Multiple scattering of positively charged particles moving near the (111) plane in a silicon single crystal
W. Scandale,F. Cerutti,L. S. Esposito,M. Garattini,S. Gilardoni,R. Losito,A. Masi,D. Mirarchi,S. Redaelli,G. Smirnov,L. Bandiera,V. Guidi,A. Mazzolari,F. M. Addesa,F. Iacoangeli,F. Galluccio,A. G. Afonin,Yu. A. Chesnokov,A. A. Durum,V. A. Maisheev,Yu. E. Sandomirskiy,A. A. Yanovich,A. M. Taratin,Yu. A. Gavrikov,P. Yu. Ivanova,Yu. M. Ivanov,G. Hall,M. Pesaresi,R. Rossi
DOI: https://doi.org/10.1140/epjp/s13360-024-05851-3
2024-11-30
The European Physical Journal Plus
Abstract:The article is devoted to the study of the suppression of multiple scattering of positively charged particles with momenta of 180 GeV/c and 400 GeV/c passing through bent single crystals of silicon at small angles to the plane (111) both in channeling mode and in the above-barrier state. For the first time, the suppression of the effect of multiple scattering of non-channeling particles passing at a small angle to one of the planes of a silicon single crystal was observed. In addition, the asymmetry was observed in the multiple scattering of over-barrier particles with respect to their zero angle of entry into the single crystal.
physics, multidisciplinary