Abstract:Si quantum dots in SiO(2)/Si(3)N(4) hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si(3)N(4) layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si(3)N(4) barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si(3)N(4) barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.

Preparation of small silicon carbide quantum dots by wet chemical etching

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Colloidal Silicon Quantum Dots: From Preparation To The Modification Of Self-Assembled Monolayers (Sams) For Bio-Applications

Colloidal Silicon Quantum Dots: from Preparation to the Modification of Self-Assembled Monolayers for Bioimaging and Sensing Applications

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

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Experimental Study of the Influence of CH and H on the Conformation, Chemical Composition, and Luminescence of Silicon Quantum Dots Inlaid in Silicon Carbide Thin Films Grown by Remote Plasma-Enhanced Chemical Vapor Deposition.

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Preparation of Silicon-based Nanoscale β-SiC Quantum Dot Array

Self-organized Growth and Optical Emission of Silicon-Based Nanoscale Β-Sic Quantum Dots

Fabrication of ultra-small SiC nanoparticles with adjustable size, stoichiometry and photoluminescence by AC multi-arc plasmas

Optimization of Etching Processes for the Fabrication of Smooth Silicon Carbide Membranes for Applications in Quantum Technology

Fabrication of carbon quantum dots via ball milling and their application to bioimaging

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Preparation and application of Silica Quantum Dots using palygorskite as silicon source

Colloidal 2D Layered SiC Quantum Dots from a Liquid Precursor: Surface Passivation, Bright Photoluminescence, and Planar Self-Assembly

Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers