Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO 3 thin films on LaNiO 3 ‐buffered silicon

Lisha Liu,Xiaofu Qiu,Suwei Zhang,Zhen Zhou,Yu Huang,Liang Shu,Yue‐Yu‐Shan Cheng,Xuping Wang,Jing‐Feng Li

DOI: https://doi.org/10.1111/jace.17348

IF: 4.186

2020-07-16

Journal of the American Ceramic Society

Abstract:<p>The orientation modulation of ferroelectric materials is a suitable method to optimize material performance. Textured Bi_1‐<i>_x </i>Sm<i>_x </i>FeO₃ thin films (near the rhombohedral‐orthorhombic (R‐O) phase boundary, i.e., <i>x </i>=0, 0.1, 0.12, 0.14 and 0.16) were fabricated using the sol‐gel process by introducing a LaNiO₃ (LNO) seed layer. Structural and ferroelectric characterizations were used to investigate the effect of texturing on the Sm doping‐induced R‐O phase transition of the BiFeO₃ thin films. It was found that a phase transition occurred from the rhombohedral to the orthorhombic structure with increasing Sm content in the non‐textured polycrystalline films, resulting in an R‐O phase boundary at <i>x </i>=0.12. In contrast, the R‐O phase boundary in the textured films was more diffuse, indicating a two‐phase coexistence in a boarder range of Sm doping levels (<i>x </i>=0.12‐0.16). This discrepancy was attributed to the complexity of the stress status in thin films. The dielectric and electrical properties of the non‐textured and textured samples were investigated. The current study shows that the phase boundary in ferroelectric thin films can be altered by diverse means, thus providing insights into potential applications.</p>

materials science, ceramics