Phase Transition and Piezoelectricity of Sol–gel-Processed Sm-doped BiFeO3 Thin Films on Pt(111)/Ti/SiO2/Si Substrates

Wei Sun,Jing-Feng Li,Qi Yu,Li-Qian Cheng

DOI: https://doi.org/10.1039/c4tc02886d

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

What problem does this paper attempt to address?

Thickness-dependent phase boundary in Sm-doped BiFeO3 piezoelectric thin films on Pt/Ti/SiO2/Si substrates

wei sun,jingfeng li,fangyuan zhu,qi yu,liqian cheng,zhen zhou

DOI: https://doi.org/10.1039/c5cp03080c

IF: 3.3

2015-01-01

Physical Chemistry Chemical Physics

Abstract:Sm-doped BiFeO3 thin films were fabricated on platinized silicon substrates via a sol-gel method. Sm contents and thicknesses were varied in a wide range to investigate their effects on the phase structure and piezoelectricity. X-ray diffraction and Raman spectroscopy experiments revealed a rhombohedral to orthorhombic phase transition and the co-existence of both phases in a certain compositional vicinity. It is found that the proportion of a rhombohedral phase increased with film thickness at the compositions corresponding to the phase transition boundary, indicating the influence of the film thickness on the phase structure. The phase transition phenomenon and film thickness effect on the boundary were also studied by piezoresponse force microscopy. Based on the structure analysis and piezoelectric characterization results, a phase diagram of thickness versus composition was proposed, in which the morphotropic phase boundary was located at 9% to 11% in thinner Sm-doped films and shifted towards the Sm-rich side with increasing thickness.
Ferroelectric Domains and Phase Transition of Sol-Gel Processed Epitaxial Sm-doped BiFeO3 (001) Thin Films

Zhen Zhou,Wei Sun,Zhenyu Liao,Shuai Ning,Jing Zhu,Jing-Feng Li

DOI: https://doi.org/10.1016/j.jmat.2017.11.002

IF: 8.589

2018-01-01

Journal of Materiomics

Abstract:BiFeO3, a room-temperature multiferroic material, has recently been increasingly applied as a potential lead-free piezoelectric material due to its large piezoelectricity achieved by doping. In this work, 12% Sm-doped BiFeO3 epitaxial thin films were fabricated on Nb-doped SrTiO3 (001) single crystal substrates via sol-gel method. The epitaxy was verified by reciprocal space mapping (RSM) and transmission electron microscope (TEM). The TEM results indicated the coexistence of R3c and Pbam phases in the film. The domains and piezoelectric properties from room temperature to 200 °C were characterized by piezoresponse force microscopy (PFM). Domains became active from 110 °C to 170 °C, and domain configurations changed obviously. A partially fading piezoresponse indicated the emergence of antiferroelectric Pbam. The in-situ domain analysis suggested that the phase transition was accompanied by domain wall motion. Switching spectroscopy PFM (SS-PFM) was further conducted to investigate the piezoresponse during the phase transition. Anomalous responses were found in both ON and OFF states at 170 °C, and the film exhibits typical antiferroelectric behavior at 200 °C, implying that the completion of phase transition and structure turned to the Pbam phase. This work revealed the origin of the high piezoresponse of Sm-doped BiFeO3 thin films at the morphotropic phase boundary (MPB).
Macroscopic and Local Approaches of Phase Transition in Sol-Gel Synthesized (Bi0.5na0.5)tio3-Srtio3 Thin Films

Hyun-Young Lee,Jin Luo,Zhen Zhou,Wei Sun,Jing-Feng Li

DOI: https://doi.org/10.1039/c8cp01830h

2018-01-01

Abstract:High-quality (1 - x)(Bi0.5Na0.5)TiO3-xSrTiO(3) lead-free piezoelectric thin films (x = 0, 0.1, and 0.25) on Pt(111)/Ti/SiO2/Si(100) substrates were prepared by a sol-gel method. The microstructures of the thin films as a function of SrTiO3 doping level and temperature were investigated by X-ray diffraction and Raman spectroscopy. Their temperature-and frequency-dependent piezoelectric properties were studied on the nanoscale using switching spectroscopy piezoresponse force microscopy (SS-PFM). A rhombohedral ferroelectric to pseudocubic relaxor phase transition was observed when either ST content or temperature increased. The significant frequency dependence of both ferroelectric and piezoelectric properties was also disclosed by analyzing polarization hysteresis loops on the macroscopic scale and local switching dynamics at various frequencies. It was determined that the short-range order clusters came out through the long-range ferroelectric order, thus the nanoscale approaches are consistent with macroscopic data at elevated temperatures and various frequency ranges.
Impact of texturing on the phase transitions in sol-gel-processed Bi(Sm)FeO(3)thin films on LaNiO3-buffered silicon

