Abstract:A new method for the experimental study of ionization loss of relativistic negatively charged particles moving in a crystal in the channeling regime using a semiconductor surface-barrier detector with smoothly tunable thickness of the depleted layer is proposed. The thickness of the depleted layer in a flat semiconductor detector can be smoothly regulated by the value of the bias voltage applied to the detector. Therefore, the energy distribution of the ionization loss of relativistic particles which cross the detector and move in the channeling regime in the detector crystal can be measured along the path of the particles by varying the bias voltage of the detector and the dechanneling length can be found. Available literature data on experimental and theoretical researches of the dechanneling length are reviewed. The significant disagreement between the experimental and theoretical data is noted. Comparison of experimental data obtained by the detector-target with smoothly tunable thickness of the depleted layer with calculations can help to develop theoretical description of the dynamics of motion of negatively charged particles channeling in a crystal. A better understanding of the dechanneling length properties can be useful in the production of positrons and other particles such as neutrons by an electron beam in crystals, as well as in the development of crystalline undulators, and in the crystal-based extraction of electron beams from a synchrotron.

Reduction of multiple scattering of positively charged ultra relativistic particles channeling in planar fields of single crystals

Reduction of multiple scattering of high-energy positively charged particles during channeling in single crystals

Multiple scattering of positively charged particles moving near the (111) plane in a silicon single crystal

Scattering of high-energy positively charged particles in ultrashort oriented silicon crystal

Scattering by a Linear Array of Uniaxial Bianisotropic Chiral Cylinders

A study of small impact parameter ion channeling effects in thin crystals

All-atom relativistic molecular dynamics simulations of channeling and radiation processes in oriented crystals

Atomistic modelling of electron propagation and radiation emission in oriented bent ultra-thin Si and Ge crystals

Simulation of Deflection and Photon Emission of Ultra-Relativistic Electrons and Positrons in a Quasi-Mosaic Bent Silicon Crystal

Multiple scattering of 855 MeV electrons in amorphous and crystalline silicon: simulations versus experiment

Decanaling of high-energy particles from planar channels of crystal. Elastic and inelastic scattering processes

Angle-adjustable Density Field Formulation for the Modeling of Crystalline Microstructure

Multiple Bent Crystal Reflections for Efficient Beam Collimation in Frontier Colliders

Positron Channeling in Quasi-Mosaic Bent Crystals: Atomistic Simulations vs. Experiment

Electron channeling experiments with bent silicon single crystals -- a reanalysis based on a modified Fokker-Planck equation

Atomistic modeling of the channeling process with account for ionizing collisions: Preliminary results

Thomas Fermi Study on the Planar Channel Fields in Crystals

Channeling Radiation Fr Om High-energy Electrons and Positrons in Crystals

“Volume reflection” of high-energy charged particles in quasi-channeling states in bent crystals

Surface-barrier detector with smoothly tunable thickness of depleted layer for study of ionization loss and dechanneling length of negatively charged particles channeling in a crystal

Verification of crystal collimation model in experiment