Permutations of the transverse momentum dependent effective valence-band potential for layered heterostructures. Pseudomorphic strain effects

L. Diago-Cisneros,J. J. Flores-Godoy,A. Mendoza-Álvarez,G. Fernández-Anaya

DOI: https://doi.org/10.48550/arXiv.1406.2677

2014-06-11

Abstract:The evolution of transverse-momentum-dependent effective band offset ($V_{\mathrm{eff}}$) profile for heavy (\emph{hh})- and light-holes (\emph{lh}), is detailed studied. Several new features in the metamorphosis of the standardized fixed-height $V_{\mathrm{eff}}$ profile for holes, in the presence of gradually increasing valence-band mixing and pseudomorphic strain, are presented. In some $III-V$ unstrained semiconducting layered heterostructures a fixed-height potential, is not longer valid for \emph{lh}. Indeed, we found ---as predicted for electrons---, permutations of the $V_{\mathrm{eff}}$ character for \emph{lh}, that resemble a "\emph{keyboard}", together with bandgap changes, whenever the valence-band mixing varies from low to large intensity. Strain is able to diminish the \emph{keyboard} effect on $V_{\mathrm{eff}}$, and also makes it emerge or vanish occasionally. We found that multiband-mixing effects and stress induced events, are competitors mechanisms that can not be universally neglected by assuming a fixed-height rectangular spatial distribution for fixed-character potential energy, as a reliable test-run input for heterostructures. Prior to the present report, neither direct transport-domain measurements, nor theoretical calculations addressed to these $V_{\mathrm{eff}}$ evolutions and permutations, has been reported for holes, as far as we know. Our results may be of relevance for promising heterostructure's design guided by valence-band structure modeling to enhance the hole mobility in $III-V$ materials.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on the following aspects:

1. **Evolution of the effective valence - band offset potential (\( V_{\text{eff}} \))**:
- This study explores in detail the variation of the effective valence - band offset potential \( V_{\text{eff}} \) with respect to the transverse - momentum dependence for heavy holes (hh) and light holes (lh) in layered heterostructures. Specifically, the author studies the changes in the \( V_{\text{eff}} \) profile of a fixed height under the conditions of gradually increasing valence - band mixing and pseudomorphic strain.

2. **Keyboard Effect**:
- It is found that in some unstrained III - V semiconductor layered heterostructures, for light holes (lh), the assumption of a fixed - height potential energy no longer holds. Instead, as the valence - band mixing strength changes from low to high, the characteristics of \( V_{\text{eff}} \) will change in a "keyboard - like" arrangement, that is, the phenomenon of role - swapping between QB (quantum barrier) and QW (quantum well). This change is similar to the previous prediction for electron studies.

3. **Effect of strain on the keyboard effect**:
- Strain can weaken the influence of the keyboard effect on \( V_{\text{eff}} \), and sometimes make this effect appear or disappear. By introducing multi - band mixing effects and stress - induced events, the author points out that these mechanisms are competitive, and a fixed - height rectangular spatial distribution cannot be simply assumed as a reliable test input.

4. **Theoretical model and numerical simulation**:
- To verify the above theories, the author uses the Kohn - Lüttinger (KL) model Hamiltonian to describe the effective valence - band offset potential \( V_{\text{eff}} \), and conducts detailed numerical simulations. These simulations cover different material combinations (such as GaAs/AlAs/GaAs and InAs/AlSb/InAs) under unstrained and strained conditions.

5. **Application prospects**:
- The research results are helpful for guiding the heterostructure design based on valence - band structure modeling to enhance the hole mobility in III - V materials. This is of great significance for the development of high - performance low - dimensional electronic and optoelectronic devices.

In summary, this paper aims to deeply understand the influence of valence - band mixing and strain on the effective valence - band offset potential \( V_{\text{eff}} \), reveal its evolution law, and explore the potential significance of these factors in practical applications.