Circuit Reliability Simulator

Concurrent device/circuit aging for general reliability simulations

On the efficacy of input Vector Control to mitigate NBTI effects and leakage power

New Observations on AC NBTI Induced Dynamic Variability in Scaled High-Κ/metal-gate MOSFETs: Characterization, Origin of Frequency Dependence, and Impacts on Circuits