Strain-dependent local empirical pseudopotentials for lattice mismatched III-V semiconductors, their alloys, heterostructures and nanostructures

A. J. Williamson,J. Kim,L. W. Wang,S. -H. Wei,A. Zunger,A.J. Williamson,J.Kim,L.W. Wang,S.-H. Wei,A.Zunger

DOI: https://doi.org/10.48550/arXiv.cond-mat/9805051

1998-05-05

Materials Science

Abstract:For the latest EPM potentials, please see appendix A in Physical Review B, 59, 15270 (1999)

What problem does this paper attempt to address?

Electric fields and valence band offsets at strained [111] heterojunctions

S.Picozzi,A.Continenza,A. J. Freeman

DOI: https://doi.org/10.1103/PhysRevB.55.13080

1997-02-04

Abstract:[111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW) method. We have focused our attention on the potential line-up at the two sides of the homopolar isovalent heterojunctions considered, and in particular on its dependence on the strain conditions and on the strain induced electric fields. We propose a procedure to locate the interface plane where the band alignment could be evaluated; furthermore, we suggest that the polarization charges, due to piezoelectric effects, are approximately confined to a narrow region close to the interface and do not affect the potential discontinuity. We find that the interface contribution to the valence band offset is substantially unaffected by strain conditions, whereas the total band line-up is highly tunable, as a function of the strain conditions. Finally, we compare our results with those obtained for [001] heterojunctions.

Materials Science
Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb

Aslı Çakan,Cem Sevik,Ceyhun Bulutay

DOI: https://doi.org/10.1088/0022-3727/49/8/085104

2016-01-27

Abstract:The properties of a semiconductor are drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band structure and deformation potentials subject to various strains based on hybrid density functional theory. Guided by these first-principles results, we develop strain-compliant local pseudopotentials for use in the empirical pseudopotential method (EPM). We demonstrate that the newly proposed empirical pseudopotentials perform well close to band edges and under anisotropic crystal deformations. Using the EPM, we explore the heavy hole–light hole mixing characteristics under different stress directions, which may be useful in manipulating their transport properties and optical selection rules. The very low 5 Ry cutoff targeted in the generated pseudopotentials paves the way for large-scale EPM-based electronic structure computations involving these lattice mismatched constituents.
Ab initio calculation of band edges modified by (001) biaxial strain in group IIIA–VA and group IIB–VIA semiconductors: Application to quasiparticle energy levels of strained InAs/InP quantum dot

Eugene S. Kadantsev,Michal Zielinski,Marek Korkusinski,Pawel Hawrylak

DOI: https://doi.org/10.1063/1.3406144

IF: 2.877

2010-05-15

Journal of Applied Physics

Abstract:Results of first-principles full potential calculations of absolute position of valence and conduction energy bands as a function of (001) biaxial strain are reported for group IIIA–VA (InAs, GaAs, InP) and group IIB–VIA (CdTe, ZnTe) semiconductors. Our computational procedure is based on the Kohn–Sham form of density functional theory (KS DFT), local spin density approximation (LSDA), variational treatment of spin-orbital coupling, and augmented plane wave plus local orbitals method (APW+lo). The band energies are evaluated at lattice constants obtained from KS DFT total energy as well as from elastic free energy. The conduction band energies are corrected with a rigid shift to account for the LSDA band gap error. The dependence of band energies on strain is fitted to polynomial of third degree and results are available for parameterization of biaxial strain coupling in empirical tight-binding models of IIIA–VA and IIB–VIA self-assembled quantum dots (SAQDs). The strain effects on the quasiparticle energy levels of InAs/InP SAQD are illustrated with empirical atomistic tight-binding calculations.

physics, applied
Experimental Determination of Deformation Potentials and Band Nonparabolicity Parameters for PbSe

HZ Wu,N Dai,PJ McCann

DOI: https://doi.org/10.1103/physrevb.66.045303

2002-01-01

Abstract:Parabolic IV-VI multiple-quantum well structures were grown on BaF2(111) substrates by molecular beam epitaxy and characterized by differential Fourier transform infrared transmission spectroscopy. To reduce unwanted Fabry-Perot interference fringes, the top surface of the parabolic MQW samples was coated with an antireflection film enabling unambiguous observation of subband transitions without superimposed interference fringes. Up to six principle quantized electron and hole transitions were observed. In contrast to III-V quantum well systems, the "forbidden" Deltan=2 quantum transitions are not observed in the IV-VI parabolic wells. Compared with the strain effect, the quantum size effect dominates the splitting of the degeneracy of the normal and oblique valleys at the L-point in the Brillouin zone. Intervalley splitting energies and the spacings of the principle energy levels in the parabolic wells allowed determination of the deformation potential constants for PbSe, D-d=6.1 eV and D-u=-1.3 eV. From the fitting to the high-quantized energy levels observed in the differential transmission spectra, the nonparabolicity parameters for conduction and valence bands of PbSe are determined to be 1.9x10(-15) cm(2).
Accurate first-principle bandgap predictions in strain-engineered ternary III-V semiconductors

