Using a CdS under-layer to suppress charge carrier recombination at the Ag2S/FTO interface

Hong Chen,Yan Lei,Xiaogang Yang,Chaoliang Zhao,Zhi Zheng

DOI: https://doi.org/10.1016/j.jallcom.2021.160348

IF: 6.2

2021-10-01

Journal of Alloys and Compounds

Abstract:<p>The recombination of photoinduced charge carriers is detrimental to the photovoltaic performance of solar cells. In this work, we used CdS as an under-layer to reduce the recombination of photoinduced charge carriers at the Ag₂S/FTO (F-doped SnO₂) interface. The CdS under-layer was deposited onto an FTO substrate using a facile chemical bath deposition (CBD) method. By controlling the thickness of the CdS film between Ag₂S and FTO, the recombination of photoinduced charge carriers was successfully suppressed. The effect of the CdS under-layer on the charge carrier recombination was carefully evaluated by transient surface photovoltage (TSPV) measurements, electrochemical impedance spectroscopy (EIS) and a photoelectrochemical method. The power conversion efficiency (PCE) of solar cell devices with a 40 nm CdS under-layer is 1.16%, which is ~52% enhancement compared to those of FTO/Ag₂S-based solar cell devices. Our work may provide a useful strategy to suppress photoinduced charge carrier recombination at the electrode and absorber semiconductor interface.</p>

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering