Suppression of pinhole defects in thin film CdS/CdTe solar cell via gelatin-based negative photoresist passivation

Hongjiang Liu,Yufeng Zhou,Qiaomu Xie,Gang Wang,Meng Jiang,Jingong Pan,Ruilin Wang
DOI: https://doi.org/10.1016/j.mssp.2022.106817
IF: 4.1
2022-09-01
Materials Science in Semiconductor Processing
Abstract:The existence of pinholes at the CdS/CdTe and CdTe/back contact interfaces is one of the main obstacles to achieve high power conversion efficiency (PCE) in thin film CdS/CdTe solar cells, which leads to the formation of shunt paths in the devices. In this paper, a gelatin-based negative photoresist (Gel-NP) is utilized to fill the pinhole defects of CdTe thin film in photovoltaic device with FTO/CdS/CdTe/Mo/Al/Cr structure. The results showed that the pinholes in CdTe thin film have been effectively filled via the passivation of the Gel-NP, and no residue was found on the surface of CdTe thin film, thus increasing the cell shunt resistance. In addition, the optoelectronic performance of CdS/CdTe thin film solar cell under different Cu diffusion concentrations have been investigated with and without Gel-NP treatment, in which Gel-NP passivates the surface of CdTe resulting in a large amount of Cu enriched on the back, forming CuxTe after annealing. As a result, the average PCE of FTO/CdS/CdTe/Mo/Al/Cr structured solar cell increased from 10.4% to 13.7% via Gel-NP passivation (14.1% of champion efficiency), which exhibits improved reproducibility as well.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
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