Badal Mondal,Marcel Kröner,Thilo Hepp,Kerstin Volz,Ralf Tonner-Zech

DOI: https://doi.org/10.1103/PhysRevB.108.035202

2023-06-27

Abstract:Tuning the bandgap in ternary III-V semiconductors via modification of the composition or the strain in the material is a major approach for the design of optoelectronic materials. Experimental approaches screening a large range of possible target structures are hampered by the tremendous effort to optimize the material synthesis for every target structure. We present an approach based on density functional theory efficiently capable of providing the bandgap as a function of composition and strain. Using a specific density functional designed for accurate bandgap computation (TB09) together with a band unfolding procedure and special quasirandom structures, we develop a computational protocol efficiently able to predict bandgaps. The approach's accuracy is validated by comparison to selected experimental data. We thus map the phase space of composition and strain (we call this the ``bandgap phase diagram'') for several important III-V compound semiconductors: GaAsP, GaAsN, GaPSb, GaAsSb, GaPBi, and GaAsBi. We show the application of these diagrams for identifying the most promising materials for device design. Furthermore, our computational protocol can easily be generalized to explore the vast chemical space of III-V materials with all other possible combinations of III- and V-elements.

Materials Science
Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles

Mengying Liu,Weijie Li,Dan Cheng,Xuan Fang,Hongbin Zhao,Dengkui Wang,Jinhua Li,Yingjiao Zhai,Jie Fan,Haizhu Wang,Xiaohua Wang,Dan Fang,Xiaohui Ma

DOI: https://doi.org/10.1039/d2ra02108k

IF: 4.036

2022-05-14

RSC Advances

Abstract:In this work, the electronic structure, and optical properties of As/Sb and Sb/Bi lateral heterostructures (LHS) along armchair and zigzag interfaces affected by strain were investigated by density functional theory. The LHSs presented strain-dependent band transformation characteristics and sensitivity features. And a reduction and transition of the bandgap was observed when the As/Sb and Sb/Bi LHS existed under compressive strain. The density of states and the conduction band minimum-valence band maximum characteristics exhibited corresponding changes under the strain. Then a spatial charge-separation phenomenon and strong optical absorption properties in the mid-infrared range can also be observed from calculated results. Theoretical research into As/Sb and Sb/Bi LHSs has laid a solid foundation for As/Sb and Sb/Bi LHS device manufacture.

chemistry, multidisciplinary
Permutations of the transverse momentum dependent effective valence-band potential for layered heterostructures. Pseudomorphic strain effects

L. Diago-Cisneros,J. J. Flores-Godoy,A. Mendoza-Álvarez,G. Fernández-Anaya

DOI: https://doi.org/10.48550/arXiv.1406.2677

2014-06-11

Abstract:The evolution of transverse-momentum-dependent effective band offset ($V_{\mathrm{eff}}$) profile for heavy (\emph{hh})- and light-holes (\emph{lh}), is detailed studied. Several new features in the metamorphosis of the standardized fixed-height $V_{\mathrm{eff}}$ profile for holes, in the presence of gradually increasing valence-band mixing and pseudomorphic strain, are presented. In some $III-V$ unstrained semiconducting layered heterostructures a fixed-height potential, is not longer valid for \emph{lh}. Indeed, we found ---as predicted for electrons---, permutations of the $V_{\mathrm{eff}}$ character for \emph{lh}, that resemble a "\emph{keyboard}", together with bandgap changes, whenever the valence-band mixing varies from low to large intensity. Strain is able to diminish the \emph{keyboard} effect on $V_{\mathrm{eff}}$, and also makes it emerge or vanish occasionally. We found that multiband-mixing effects and stress induced events, are competitors mechanisms that can not be universally neglected by assuming a fixed-height rectangular spatial distribution for fixed-character potential energy, as a reliable test-run input for heterostructures. Prior to the present report, neither direct transport-domain measurements, nor theoretical calculations addressed to these $V_{\mathrm{eff}}$ evolutions and permutations, has been reported for holes, as far as we know. Our results may be of relevance for promising heterostructure's design guided by valence-band structure modeling to enhance the hole mobility in $III-V$ materials.

