Electronic Properties of Mn-Compounds Under Strain

A. Debernardi,M.Peressi,A.Baldereschi

DOI: https://doi.org/10.48550/arXiv.cond-mat/0210235

2002-10-10

Abstract:We study the physical properties of MnAs under strain by using accurate first-principles pseudopotential calculations. Our results provide new insight on the physics of strained multilayer that are grown epitaxially on different lattice mismatched substrates and which are presently of interest for spintronic applications. We compute the strain dependence of the structural parameters, electronic bands, density of states and magnetization. In the region of strain/stress that is easily directly accessible to measurements, the effects on these physical quantities are linear. We also address the case of uniaxial stress inducing sizeable and strongly non linear effects on electronic and magnetic properties.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the changes in the physical properties of MnAs (manganese arsenide) under different stress conditions, especially how its electronic structure and magnetic properties are affected by uniaxial stress. Specifically:

1. **Changes in structural parameters**: Study the changes in the lattice constant and other structural parameters of MnAs when uniaxial stress is applied.
2. **Changes in electronic structure**: Analyze the influence of uniaxial stress on the band structure and density of states (DOS) of MnAs.
3. **Changes in magnetic properties**: Explore the influence of uniaxial stress on the total magnetic moment ($M_{\text{tot}}$) and absolute magnetic moment ($M_{\text{abs}}$) of MnAs.

### Research background
MnAs is an important magnetic material and has potential application value in the field of spintronics. Due to the lattice mismatch between it and different substrates, MnAs may form strained structures during the growth process, and these strained structures will significantly affect its physical properties. Therefore, understanding the influence of stress on the physical properties of MnAs is crucial for designing and realizing new spintronic devices.

### Main findings
1. **Low - stress region**:
- In the lower uniaxial stress (such as below 5.2 GPa), the changes in structural parameters, electronic structure and magnetic properties with stress are basically linear. For example, the total magnetic moment linearly decreases from 2.80 µB to 2.65 µB.

2. **High - stress region**:
- When the uniaxial stress increases to about 7.6 GPa, the changes in structural parameters are no longer linear. At this time, the c/a ratio decreases by about 20%, and the volume decreases by about 10%.
- The electronic structure also changes significantly. The energy band from the Mn d - state approaches the Fermi level, resulting in a sharp drop in the magnetic moment to 0.26 µB.

### Conclusion
The author has studied in detail the changes in the physical properties of MnAs under uniaxial stress through first - principles calculations. The results show that stress will not only cause changes in structural parameters, but also have an important impact on the electronic structure and magnetic properties. Especially under high - stress conditions, these changes are nonlinear and significant. These findings provide new insights into understanding the physical properties of strained MnAs films and help to guide the design and optimization of future spintronic devices.

### Formula summary
- Total magnetic moment: \[M_{\text{tot}}=\frac{1}{\Omega_{\text{cell}}}\int(\rho^{\uparrow}(r)-\rho^{\downarrow}(r))dr\]
- Absolute magnetic moment: \[M_{\text{abs}}=\frac{1}{\Omega_{\text{cell}}}\int|\rho^{\uparrow}(r)-\rho^{\downarrow}(r)|dr\]

where $\rho^{\uparrow}(r)$ and $\rho^{\downarrow}(r)$ represent the spin - up and spin - down electron densities respectively, and $\Omega_{\text{cell}}$ is the unit cell volume.