Abstract:A 28 GHz digitally controlled 6-bit phase shifter with a precision calibration technique in GaN high-electron mobility transistor (HEMT) technology is presented for Ka-band phased-array systems and applications. It comprises six stages, in which stages 1 and 2 for 5.625° and 11.25° are designed in the form of a switched-line circuit, and stages 3, 4, and 5 for 22.5°, 45°, and 90° are designed in the form of a switched-filter circuit. The final stage 6 for 180° is designed in a single-to-differential balun followed by a single-pole double-throw (SPDT) switch for achieving an efficient phase inversion. A novel continuous tuning calibration technique is proposed to improve the phase accuracy. It controls the gate bias voltage of off-state HEMTs at the stage 6 SPDT switch for fine calibration of the output phase. Fabricated in a 0.15 μm GaN HEMT process using a die size of 1.75 mm2, the circuit produces 64 phase states at 28 GHz with a 5.625° step. The experimental results show that the Root-Mean-Square (RMS) phase error is significantly improved from 8.56° before calibration to 1.08° after calibration. It is also found that the calibration does not induce significant changes for other performances such as the insertion loss, RMS amplitude error, and input-referred P1dB. This work successfully demonstrates that the GaN technology can be applied to millimeter-wave high-power phased-array transceiver systems.

What problem does this paper attempt to address?

The paper mainly addresses the following issues: 1. **Background and Need**: With the development of fifth-generation (5G) communication technology, the application of the millimeter-wave band (especially the Ka band) has become increasingly important. However, achieving high gain and the required directivity in this band requires the use of phased array systems to overcome path loss and attenuation issues. 2. **Specific Problem**: To realize a phased array transceiver system in the Ka band, a precise and high-resolution phase shifter monolithic microwave integrated circuit (MMIC) is needed. Currently, various semiconductor technologies (such as CMOS, GaAs, and GaN) have been used to develop digitally controlled phase shifter MMICs, but these phase shifters typically have phase errors ranging from 3° to 9°. 3. **Contribution of the Paper**: This paper proposes a novel continuous tuning calibration technique and applies it to a 28GHz GaN-based 6-bit digitally controlled phase shifter MMIC. This technique significantly improves phase accuracy and reduces phase error by finely adjusting the gate bias voltage of the non-operating high electron mobility transistor (HEMT) in the sixth-stage SPDT switch. 4. **Technical Details**: The paper designs a phase shifter circuit comprising six stages, each responsible for different phase shifts (from 5.625° to 180°). The first and second stages use switched line circuits, the third to fifth stages use switched filter circuits, and the sixth stage uses a Marchand balun and SPDT switch to achieve a 180° phase flip. Additionally, a novel continuous tuning calibration technique is introduced, which finely calibrates the output phase accuracy by adjusting the gate bias voltage of the non-operating HEMT in the sixth-stage SPDT switch. 5. **Experimental Results**: After calibration, the root mean square (RMS) phase error was reduced from 8.56° before calibration to 1.08°, indicating that the proposed GaN technology can be successfully applied to millimeter-wave high-power phased array transceiver systems. In summary, the paper mainly addresses the issue of achieving high-precision phase control in a 28GHz GaN-based 6-bit digitally controlled phase shifter MMIC and proposes an effective continuous tuning calibration technique to improve phase accuracy.

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