Lisha Liu,Xiaofu Qiu,Suwei Zhang,Zhen Zhou,Yu Huang,Liang Shu,Yue-Yu-Shan Cheng,Xuping Wang,Jing-Feng Li

DOI: https://doi.org/10.1111/jace.17348

IF: 4.186

2020-01-01

Journal of the American Ceramic Society

Abstract:The orientation modulation of ferroelectric materials is a suitable method to optimize material performance. Textured Bi(1-)(x)Sm(x)FeO(3)thin films (near the rhombohedral-orthorhombic (R-O) phase boundary, that is,x = 0, 0.1, 0.12, 0.14, and 0.16) were fabricated using the sol-gel process by introducing a LaNiO3(LNO) seed layer. Structural and ferroelectric characterizations were used to investigate the effect of texturing on the Sm doping-induced R-O phase transition of the BiFeO(3)thin films. It was found that a phase transition occurred from the rhombohedral to the orthorhombic structure with increasing Sm content in the nontextured polycrystalline films, resulting in an R-O phase boundary atx = 0.12. In contrast, the R-O phase boundary in the textured films was more diffuse, indicating a two-phase coexistence in a boarder range of Sm doping levels (x = 0.12-0.16). This discrepancy was attributed to the complexity of the stress status in thin films. The dielectric and electrical properties of the nontextured and textured samples were investigated. The current study shows that the phase boundary in ferroelectric thin films can be altered by diverse means, thus providing insights into potential applications.
Structure Evolution and Piezoelectric Properties Across the Morphotropic Phase Boundary of Sm-substituted BiFeO3 Ceramics

Xin,Xiao Qiang Liu,Xiang Ming Chen

DOI: https://doi.org/10.1063/1.4941820

IF: 2.877

2016-01-01

Journal of Applied Physics

Abstract:The evolution of structure, ferroelectric, and piezoelectric properties in Bi1−xSmxFe0.99Ti0.01O3 ceramics was extensively investigated within the entire morphotropic phase boundary region with 0 ≤ x ≤ 0.20. A sequential phase transition of R3c-Pna21-Pbnm with increasing Sm content was revealed by Rietveld refinement of the X-ray diffraction data together with the macroscopic ferroelectric measurements. Both ferroelectric and piezoelectric properties showed a great enhancement in the vicinity of the R3c/Pna21 (polar-to-polar) phase boundary, which should be caused by the field-induced phase transition between these two phases. Such field-induced phase transition might be essentially accompanied by a change of magnetic state, which indicated a way of controlling magnetism by means of electric field.
Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO 3 thin films on LaNiO 3 ‐buffered silicon

Lisha Liu,Xiaofu Qiu,Suwei Zhang,Zhen Zhou,Yu Huang,Liang Shu,Yue‐Yu‐Shan Cheng,Xuping Wang,Jing‐Feng Li

DOI: https://doi.org/10.1111/jace.17348

IF: 4.186

2020-07-16

Journal of the American Ceramic Society

Abstract:The orientation modulation of ferroelectric materials is a suitable method to optimize material performance. Textured Bi1‐x Smx FeO3 thin films (near the rhombohedral‐orthorhombic (R‐O) phase boundary, i.e., x =0, 0.1, 0.12, 0.14 and 0.16) were fabricated using the sol‐gel process by introducing a LaNiO3 (LNO) seed layer. Structural and ferroelectric characterizations were used to investigate the effect of texturing on the Sm doping‐induced R‐O phase transition of the BiFeO3 thin films. It was found that a phase transition occurred from the rhombohedral to the orthorhombic structure with increasing Sm content in the non‐textured polycrystalline films, resulting in an R‐O phase boundary at x =0.12. In contrast, the R‐O phase boundary in the textured films was more diffuse, indicating a two‐phase coexistence in a boarder range of Sm doping levels (x =0.12‐0.16). This discrepancy was attributed to the complexity of the stress status in thin films. The dielectric and electrical properties of the non‐textured and textured samples were investigated. The current study shows that the phase boundary in ferroelectric thin films can be altered by diverse means, thus providing insights into potential applications.