Mesoscale and Nanoscale Physics
Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

H. T. Johnson,L. B. Freund,C. D. Akyüz,A. Zaslavsky

DOI: https://doi.org/10.1063/1.368549

IF: 2.877

1998-10-01

Journal of Applied Physics

Abstract:Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes.

physics, applied
Construction of 2D Lateral Pseudoheterostructures by Strain Engineering

Haifeng Feng,Jincheng Zhuang,Ashley D. Slattery,Liang Wang,Zhongfei Xu,Xun Xu,David Mitchell,Tian Zheng,Songlin Li,Michael Higgins,Long Ren,Ziqi Sun,Shi Xue Dou,Yi Du,Weichang Hao

DOI: https://doi.org/10.1088/2053-1583/aa7100

IF: 6.861

2017-01-01

2D Materials

Abstract:Two-dimensional (2D) lateral heterostructures host unconventional physical properties due to their controllable band-offset tuning and interfacial sensitive characteristic. The lattice mismatch results in the difficulties to construct the perfect atomic interface in such 2D lateral heterostructures, which in turn limits their desirable properties and performances in applications. In this work, strain-modulated 2D lateral pseudoheterogeneous structures are designed and realized in the single-component 2D BiOBr nanosheets by taking advantage of their strain-sensitive crystal and electronic structures. The pseudoheterogeneous interface without atomic mismatch can be feasibly modulated by local strain distribution, which exhibits similar local electronic band structure of corresponding heterostructures. Significant enhancement in charge separation at the pseudoheterostructure was demonstrated under visible light irradiation, which is given rise to the controllable electronic band alignment across the interface. The construction of the lateral pseudoheterostructure offers a feasible and promising way to build unprecedented 2D systems with exciting properties.
Electronic Properties of Mn-Compounds Under Strain

A. Debernardi,M.Peressi,A.Baldereschi

DOI: https://doi.org/10.48550/arXiv.cond-mat/0210235

2002-10-10

Abstract:We study the physical properties of MnAs under strain by using accurate first-principles pseudopotential calculations. Our results provide new insight on the physics of strained multilayer that are grown epitaxially on different lattice mismatched substrates and which are presently of interest for spintronic applications. We compute the strain dependence of the structural parameters, electronic bands, density of states and magnetization. In the region of strain/stress that is easily directly accessible to measurements, the effects on these physical quantities are linear. We also address the case of uniaxial stress inducing sizeable and strongly non linear effects on electronic and magnetic properties.

Materials Science
Atomistic Modeling of Strain Distribution in Self-Assembled Interfacial Misfit Dislocation (IMF) Arrays in Highly Mismatched III–V Semiconductor Materials

A. Jallipalli,G. Balakrishnan,S. H. Huang,A. Khoshakhlagh,L. R. Dawson,D. L. Huffaker

DOI: https://doi.org/10.1016/j.jcrysgro.2006.12.032

IF: 1.8

2007-01-01

Journal of Crystal Growth

Abstract:We describe a mathematical model to elucidate the strain energy distribution in the atomic arrangement resulting from a periodic pure edge, 90° interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductors. Using molecular mechanics methods, we calculate strain energy at the atomic level by considering the stretch and bend of each bond in the system under consideration. Three highly mismatched systems InAs/GaAs (Δao/ao ∼7.2%), GaSb/GaAs (Δao/ao ∼7.8%) and AlSb/Si (Δao/ao ∼13%) are considered. This model describes that IMF array formation is driven by strain energy minimization and demonstrates the periodicity of the misfit array that is in good agreement with experimental data using cross section high-resolution transmission electron micrograph (HR-TEM) images and also with other theoretical values.
Strain-engineering on mechanical and electronic properties of group IV-V two-dimensional semiconductors

Tianyu Wang,Kun Lu,Zhimi Li,Xin Li,Linling Dai,Jiuren Yin,Ping Zhang,Yanhuai Ding

