Abstract:The combination of density functional theory and single-site dynamical mean-field theory, using both Hartree and full continuous-time quantum Monte Carlo impurity solvers, is used to study the metal-insulator phase diagram of perovskite transition-metal oxides of the form $AB$O$_3$ with a rare-earth ion $A$=Sr, La, Y and transition metal $B$=Ti, V, Cr. The correlated subspace is constructed from atomiclike $d$ orbitals defined using maximally localized Wannier functions derived from the full $p$-$d$ manifold; for comparison, results obtained using a projector method are also given. Paramagnetic DFT+DMFT computations using full charge self-consistency along with the standard "fully localized limit" (FLL) double counting are shown to incorrectly predict that LaTiO$_3$, YTiO$_3$, LaVO$_3$ and SrMnO$_3$ are metals. A more general examination of the dependence of physical properties on the mean $p$-$d$ energy splitting, the occupancy of the correlated $d$ states, the double-counting correction, and the lattice structure demonstrates the importance of charge-transfer physics even in the early transition-metal oxides and elucidates the factors underlying the failure of the standard approximations. If the double counting is chosen to produce a $p$-$d$ splitting consistent with experimental spectra, single-site dynamical mean-field theory provides a reasonable account of the materials properties. The relation of the results to those obtained from "$d$-only" models in which the correlation problem is based on the frontier orbital $p$-$d$ antibonding bands is determined. It is found that if an effective interaction $U$ is properly chosen the $d$-only model provides a good account of the physics of the $d^1$ and $d^2$ materials.

Landau theory of metal-insulator transition in VO$_\text{2}$ doped with metal ions

Predicted Rebound Effects of Insulator-Metal Transition Temperature in Tungsten Doped VO2 Via First-Principles Method

Decoupling the Lattice Distortion and Charge Doping Effects on the Phase Transition Behavior of VO2 by Titanium (ti(4+)) Doping.

Electron-proton Co-doping Induced Metal-insulator Transition in VO2 Film via Surface Self-assembled Ascorbic Acid Molecules

Understanding the Nature of the Kinetic Process in a VO2 Metal-Insulator Transition.

Comprehensive studies of interfacial strain and oxygen vacancy on metal–insulator transition of VO<sub>2</sub>film

Electron–Proton Co‐doping‐Induced Metal–Insulator Transition in VO2 Film Via Surface Self‐Assembled L‐ascorbic Acid Molecules

Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film.

Metal-insulator transition in V 1-xW xO 2: Structural and electronic origin

Sequential Insulator-Metal-insulator Phase Transitions of V O 2 Triggered by Hydrogen Doping

Comprehensive Study of the Metal-Insulator Transition in Pulsed Laser Deposited Epitaxial VO2 Thin Films

Computation of the correlated metal-insulator transition in vanadium dioxide from first principles

Modulation of VO2 metal-insulator transition by co-doping of hydrogen and oxygen vacancy

Coupled electron-crystal lattice symmetry reduction in insulating materials with transition metal dopants: Cu-doped Pb$_{10}$(PO$_4$)$_6$O, and Vanadium doped SrTiO$_3$

Recent progress in the phase-transition mechanism and modulation of vanadium dioxide materials

Unraveling Metal-insulator Transition Mechanism of VO 2 Triggered by Tungsten Doping

Tuning Phase Transitions in Metal Oxides by Hydrogen Doping: A First-Principles Study

Variation of orbital symmetry of the localized 3d^1 electron of the V^{4+} ion upon the metal-insulator transition in VO_2

Density functional plus dynamical mean field theory of the metal-insulator transition in early transition metal oxides

Control of the Metal-Insulator Transition in VO₂ Epitaxial Film by Modifying Carrier Density.

Manipulations from oxygen partial pressure on the higher energy electronic transition and dielectric function of VO2 films during a metal–insulator transition process