materials science, ceramics
Reversible Phase Transition Induced Large Piezoelectric Response in Sm-doped BiFe O 3 with a Composition Near the Morphotropic Phase Boundary

Zhenyu Liao,Fei Xue,Wei Sun,Dongsheng Song,Qiqi Zhang,Jing-Feng Li,Long-Qing Chen,Jing Zhu

DOI: https://doi.org/10.1103/physrevb.95.214101

2017-01-01

Abstract:Materials with the morphotropic phase boundary (MPB) exhibit an ultrahigh mechanical response to electrical inputs, which has been widely used in applications such as sensors and actuators. Recently, the rare-earth element doped $\mathrm{BiFe}{\mathrm{O}}_{3}$ (BFO) was found to possess a MPB between a rhombohedral polar phase and an orthorhombic antipolar phase with enhanced piezoelectric response, enabling it to be an attractive alternative to toxic Pb-based piezoelectric materials. Despite theoretical and experimental efforts, the phase transition behavior under electric fields has not been directly confirmed, leaving a gap in the understanding of the origin of enhanced piezoelectricity. Here, we have demonstrated an irreversible electric-field induced phase transition from the antipolar phase to the polar phase in Sm-doped BFO with the pre-MPB composition, and a reversible phase transition between the polar phase and the antipolar/nonpolar phase in Sm-doped BFO with the MPB composition. In situ transmission electron microscopy technique combined with thermodynamic calculation based on the Ginzburg-Landau-Devonshire theory indicates that the electric-field induced reversible phase transition leads to enhanced piezoelectric response and double P-E hysteresis loops. These results provide us a deep insight into the mechanism of exotic electromechanical response in the rare-earth element doped BFO system with the composition near the MPB.
Temperature and Composition Dependent Phase Transitions of Lead-Free Piezoelectric (Bi0.5na0.5)tio3-Batio3 Thin Films.

Zhen Zhou,Jin Luo,Wei Sun,Jing-Feng Li

DOI: https://doi.org/10.1039/c7cp03530f

2017-01-01

Abstract:Extensive studies on (Bi0.5Na0.5)TiO3-BaTiO3 piezoceramics have aroused growing interest in developing high-performance piezoelectric films based on this promising lead-free piezoelectric system. High quality (1 - x%) (Bi0.5Na0.5)TiO3-x% BaTiO3 (x = 0-15) thin films were synthesized on Pt(111)/Ti/SiO2/Si(100) substrates via a sol-gel method. The phase transitions as functions of composition and temperature were investigated by X-ray diffraction (XRD) and temperature-dependent Raman spectra analysis. A morphotropic phase boundary (MPB) located at 5 ≤ x ≤ 10 was found in the films, being identical to that in bulk materials. Additionally, complicated structural changes with temperature in a wide composition range were observed, which correspond to the evolution from a low-symmetry ferroelectric phase or a relaxor phase to high-symmetry relaxor phases. The ferroelectricity and piezoelectricity were also systematically studied with an emphasis on the influence of composition and phase structure. A phase diagram focusing on the above two kinds of phase transitions has been proposed in this work.
Phase transitions, phase coexistence, and piezoelectric switching behavior in highly strained BiFeO(3) films.

C Beekman,W Siemons,T Z Ward,M Chi,J Howe,M D Biegalski,N Balke,P Maksymovych,A K Farrar,J B Romero,P Gao,X Q Pan,D A Tenne,H M Christen

DOI: https://doi.org/10.1002/adma.201302066

IF: 29.4

2013-01-01

Advanced Materials

Abstract:Highly strained BiFeO3 films transition into a true tetragonal state at 430 degrees C but remain polar to much higher temperatures (similar to 800 degrees C). Piezoelectric switching is only possible up to 300 degrees C, i.e., at temperatures for which strain stabilizes the stripe- like coexistence of multiple polymorphs.
Microscopic Origin Of The High Piezoelectric Response Of Sm-Doped Bifeo3 Near The Morphotropic Phase Boundary