DOI: https://doi.org/10.1088/2053-1591/ac0366

IF: 2.025

2021-10-01

Materials Research Express

Abstract:Due to the attractive physical properties, group IV-V materials (A3B, A = C, Si, Ge and B = N, P, As) have been received much attention in recent years. In this paper, first-principles calculations have been performed to investigate the elastic and electrical properties in two-dimensional (2D) A3B materials. The in-plane stiffness, Poisson's ratio, Young's modulus and ultimate strength of monolayer A3Bs along armchair and zigzag direction are calculated. The band gap of monolayer C3N can be modified significantly by the application of strain engineering. We predicted the electron and hole mobility in the armchair (zigzag) direction, rather high and highly anisotropic. Monolayer Ge3N exhibits an extremely high electron mobility of along the zigzag direction. The high mobility and anisotropic characteristics endow A3Bs with many potential applications in the field of microelectronics and optoelectronic devices.

materials science, multidisciplinary
Comparative study on the strain-dependent mechanical and electronic properties of Nb<sub>3</sub>Al and Nb<sub>3</sub>Sn

Zhao Liu,Biao Wang

DOI: https://doi.org/10.1088/2053-1591/ac1966

IF: 2.025

2021-01-01

Materials Research Express

Abstract:Nb3Al and Nb3Sn are important A15 compounds due to their good superconducting properties in high magnetic field. The strain coming from multiple sources would result in the degradation of superconducting performance for both of them. Extensive experimental studies have found that Nb3Sn has higher strain sensitivity than Nb3Al. However, most of the previous theoretical works focus on the effect of compressive hydrostatic pressure, which doesn't reflect the actual working condition. In this work, first-principles calculations were done to investigate the mechanical behaviors of the two materials under the three crystallographic uniaxial tensile loadings. Determined from the stress-strain relations, the theoretical strength of Nb3Al is found to be slightly higher than that of Nb3Sn, which is validated by the energy-strain curve and the corresponding phonon instability. Electronic analyses show that the property difference of the two materials is attributed to their different bonding states and strain sensitivities. The present work unveils why the superconductivity of Nb3Sn is more sensitive to strain than Nb3Al on the microscopic level.
Strain-induced Weyl and Dirac states and direct-indirect gap transitions in group-V materials

Glenn Moynihan,Stefano Sanvito,David D. O'Regan

DOI: https://doi.org/10.1088/2053-1583/aa89d2

2018-01-25

Abstract:We perform comprehensive density-functional theory calculations on strained two-dimensional phosphorus (P), arsenic (As) and antimony (Sb) in the monolayer, bilayer, and bulk $\alpha$-phase, from which we compute the key mechanical and electronic properties of these materials. Specifically, we compute their electronic band structures, band gaps, and charge-carrier effective masses, and identify the qualitative electronic and structural transitions that may occur. Moreover, we compute the elastic properties such as the Young's modulus $Y$; shear modulus $G$; bulk modulus $\mathcal{B}$; and Poisson ratio $\nu$ and present their isotropic averages of as well as their dependence on the in-plane orientation, for which the relevant expressions are derived. We predict strain-induced Dirac states in the monolayers of As and Sb and the bilayers of P, As, and Sb, as well as the possible existence of Weyl states in the bulk phases of P and As. These phases are predicted to support charge velocities up to $10^6$~$\textrm{ms}^{-1}$ and, in some highly anisotropic cases, permit one-dimensional ballistic conductivity in the puckered direction. We also predict numerous band gap transitions for moderate in-plane stresses. Our results contribute to the mounting evidence for the utility of these materials, made possible by their broad range in tuneable properties, and facilitate the directed exploration of their potential application in next-generation electronics.

Materials Science,Mesoscale and Nanoscale Physics,Computational Physics,Quantum Physics
Theory of local electric polarization and its relation to internal strain: impact on the polarization potential and electronic properties of group-III nitrides

Miguel A. Caro,Stefan Schulz,Eoin P. O'Reilly

DOI: https://doi.org/10.1103/PhysRevB.88.214103

2013-12-06

Abstract:We present a theory of local electric polarization in crystalline solids and apply it to study the case of wurtzite group-III nitrides. We show that a local value of the electric polarization, evaluated at the atomic sites, can be cast in terms of a summation over nearest-neighbor distances and Born effective charges. Within this model, the local polarization shows a direct relation to internal strain and can be expressed in terms of internal strain parameters. The predictions of the present theory show excellent agreement with a formal Berry phase calculation for random distortions of a test-case CuPt-like InGaN alloy and InGaN supercells with randomly placed cations. While the present level of theory is appropriate for highly ionic compounds, we show that a more complex model is needed for less ionic materials, in which the strain dependence of Born effective charges has to be taken into account. Moreover, we provide ab initio parameters for GaN, InN and AlN, including hybrid functional values for the piezoelectric coefficients and the spontaneous polarization, which we use to accurately implement the local theory expressions. In order to calculate the local polarization potential, we also present a point dipole method. This method overcomes several limitations related to discretization and resolution which arise when obtaining the local potential by solving Poisson's equation on an atomic grid. Finally, we perform tight-binding supercell calculations to assess the impact of the local polarization potential arising from alloy fluctuations on the electronic properties of InGaN alloys. In particular, we find that the large upward bowing with composition of the InGaN valence band edge is strongly influenced by local polarization effects. Furthermore, our analysis allows us to extract composition-dependent bowing parameters for the energy gap and valence and conduction band edges.

