Abstract:A comprehensive numerical investigation has been conducted on the angular distribution and spectrum of radiation emitted by 855 MeV electron and positron beams while traversing a 'quasi-mosaic' bent silicon (111) crystal. This interaction of charged particles with a bent crystal gives rise to various phenomena such as channeling, dechanneling, volume reflection, and volume capture. The crystal's geometry, emittance of the collimated particle beams, as well as their alignment with respect to the crystal, have been taken into account as they are essential for an accurate quantitative description of the processes. The simulations have been performed using a specialized relativistic molecular dynamics module implemented in the MBN Explorer package. The angular distribution of the particles after traversing the crystal has been calculated for beams of different emittances as well as for different anticlastic curvatures of the bent crystals. For the electron beam, the angular distributions of the deflected particles and the spectrum of radiation obtained in the simulations are compared with the experimental data collected at the Mainz Microtron facility. For the positron beam such calculations have been performed for the first time. We predict significant differences in the angular distributions and the radiation spectra for positrons versus electrons.

Thomas Fermi Study on the Planar Channel Fields in Crystals

A study of small impact parameter ion channeling effects in thin crystals

Electron channeling experiments with bent silicon single crystals -- a reanalysis based on a modified Fokker-Planck equation

Channeling Radiation Fr Om High-energy Electrons and Positrons in Crystals

Positron Channeling in Quasi-Mosaic Bent Crystals: Atomistic Simulations vs. Experiment

Electronic-Structure Theory of Crystalline Insulators under A Homogeneous Electric Field

Effect of electrical boundary conditions on the polarization distribution around a crack embedded in a ferroelectric single domain

Dynamical Chaos and Level Splitting under the Channeling of the High Energy Positrons in [100] Direction of the Silicon Crystal

Scattering of high-energy positively charged particles in ultrashort oriented silicon crystal

Reduction of multiple scattering of positively charged ultra relativistic particles channeling in planar fields of single crystals

Angle-adjustable Density Field Formulation for the Modeling of Crystalline Microstructure

Half-wavelength-crystal channeling of relativistic ions and its possible application for a beam deflection

Simulation of Deflection and Photon Emission of Ultra-Relativistic Electrons and Positrons in a Quasi-Mosaic Bent Silicon Crystal

Atomistic modeling of the channeling process with account for ionizing collisions: Preliminary results

Atomistic modelling of electron propagation and radiation emission in oriented bent ultra-thin Si and Ge crystals

Channeling and Radiation of 855 MeV Electrons and Positrons in Straight and Bent Tungsten (110) Crystals

Crystal channeling investigations at medical synchrotron regimes

Observation of Fine Structure in Channeling of Particles in Bent Crystals

Crystal Channelling in Accelerators

Channeling of particles and associated anomalous transport in a 2D complex plasma crystal