α-BaF 2 Nanoparticle Substrate-Enabled γ-CsPbI 3 Heteroepitaxial Growth for Efficient and Bright Deep-Red Light-Emitting Diodes

Qian Zhang,Yong-Hui Song,Jing-Ming Hao,Yi-Feng Lan,Li-Zhe Feng,Xue-Chen Ru,Jing-Jing Wang,Kuang-Hui Song,Jun-Nan Yang,Tian Chen,Hong-Bin Yao
DOI: https://doi.org/10.1021/jacs.2c01034
IF: 15
2022-04-20
Journal of the American Chemical Society
Abstract:All-inorganic CsPbI<sub>3</sub> perovskite is attractive for deep-red light-emitting diodes (LEDs) because of its excellent carrier mobility, high color purity, and solution processability. However, the high phase transition energy barrier of optically active CsPbI<sub>3</sub> black phase hinders the fabrication of efficient and bright LEDs. Here, we report a novel α-BaF<sub>2</sub> nanoparticle substrate-promoted solution-processable heteroepitaxial growth to overcome this hindrance and obtain high-quality optically active γ-CsPbI<sub>3</sub> thin films, achieving efficient and bright deep-red LEDs. We unravel that the highly exposed planes on the α-BaF<sub>2</sub> nanoparticle-based heteroepitaxial growth substrate have a 99.5% lattice matching degree with the (110) planes of γ-CsPbI<sub>3</sub>. This ultrahigh lattice matching degree initiates solution-processed interfacial strain-free epitaxial growth of low-defect and highly oriented γ-CsPbI<sub>3</sub> thin films on the substrate. The obtained γ-CsPbI<sub>3</sub> thin films are uniform, smooth, and highly luminescent, based on which we fabricate efficient and bright deep-red LEDs with a high peak external quantum efficiency of 14.1% and a record luminance of 1325 cd m<sup>-2</sup>.
chemistry, multidisciplinary
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