Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors

Baocai Fan,Yichen Liu,Chen Fu,Zhaojun Lin,Sean Li

DOI: https://doi.org/10.1063/5.0188217

IF: 1.697

2024-01-01

AIP Advances

Abstract:LaAlO3/SrTiO3 heterojunction field-effect transistors (HFETs) were fabricated. Using a combination of measured current–voltage (I–V) output curves and gate-source capacitance–voltage (C–V) characteristic curves for the fabricated LaAlO3/SrTiO3 HFETs, and considering scattering mechanisms for longitudinal optical phonon, interface rough, electron-electron (E-E), acoustic phonon, and polarized Coulomb field (PCF), the channel electron mobility of LaAlO3/SrTiO3 HFETs has been calculated and analyzed. The results showed that PCF scattering is a significant carrier scattering mechanism in LaAlO3/SrTiO3 HFETs. The heterostructure of the LaAlO3/SrTiO3 system has strong polarization characteristics. This paper is the first to demonstrate that PCF scattering is a significant carrier scattering mechanism in LaAlO3/SrTiO3 HFETs, following GaN HFETs, thus demonstrating that LaAlO3/SrTiO3 HFETs also have PCF scattering effect.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology

What problem does this paper attempt to address?

The paper primarily explores the impact of Polarized Coulomb Field scattering (PCF) on the channel electron mobility in LaAlO3/SrTiO3 heterojunction field-effect transistors (HFETs). The research team experimentally fabricated LaAlO3/SrTiO3 HFETs and utilized current-voltage (I-V) output curves and gate-source capacitance-voltage (C-V) characteristic curves to analyze different scattering mechanisms, including longitudinal optical phonon scattering, interface roughness scattering, electron-electron scattering, acoustic phonon scattering, and PCF scattering. Specifically, the study found that PCF scattering is an important carrier scattering mechanism in LaAlO3/SrTiO3 HFETs. Due to the significant polarization characteristics of the LaAlO3/SrTiO3 system, PCF scattering is particularly important for the channel electron transport properties. The research results indicate that under specific conditions, PCF scattering has a significant impact on electron mobility, especially under higher gate bias, where PCF scattering becomes one of the main scattering mechanisms. As the gate bias decreases, PCF scattering weakens, and its impact on electron mobility also diminishes. This study provides an important theoretical foundation and technical guidance for optimizing the performance of LaAlO3/SrTiO3 HFETs, contributing to further enhancing the application potential of such devices.

Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors

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