Abstract:Vanadium dioxide is a strongly correlated material1,2,3,4 that undergoes a metal–insulator transition5 from a high-temperature, rutile metal to a monoclinic insulating state at 67 °C. In recent years, experiments on single-crystal vanadium-dioxide nanowires grown by physical vapour deposition6 have shed light on the crucial role of strain in the structural and electronic phase diagram of this material7,8,9,10, including evidence for a new M2 phase11,12, but the detailed physics of this material is still not fully understood. The transition temperature can be reduced by doping with tungsten8,13, but this process is not reversible. Here, we show that the metal–insulator transition in nanoscale beams of vanadium dioxide can be strongly modified by doping with atomic hydrogen14 using the catalytic spillover method15. We also show that this process is completely reversible, and that the metal–insulator transition eventually vanishes when the doping exceeds a threshold value. Raman and conventional optical microscopy, electron diffraction and transmission electron microscopy provide evidence that the structure of the metallic post-hydrogenation state is similar to that of the rutile state. First-principles electronic structure calculations confirm that a distorted rutile structure is energetically favoured following hydrogenation, and also that such doping favours metallicity from both the Mott and Peierls perspectives. We anticipate that hydrogen doping will be a powerful tool for examining the metal–insulator transition and for engineering the properties of vanadium dioxide.

Sequential Insulator-Metal-insulator Phase Transitions of V O 2 Triggered by Hydrogen Doping

Modulation of VO2 metal-insulator transition by co-doping of hydrogen and oxygen vacancy

Tuning Phase Transitions in Metal Oxides by Hydrogen Doping: A First-Principles Study

In situ diffraction study of catalytic hydrogenation of VO2: Stable phases and origins of metallicity

Electron-proton Co-doping Induced Metal-insulator Transition in VO2 Film via Surface Self-assembled Ascorbic Acid Molecules

Reversible modulation of metal–insulator transition in VO 2 via chemically induced oxygen migration

Electron–Proton Co‐doping‐Induced Metal–Insulator Transition in VO2 Film Via Surface Self‐Assembled L‐ascorbic Acid Molecules

Predicted Rebound Effects of Insulator-Metal Transition Temperature in Tungsten Doped VO2 Via First-Principles Method

Manipulating the insulator-metal transition through tip-induced hydrogenation

Revealing the role of high-valence elementary substitution in the hydrogen-induced Mottronic transitions of vanadium dioxide

Recent progress in the phase-transition mechanism and modulation of vanadium dioxide materials

Hydrogen stabilization of metallic vanadium dioxide in single-crystal nanobeams

Electric-field Control of Li-doping Induced Phase Transition in VO2 Film with Crystal Facet-Dependence

Control of the Metal-Insulator Transition in VO₂ Epitaxial Film by Modifying Carrier Density.

The Dynamic Phase Transition Modulation of Ion‐Liquid Gating VO2 Thin Film: Formation, Diffusion, and Recovery of Oxygen Vacancies

Subcycle insulator-to-metal transition in vanadium dioxide by terahertz-field-driven tunneling

Hidden magnetism and split off flat bands in the insulator metal transition in VO 2

Insight into Electronic and Structural Reorganizations for Defect-Induced Vo2 Metal-Insulator Transition

Structural and Electronic Phase Transitions in Ferromagnetic Monolayer Vs2 Induced by Charge Doping

Landau theory of metal-insulator transition in VO$_\text{2}$ doped with metal ions

Hydrogenating wafer-scale VO2 film in acid solution