Materials Science
Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

Abdullah Gok,Xiaowei Wang,Shelley Scott,Abhishek Bhat,Hanfei Yan,Ajith Pattammattel,Evgeny Nazaretski,Yong S. Chu,Zicong Huang,Richard M. Osgood,Max G. Lagally,Roberto Paiella

DOI: https://doi.org/10.1021/acsanm.1c00966

IF: 6.14

2021-06-10

ACS Applied Nano Materials

Abstract:The ability to tailor the energy band lineup of semiconductor materials plays a key role in the development of many electronic and optoelectronic devices and normally relies on heteroepitaxy. Here, we report a different method, based on strain engineering, for the controlled introduction of variations in bandgap energy with lateral position in thin films. External stress is applied on Ge nanomembranes stacked with an array of amorphous-Si pillars in order to create a non-uniform strain (and therefore bandgap energy) distribution commensurate with the sample thickness variations. The resulting strain profiles are mapped using Bragg diffraction with a hard X-ray probe featuring nanoscale spatial resolution. Compared with traditional heterostructures grown by epitaxial techniques, these strain-engineered samples involve a single chemical composition and are not limited in the choice of compatible materials by any restriction imposed by lattice-matching requirements. Furthermore, their energy band lineups can be patterned in nearly arbitrary shapes using nanolithography to control the thickness profile and can be tuned actively by varying the applied stress. As a result, these structures are attractive for a wide range of device applications (including lasers, LEDs, solar cells, and thermoelectrics) that require complex heterostructure lineups with multiple bandgap energies.This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Tunable strain effects on the electronic structures and mobility properties of InP/InAs lateral heterostructure

Long Lin,Shaofei Li,Linwei Yao,Weiyang Yu,Xiaolin Cai,Liwei Zhang,Wei-Bing Zhang,Zhanying Zhang,Hualong Tao

DOI: https://doi.org/10.1088/1361-6463/abb555

2020-10-09

Abstract:Abstract Two-dimensional lateral heterostructures (LHSs) carry unconventional physical properties due to their excellent adjustable band-offset and sensitive interface characteristics. In this paper, we have designed two kinds of seamless LHSs with excellent stabilities, the zigzag-zigzag (Z-Z) InP/InAs LHS and the armchair-armchair (A-A) InP/InAs LHS, and the changes in lattice structures and electronic properties under different strains are studied systematically by employing first-principles calculations based on density functional theory. Our results indicate that the Z-Z and A-A InP/InAs LHSs are indirect-bandgap semiconductors with a moderate bandgap. Surprisingly, it is found that the carrier mobility of holes for the Z-Z InP/InAs LHS is as high as 6.954 × 10 3 cm 2 · V −1 · s −1 . The established Z-Z and A-A InP/InAs LHSs exhibit superior properties under uniaxial strains ( a -direction and b -direction) and biaxial strain ( ab -direction). It is found that the conduction bands of Z-Z and A-A InP/InAs LHSs occur with an intriguing downward (upward) transfer under compressive (tensile) strain along the b- and ab -directions, respectively. Moreover, when more than 2% of the tensile strain along the ab -direction is applied, the Z-Z and A-A InP/InAs LHS change from an indirect bandgap semiconductor to a direct bandgap semiconductor, and the Z-Z InAs/InP LHS changes into type-II heterostructure. Based on the calculated band structures, the effect of uniaxial strain on effective mass is anisotropic. Especially when tensile strain is applied, the effective mass of electrons in Z-Z and A-A InP/InAs LHSs will be reduced, which is consistent with the change in band structures under strain. The strain tunability of direct bandgap, type-II band alignment, and high carrier mobility mean Z-Z and A-A InP/InAs LHSs have potential applications in optoelectronic, photovoltaic, and flexible electronic devices.
Efficient band-structure calculations of strained quantum wells