Zhenyu Liao,Wei Sun,Qiqi Zhang,Jing-Feng Li,Jing Zhu

DOI: https://doi.org/10.1063/1.5091509

IF: 2.877

2019-01-01

Journal of Applied Physics

Abstract:Rare-earth element-doped BiFeO3 has an ultrahigh piezoelectric response near the morphotropic phase boundary (MPB), making it a promising substitute for toxic lead-based piezoelectric materials. As a ferroelectric-antiferroelectric MPB, its microscopic mechanism, especially the contribution of each phase to the piezoelectric performance, is still unclear. In this work, the origin of the giant piezoelectric response of Sm-doped BiFeO3 thin films was studied by combining nanoscale in situ electric field experiments and atomic-resolution electron microscopy. Two independent reversible phase transitions were found under an external electric field: a phase transition between the polar and nonpolar phases and a phase transition between the polar and antipolar phases. Calculations indicated that the enhancement of the piezoelectric response at the MPB originated from these two reversible phase transitions, which were realized via the nucleation of the nanoscale new phase and the motion of the phase boundary under the external electric field. The above results provide deeper insight into the mechanism of the electromechanical response near the ferroelectric-antiferroelectric MPB in rare-earth element-doped BiFeO3 thin films. Published under license by AIP Publishing.
Phase Transitions, Phase Coexistence, and Piezoelectric Switching Behavior in Highly Strained BiFeO3Films (Adv. Mater. 39/2013)

C. Beekman,W. Siemons,T. Z. Ward,M. Chi,J. Howe,M. D. Biegalski,N. Balke,P. Maksymovych,A. K. Farrar,J. B. Romero,P. Gao,X. Q. Pan,D. A. Tenne,H. M. Christen

DOI: https://doi.org/10.1002/adma.201370249

IF: 29.4

2013-01-01

Advanced Materials

Abstract:A complex phase coexistence forms in epitaxial films of BiFeO3 due to the effects of epitaxial strain and temperature-induced stresses. The work by H. M. Christen and co-workers on page 5561 shows that the stripe patterns that form upon cooling of these atomically flat layers are a prerequisite for piezoelectric switching, i.e., the phase coexistence enables the functionality of the material.
Structure, Ferroelectricity and Piezoelectricity Evolutions of Bi1−xSmxFeO3 at Various Temperatures

Xiaomin Chen,Yiping Wang,Ying Yang,Guoliang Yuan,Jiang Yin,Zhiguo Liu

DOI: https://doi.org/10.1016/j.ssc.2011.12.044

IF: 1.934

2012-01-01

Solid State Communications

Abstract:Insulated Bi1-xSmxFeO3 (x = 0-0.25) were prepared to study their multiferroic properties at various temperatures. Bi1-xSmxFeO3 (x = 0-0.12) shows a rhombohedral-like phase, ferroelectric polarization of >17.8 mu C/cm(2), piezoelectric d(33) value of >35 pC/N at room temperature. Bi1-xSmxFeO3 (x = 0.125-0.2) has a ferroelectric triclinic phase and an anti-polar orthorhombic phase together at room temperature, and Bi0.75Sm0.25FeO3 is mainly composed of a non-polar orthorhombic phase. After the polarized Bi1-xSmxFeO3 (x = 0-0.165) was annealed at various high temperatures, the d(33) evolution supports ferroelectric component exist above 500 degrees C. Raman spectra suggests that the main component of Bi0.875SM0.125FeO3 does not keep a rhombohedral ferroelectric phase above 400 degrees C, thus its ferroelectric traits at high temperature should be due to ferroelectric clusters embedded in orthorhombic phase. (C) 2012 Elsevier Ltd. All rights reserved.
Fabrication and Properties of Sol–Gel‐Derived BiScO3–PbTiO3 Thin Films

