Switchable interfacial reaction enables bright and stable deep-red perovskite light-emitting diodes

Jiejun Zeng,Xiaoyue Sun,Yang Liu,Wangxiao Jin,Siyu He,Xitong Zhu,Kai Niu,Guolong Sun,Jinyi Li,Haiping He,Tulai Sun,Zhizhen Ye,Yizheng Jin

DOI: https://doi.org/10.1038/s41566-023-01369-9

IF: 35

2024-01-10

Nature Photonics

Abstract:High-performance deep-red light-emitting diodes (LEDs) are important for biomedical and agricultural applications. However, the development of bright and stable solution-processed deep-red LEDs remains challenging. Here we design a switchable interfacial deprotonation reaction between the perovskite and electron-transporting layer to fabricate high-quality CsPbI 3 perovskite films, leading to stable and bright deep-red LEDs. Our approach starts with a precursor solution containing guanidine hydroiodide and a layer of alkaline zinc hydroxide. On annealing, the interfacial reaction is switched on, leading to the formation of high-quality CsPbI 3 . The alkaline zinc hydroxide layer is simultaneously converted in situ to alkalescent ZnO, which prevents the formation of the undesirable yellow-phase CsPbI 3 perovskite. As a result, our perovskite LEDs based on CsPbI 3 demonstrate a long half-lifetime of approximately 33.6 h under a driving current density of 100 mA cm –2 and an exceptionally high radiance of around 1,980 W sr −1 m –2 . Moreover, by partly substituting iodide with bromide, we achieve bright deep-red perovskite LEDs with an emission wavelength of 691 nm and an operational half-lifetime of 50.3 h at 100 mA cm –2 .

optics,physics, applied