Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition
Kristjan Kalam,Markus Otsus,Jekaterina Kozlova,Aivar Tarre,Aarne Kasikov,Raul Rammula,Joosep Link,Raivo Stern,Guillermo Vinuesa,José Miguel Lendínez,Salvador Dueñas,Helena Castán,Aile Tamm,Kaupo Kukli
DOI: https://doi.org/10.3390/nano12152593
IF: 5.3
2022-07-28
Nanomaterials
Abstract:HfO2 and Fe2O3 thin films and laminated stacks were grown by atomic layer deposition at 350 °C from hafnium tetrachloride, ferrocene, and ozone. Nonlinear, saturating, and hysteretic magnetization was recorded in the films. Magnetization was expectedly dominated by increasing the content of Fe2O3. However, coercive force could also be enhanced by the choice of appropriate ratios of HfO2 and Fe2O3 in nanolaminated structures. Saturation magnetization was observed in the measurement temperature range of 5–350 K, decreasing towards higher temperatures and increasing with the films’ thicknesses and crystal growth. Coercive force tended to increase with a decrease in the thickness of crystallized layers. The films containing insulating HfO2 layers grown alternately with magnetic Fe2O3 exhibited abilities to both switch resistively and magnetize at room temperature. Resistive switching was unipolar in all the oxides mounted between Ti and TiN electrodes.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry