Anomalous layer-dependent electronic and piezoelectric properties of 2D GaInS 3 nanosheets

Weizhen Chen,Huabing Yin,Shujuan Jiang,Siyuan Liu,Chang Liu,Bing Wang,Guang-Ping Zheng
DOI: https://doi.org/10.1063/5.0050854
IF: 4
2021-05-24
Applied Physics Letters
Abstract:Two-dimensional (2D) GaInS<sub>3</sub> nanosheets are found to exhibit thermal and structural stabilities, good oxidation resistance, and tunable and layer-dependent electronic properties from first-principles calculations. Remarkably, the nanosheets with arbitrary thickness possess robust in-plane piezoelectricity without the odd-even effect commonly observed in other 2D piezoelectric materials, which is attributed to the retention of noncentrosymmetry resulting from their homogeneous and direct stacking patterns. The piezoelectric stress coefficient <span class="equationTd inline-formula"><math> e 11 3 D</math></span> of the nanosheets is about 0.23 C/m<sup>2</sup>, almost independent of the numbers of atomic layers of 2D GaInS<sub>3</sub>. The stability in piezoelectricity and the high carrier mobility of 2D GaInS<sub>3</sub> nanosheets could endow them with promising application prospects in nanoelectronic and nanoelectromechanical devices.
physics, applied
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