Improving phase transition temperature of VO2 via Ge doping: a combined experimental and theoretical study

Lin Wang,Yu-Qi Hao,Wei Ma,Sen Liang

DOI: https://doi.org/10.1007/s12598-020-01655-3

IF: 6.318

2021-01-12

Rare Metals

Abstract:<span class="a-plus-plus abstract-section id-a-sec1"><p class="a-plus-plus">Enhancing the semiconductor–metal phase transition temperature (<em class="a-plus-plus">T</em><sub class="a-plus-plus">SMT</sub>) of VO<sub class="a-plus-plus">2</sub> is of great consequence for further exploring the potential applications of VO<sub class="a-plus-plus">2</sub> at elevated temperatures. In this study, Ge<sup class="a-plus-plus">4+</sup>-doped VO<sub class="a-plus-plus">2</sub> (Ge<sub class="a-plus-plus"><em class="a-plus-plus">x</em></sub>V<sub class="a-plus-plus">1−<em class="a-plus-plus">x</em></sub>O<sub class="a-plus-plus">2</sub>) samples were prepared by the hydrothermal and annealing approach. X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), differential scanning calorimetry (DSC) and resistivity–temperature (<em class="a-plus-plus">R</em>-<em class="a-plus-plus">T</em>) analyses were used to investigate the influence of Ge doping on the lattice structures and phase transition properties of Ge<sub class="a-plus-plus"><em class="a-plus-plus">x</em></sub>V<sub class="a-plus-plus">1–<em class="a-plus-plus">x</em></sub>O<sub class="a-plus-plus">2</sub> samples. We found that the lattice parameter of Ge<sub class="a-plus-plus"><em class="a-plus-plus">x</em></sub>V<sub class="a-plus-plus">1−<em class="a-plus-plus">x</em></sub>O<sub class="a-plus-plus">2</sub> decreased with the Ge concentration increasing from 2 at% to 18 at%, which was further supported by density functional theory (DFT)-based first-principle simulations. <em class="a-plus-plus">T</em><sub class="a-plus-plus">SMT</sub> firstly increased from 64.5 to 73.0 °C at 8 at% Ge and then decreased to 71.5 °C at higher Ge concentration. Furthermore, DFT analysis revealed that the impact of lattice distortion induced by Ge doping rather than the changes in electronic structure is more pronounced on modulating <em class="a-plus-plus">T</em><sub class="a-plus-plus">SMT</sub> of Ge<sub class="a-plus-plus"><em class="a-plus-plus">x</em></sub>V<sub class="a-plus-plus">1−<em class="a-plus-plus">x</em></sub>O<sub class="a-plus-plus">2</sub>. The present work has pointed out the direction that the <em class="a-plus-plus">T</em><sub class="a-plus-plus">SMT</sub> could be enhanced and illustrated the physical reason behind the regulation of <em class="a-plus-plus">T</em><sub class="a-plus-plus">SMT</sub> in ions-doped VO<sub class="a-plus-plus">2</sub> systems.</p></span><span class="a-plus-plus abstract-section id-a-sec2 outputmedium-online"><h3 class="a-plus-plus">Graphic </h3><p class="a-plus-plus">The <em class="a-plus-plus">d (logρ)/dT vs T</em> curves are plotted for Ge<sub class="a-plus-plus"><em class="a-plus-plus">x</em></sub>V<sub class="a-plus-plus"><em class="a-plus-plus">1−x</em></sub>O<sub class="a-plus-plus">2</sub> (0<em class="a-plus-plus">≤x</em>≤0.18) samples (a) un-doped VO<sub class="a-plus-plus">2</sub> ; (b) 2%; (c) 8%; (d) 18%, the transition temperatures upon heating, <em class="a-plus-plus">T</em><sub class="a-plus-plus"><em class="a-plus-plus">h</em></sub>, and cooling, <em class="a-plus-plus">T</em><sub class="a-plus-plus"><em class="a-plus-plus">c</em></sub>. The difference between <em class="a-plus-plus">T</em><sub class="a-plus-plus"><em class="a-plus-plus">h</em></sub> and <em class="a-plus-plus">T</em><sub class="a-plus-plus"><em class="a-plus-plus">c</em></sub> gives the hysteresis width, <em class="a-plus-plus">ΔT</em><sub class="a-plus-plus"><em class="a-plus-plus">t</em></sub>, while the <em class="a-plus-plus">FWHM</em> determines the sharpness of the semiconductor-to-metal transition</p></span>

materials science, multidisciplinary,metallurgy & metallurgical engineering