Hai Wen,Xiaohui Wang,Longtu Li

DOI: https://doi.org/10.1111/j.1551-2916.2006.01031.x

IF: 4.186

2006-01-01

Journal of the American Ceramic Society

Abstract:BiScO3–PbTiO3 (BSPT) thin films near the morphotropic phase boundary were successfully fabricated on Pt(111)/Ti/SiO2/Si substrates via an aqueous sol–gel method. The thin films exhibited good crystalline quality and dense, uniform microstructures with an average grain size of 50 nm. The dielectric, ferroelectric, and piezoelectric properties of the sol–gel‐derived BSPT thin films were investigated. A remanent polarization of 74 μC/cm2 and a coercive field of 177 kV/cm were obtained. The local effective piezoelectric coefficient d*33 was 23 pC/N at 2 V, measured by a scanning probe microscopy system. The dielectric peak appeared at 435°C, which was 80°C higher than that of Pb(Ti, Zr)O3 thin films.
Sol–gel-processed (001)-textured BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates with PbO seeding nanocrystals

wei sun,zhen zhou,jingfeng li

DOI: https://doi.org/10.1039/c5ra23226k

IF: 4.036

2016-01-01

RSC Advances

Abstract:50 to 200 nm-thick BiFeO3 thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates using the sol-gel method. A PbO seeding layer was introduced between the BiFeO3 films and the platinum electrode surface, which was found to be effective for the formation of a (001)-textured BiFeO3 structure. A high degree of (001) orientation up to 98.3% was achieved in a 200 nm-thick film via a layer-by-layer annealing process. Cross-section images by scanning electron microscopy revealed a columnar crystal structure, which was consistent with the high texturing degree enhanced by the layer-by-layer annealing method. By investigating the dielectric, ferroelectric and piezoelectric properties of the randomly oriented and (001)-oriented films, it was revealed that significant enhancements of the dielectric and piezoelectric properties were achieved in textured samples. The texturing mechanism was also discussed.
Sol-gel Processing and Nanoscale Characterization of (Bi0.5na0.5)tio3-Srtio3 Lead-Free Piezoelectric Thin Films

Hyun-Young Lee,Wei Sun,Jin Luo,Zhen Zhou,Jing-Feng Li

DOI: https://doi.org/10.1016/j.ceramint.2017.11.210

IF: 5.532

2018-01-01

Ceramics International

Abstract:(1-x)(Bi0.5Na0.5)TiO3-xSrTiO3 (BNT-xST) (0 ≤ x ≤ 0.4) thin films were fabricated using a sol-gel technique on Pt(111)/Ti/SiO2/Si(100) substrates, which were investigated by piezoresponse force microscopy (PFM) and Raman spectroscopy. The composition-induced phase transition was analyzed by acquiring structural variations and the domain distribution on a local scale. Raman spectra showed phonon anomalies with peak broadening and shifting when increasing SrTiO3 (ST) concentrations were used. Changes in the domain morphology with changes in the composition were observed, and grains smaller than 0.5µm were observed at lower concentrations of x = 0–0.25, while larger grains appeared with increasing ST contents. The switching spectroscopy PFM (SS-PFM) results supported a ferroelectric (FE) to relaxor ferroelectric (RFE) phase transition at approximately x ≈ 0.3 by means of analyzing the parameters as a function of the composition including the piezoresponse parameters of hysteresis loops (Dmax, Drem) and amplitude butterfly loops (Stotal, Sneg). Hence, these results demonstrated that the composition-driven FE to RFE phase transition behavior, which is consistent with the localized response behavior, is dependent on the ST content in bulk BNT-xST ceramics.
Phase Coexistence Near a Morphotropic Phase Boundary in Sm-doped BiFeO3 Films

S. B. Emery,C. -J. Cheng,D. Kan,F. J. Rueckert,S. P. Alpay,V. Nagarajan,I. Takeuchi,B. O. Wells

DOI: https://doi.org/10.1063/1.3481065

2010-06-16

Abstract:We have investigated heteroepitaxial films of Sm-doped BiFeO3 with a Sm-concentration near a morphotropic phase boundary. Our high-resolution synchrotron X-ray diffraction, carried out in a temperature range of 25C to 700C, reveals substantial phase coexistence as one changes temperature to crossover from a low-temperature PbZrO3-like phase to a high-temperature orthorhombic phase. We also examine changes due to strain for films greater or less than the critical thickness for misfit dislocation formation. Particularly, we note that thicker films exhibit a substantial volume collapse associated with the structural transition that is suppressed in strained thin films.

