Abstract:This work introduces a stack layer of Lithium Phosphate (Li3PO4) /Titanium Dioxide (TiO2) as a new electron selective passivating contact for c‐Si solar cells. The stack achieves an impressive contact resistivity (ρc) of 0.128 mΩ cm2 on n‐type c‐Si substrates with resistivity ranging from 1 to 3 Ω cm2. Furthermore, it effectively reduces the surface recombination parameter (J0) to less than 4 fA by incorporating a 6 nm a‐Si:H(i) layer. Carrier selective contacts with passivation effects are considered to have a significant influence on the performance of crystalline silicon (c‐Si) solar cells. It is essential for electron selective contact materials to meet the requirements of ultra‐low contact resistance and excellent passivation effects. This work introduces a stack layer of Lithium Phosphate (Li3PO4) /Titanium Dioxide (TiO2) as a new electron selective passivating contact. It is found that the stack achieves an impressive contact resistivity (ρc) of 0.128 mΩ cm2 on n‐type c‐Si substrates with resistivity ranging from 1 to 3 Ω cm (14.6 mΩ cm2 for the n‐Si/a‐Si:H/Li3PO4/TiO2/Al contact). Furthermore, it effectively reduces the surface recombination parameter (J0) to less than 4 fA by incorporating a 6 nm a‐Si:H(i) layer. The characterization of the n‐Si/Li3PO4/TiO2 interface reveals that phosphorus diffusion into silicon plays a crucial role in achieving the ultra‐low contact resistivity, while the presence of PO43− groups helps in fixing hydrogen atoms to maintain the desired chemical passivation effect. Finally, a silicon heterojunction solar cell (SHJ) with a rear full‐area configuration of a‐Si:H/Li3PO4/TiO2/Al is successfully demonstrated achieving an impressive power conversion efficiency of 22.89%. The result proves the efficacy of employing hydrogen‐rich low‐work function metal oxide stacks as electron selective passivating contacts.

One‐Step Formation of Low Work‐Function, Transparent and Conductive MgFxOy Electron Extraction for Silicon Solar Cells

Inter-atomic diffusion of fluorine and oxygen forming electron-selective extraction for high-efficiency dopant-free silicon solar cells

Highly Efficient Silicon Heterojunction Solar Cells with ZnO:Al Transparent Electrode and Transition Metal Doped Indium Oxide Interfacial Layer

Modulation of the TCO/MoO x Front Contact Enables >21% High-Efficiency Dopant-Free Silicon Solar Cells

Self‐Diffusion Effect Assisted TiO2/Li3PO4 Electron Selective Passivating Contact in Silicon Solar Cells Approaching 23% Efficiency

Low Oxygen Content MoOx and SiOx Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

A High-Quality Dopant-Free Electron-Selective Passivating Contact Made from Ultra-Low Concentration Water Solution

< 50-μm thin crystalline silicon heterojunction solar cells with dopant-free carrier-selective contacts

Principles of dopant-free electron-selective contacts based on tunnel oxide/low work-function metal stacks and their applications in heterojunction solar cells

Bifacial silicon heterojunction solar cells using transparent‐conductive‐oxide‐ and dopant‐free electron‐selective contacts

Novel Mg- and Ga-doped ZnO/Li-Doped Graphene Oxide Transparent Electrode/Electron-Transporting Layer Combinations for High-Performance Thin-Film Solar Cells

High‐Performance and Stable Dopant‐Free Silicon Solar Cells with Magnesium Acetylacetonate Electron‐Selective Contacts

Interfacial engineering of ZnS passivating contacts for crystalline silicon solar cells achieving 20% efficiency

Highly Efficient and Highly Flexible Thin Crystalline Silicon Heterojunction Solar Cells Based on Dopant-Free Carrier-Selective Contacts Fabricated with Simple Processes

Simulation of Silicon Heterojunction Solar Cells for High Efficiency with Lithium Fluoride Electron Carrier Selective Layer

Efficient Silicon Solar Cells with Aluminum‐Doped Zinc Oxide‐Based Passivating Contact

Tunable work function of molybdenum oxynitride for electron-selective contact in crystalline silicon solar cells

ZnO‐doped In2O3 front transparent contact enables >24.0% silicon heterojunction solar cells

Highly transparent modulated surface textured front electrodes for high‐efficiency multijunction thin‐film silicon solar cells

50-Μm Thick Flexible Dopant-Free Interdigitated-Back-contact Silicon Heterojunction Solar Cells with Front MoOx Coatings for Efficient Antireflection and Passivation.

Electron‐Selective Strontium Oxide Contact for Crystalline Silicon Solar Cells with High Fill Factor