Shun Lien Chuang

DOI: https://doi.org/10.1103/physrevb.43.9649

IF: 3.7

1991-04-15

Physical Review B

Abstract:The effective-mass equations using the Luttinger-Kohn Hamiltonian taking into account the strain effects are solved exactly by making a unitary transformation. Using this method, we need to solve two 2×2 matrices instead of the original 4×4 matrix. The eigenvalues and eigenvectors for the heavy hole and the light hole can be expressed analytically. When applied to heterojunctions such as quantum wells, the reduction in the number of unknowns makes the method a more efficient approach to the calculations of valence-band structures, which takes into account the valence-band mixing and the strain effects with proper boundary conditions. Detailed numerical results and significant features for strained GaxIn1-xAs grown on an In1-xGaxAsyP1-y lattice matched to InP are presented. For a Ga mole fraction x less than 0.468 (compression), the top subband is heavy-hole-like. For x greater than 0.468 (tension strain), the top band can be either a heavy-hole or a light-hole subband, depending on the well width and the shear deformation potential. Interesting subband structures, which show a negative effective mass in the top subband, are discussed.

physics, condensed matter, applied,materials science, multidisciplinary
The strain regulated physical properties of PbI2/g-C3N4 for potential optoelectronic device

Xiunan Chen,Yuhong Huang,Zun-Yi Deng,Haili Zhao,Fei Ma,Jian-Min Zhang,Xiumei Wei

DOI: https://doi.org/10.1088/1361-648x/ad33ef

2024-03-15

Journal of Physics Condensed Matter

Abstract:The van der Waals (vdW) heterostructures of Z-scheme PbI2/g-C3N4 with an indirect bandgap have gained much attention in recent years due to their unique properties and potential applications in various fields. However, the optoelectronic characteristics and strain-modulated effects are not yet fully understood. By considering this, six stacking models of PbI2/g-C3N4 are proposed and the stablest structure is selected for further investigation. The uniaxial and biaxial strains (-10% ~ 10%) regulated band arrangement, charge distribution, optical absorption in the framework of density functional theory (DFT) are systematically explored. The compressive uniaxial strain of -8.55% changes the band type from II→I, and the biaxial strains of -7.12%, -5.25%, 8.91% change the band type in a way of II→I→II→I, acting like the "band-pass filter". The uniaxial strains except -10% compressive strain, and the -6%, -4%, 2%, 4%, 10% biaxial strains will enchance the light absorption of PbI2/g-C3N4. The exerted strains on PbI2/g-C3N4 generate different power conversion efficiency (ηPCE) values ranging from 3.64% to 25.61%, and the maximum ηPCE is generated by -6% biaxial strain. The results of this study will pave the way for the development of new electronic and optoelectronic materials with customized properties in photocatalytic field and optoelectronic devices.

physics, condensed matter

Strain-dependent local empirical pseudopotentials for lattice mismatched III-V semiconductors, their alloys, heterostructures and nanostructures

Electric fields and valence band offsets at strained [111] heterojunctions

Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb

Ab initio calculation of band edges modified by (001) biaxial strain in group IIIA–VA and group IIB–VIA semiconductors: Application to quasiparticle energy levels of strained InAs/InP quantum dot

Experimental Determination of Deformation Potentials and Band Nonparabolicity Parameters for PbSe

Accurate first-principle bandgap predictions in strain-engineered ternary III-V semiconductors

Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles

Permutations of the transverse momentum dependent effective valence-band potential for layered heterostructures. Pseudomorphic strain effects

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Construction of 2D Lateral Pseudoheterostructures by Strain Engineering

Electronic Properties of Mn-Compounds Under Strain

Atomistic Modeling of Strain Distribution in Self-Assembled Interfacial Misfit Dislocation (IMF) Arrays in Highly Mismatched III–V Semiconductor Materials

Strain-engineering on mechanical and electronic properties of group IV-V two-dimensional semiconductors

Comparative study on the strain-dependent mechanical and electronic properties of Nb<sub>3</sub>Al and Nb<sub>3</sub>Sn

Strain-induced Weyl and Dirac states and direct-indirect gap transitions in group-V materials

Theory of local electric polarization and its relation to internal strain: impact on the polarization potential and electronic properties of group-III nitrides

Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

Tunable strain effects on the electronic structures and mobility properties of InP/InAs lateral heterostructure

Efficient band-structure calculations of strained quantum wells

The strain regulated physical properties of PbI2/g-C3N4 for potential optoelectronic device