Materials Science
Change in the magnetic structure of (Bi,Sm)FeO3 thin films at the morphotropic phase boundary probed by neutron diffraction

Shingo Maruyama,Varatharajan Anbusathaiah,Amy Fennell,Mechthild Enderle,Ichiro Takeuchi,William D. Ratcliff

DOI: https://doi.org/10.48550/arXiv.1407.6418

2014-07-24

Abstract:We report on the evolution of the magnetic structure of BiFeO3 thin films grown on SrTiO3 substrates as a function of Sm doping. We determined the magnetic structure using neutron diffraction. We found that as Sm increases, the magnetic structure evolves from a cycloid to a G-type antiferromagnet at the morphotropic phase boundary, where there is a large piezoelectric response due to an electric-field induced structural transition. The occurrence of the magnetic structural transition at the morphotropic phase boundary offers another route towards room temperature multiferroic devices.

Materials Science
Phase Transitional Behavior and Piezoelectric Properties of Lead‐Free (na0.5k0.5)nbo3–(bi0.5k0.5)tio3 Ceramics

Ruzhong Zuo,Xusheng Fang,Chun Ye,Longtu Li

DOI: https://doi.org/10.1111/j.1551-2916.2007.01767.x

IF: 4.186

2007-01-01

Journal of the American Ceramic Society

Abstract:(1−x)(Na0.5K0.5)NbO3–(Bi0.5K0.5)TiO3 solid solution ceramics were successfully fabricated, exhibiting a continuous phase transition with changing x at room temperature from orthorhombic, to tetragonal, to cubic, and finally to tetragonal symmetries. A morphotropic phase boundary (MPB) between orthorhombic and tetragonal ferroelectric phases was found at 2–3 mol% (Bi0.5K0.5)TiO3 (BKT), which brings about enhanced piezoelectric and electromechanical properties of piezoelectric constant d33=192 pC/N and planar electromechanical coupling coefficient kp=45%. The MPB composition has a Curie temperature of 370°–380°C, comparable with that of the widely used PZT materials. These results demonstrate that this system is a promising lead‐free piezoelectric candidate material.
Structural, dielectric and ferroelectric properties of BiFeO3–BiInO3 solid solution thin films obtained by sol-gel method

Anlong Fan,Yining Zhai,Kangyu Zhong,Qi Gao,Lisha Liu,Jiaojiao Yi

DOI: https://doi.org/10.1016/j.ceramint.2023.08.258

IF: 5.532

2023-08-01

Ceramics International

Abstract:The construction of phase boundaries is a well-known strategy to enhance the performances of ferroelectrics. In the present work, BiFeO3 and BiInO3 with attractive high Curie temperature of 830 °C and 600 °C were considered to reveal an unexplored phase boundary. (100-x)BiFeO3-xBiInO3 (x = 10, 20, 30, 40, 41, 50, 60, and 80) films, with thicknesses of approximately 289 nm, were obtained through industrial-scalable sol-gel method on Pt/Ti/SiO2/Si substrates. Complete solid solution can form between BiFeO3 and BiInO3, changing from rhombohedral to orthorhombic structure with the increase of BiInO3 content. The macroscopic dielectric, ferroelectric and piezoelectric properties of the thin films were systematically studied to understand the effect of the solid solution, with its phase diagram being proposed. A phase boundary near 60BiFeO3–40BiInO3 is formed with much superior polarization switch and piezoelectric response, of which the Curie temperature is as high as 470 °C. The results not only deepen the understanding of BiFeO3-based solid solutions, but also push forward potential applications of BiFeO3-based films in devices particularly for potential application at elevated temperature.

materials science, ceramics
Tuning ferroelectric domains and polarization properties of flexible BiFeO 3 thin films by phase transition engineering

Jia He,Shibing Xiao,Huiting Sui,Fuling Wu,Xiao Li,Cheng Yang,Piyu Gong,Jianing Zhu,Xiaofang Liu,Huajun Sun

DOI: https://doi.org/10.1016/j.jallcom.2024.176756

IF: 6.2

2024-10-02

Journal of Alloys and Compounds

Abstract:In the present investigation, thin films of flexible (Bi 1-x Sm x )(Fe 0.95 Mn 0.05 )O 3 (denoted as BSFM0, BSFM4, BSFM8, and BSFM12 for x=0 %, 4 %, 8 %, and 12 %, respectively) were synthesized on metallic Ni-Cr substrates via the sol-gel technique. A comprehensive examination was conducted to elucidate the influence of varying concentrations of Sm 3+ substitution on the phase constitution, oxygen vacancy concentration, and leakage behavior of the (Bi 1-x Sm x )(Fe 0.95 Mn 0.05 )O 3 films. Utilizing X-ray diffraction (XRD) and Raman spectrometry, it was ascertained that all films exhibited a composite structure comprising orthorhombic (Pnma) and rhombohedral (R3c) phases. An augmentation in Sm 3+ doping led to a non-monotonic variation in the R3c phase content, initially increasing and subsequently decreasing, while the nonpolar Pnma phase demonstrated a progressive enhancement. The distorted R3c phase was found to promote the flipping of the domain architecture, thereby augmenting the polarization attributes. Notably, at a Sm doping level of 4 %, the maximum polarization ( P max ) attained was 95 μC/cm 2 , with a remnant polarization ( P r ) of 78 μC/cm 2 . The incorporation of a judicious amount of Sm was observed to curtail film leakage and decelerate the aging phenomenon. The compositional stability of this doping level was evaluated across a frequency spectrum of 0.1–12 kHz and a temperature gradient of 25–200 °C, revealing no propensity for degradation under conditions of polarization, a holding duration of 10 4 s, or fatigue scenarios involving a curvature of 5 mm and 10 8 switching cycles subjected to 10 3 instances of bending. These findings provide innovative insights for the development of next-generation lead-free transducer apparatus and flexible information storage mediums.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering

Phase Transition and Piezoelectricity of Sol–gel-Processed Sm-doped BiFeO3 Thin Films on Pt(111)/Ti/SiO2/Si Substrates

Thickness-dependent phase boundary in Sm-doped BiFeO3 piezoelectric thin films on Pt/Ti/SiO2/Si substrates

Ferroelectric Domains and Phase Transition of Sol-Gel Processed Epitaxial Sm-doped BiFeO3 (001) Thin Films

Macroscopic and Local Approaches of Phase Transition in Sol-Gel Synthesized (Bi0.5na0.5)tio3-Srtio3 Thin Films

Impact of texturing on the phase transitions in sol-gel-processed Bi(Sm)FeO(3)thin films on LaNiO3-buffered silicon

Structure Evolution and Piezoelectric Properties Across the Morphotropic Phase Boundary of Sm-substituted BiFeO3 Ceramics

Impact of texturing on the phase transitions in sol–gel‐processed Bi(Sm)FeO 3 thin films on LaNiO 3 ‐buffered silicon

Reversible Phase Transition Induced Large Piezoelectric Response in Sm-doped BiFe O 3 with a Composition Near the Morphotropic Phase Boundary

Temperature and Composition Dependent Phase Transitions of Lead-Free Piezoelectric (Bi0.5na0.5)tio3-Batio3 Thin Films.

Phase transitions, phase coexistence, and piezoelectric switching behavior in highly strained BiFeO(3) films.

Microscopic Origin Of The High Piezoelectric Response Of Sm-Doped Bifeo3 Near The Morphotropic Phase Boundary

Phase Transitions, Phase Coexistence, and Piezoelectric Switching Behavior in Highly Strained BiFeO3Films (Adv. Mater. 39/2013)

Structure, Ferroelectricity and Piezoelectricity Evolutions of Bi1−xSmxFeO3 at Various Temperatures

Fabrication and Properties of Sol–Gel‐Derived BiScO3–PbTiO3 Thin Films

Sol–gel-processed (001)-textured BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates with PbO seeding nanocrystals

Sol-gel Processing and Nanoscale Characterization of (Bi0.5na0.5)tio3-Srtio3 Lead-Free Piezoelectric Thin Films

Phase Coexistence Near a Morphotropic Phase Boundary in Sm-doped BiFeO3 Films

Change in the magnetic structure of (Bi,Sm)FeO3 thin films at the morphotropic phase boundary probed by neutron diffraction

Phase Transitional Behavior and Piezoelectric Properties of Lead‐Free (na0.5k0.5)nbo3–(bi0.5k0.5)tio3 Ceramics

Structural, dielectric and ferroelectric properties of BiFeO3–BiInO3 solid solution thin films obtained by sol-gel method

Tuning ferroelectric domains and polarization properties of flexible BiFeO 3 thin films by phase transition engineering