Interfacial engineering eliminates energy loss at perovskite/HTL junction

Yingke Ren,Hongyang Fu,Yun Li,Zhaoqian Li,Cong Li,Xingtao An

DOI: https://doi.org/10.1039/d3cc05572h

IF: 4.9

2024-01-01

Chemical Communications

Abstract:Realizing efficient FAPbI 3 -based devices with high open-circuit voltage ( V OC ) is still challenging, due to severe energy loss between the n-type perovskite and p-type hole-transporting layer (HTL).

chemistry, multidisciplinary

What problem does this paper attempt to address?

A Facile Interface Engineering Method to Improve the Performance of FTO/ZnO/CsPbI 3− X Br X ( X < 1)/C Solar Cells

Fu Hao,Zhang Junsen,Li Yanhao,Gong Li,He Haiping,Fang Zhishan,Zhou Conghua,Chen Jianlin,Fan Jincheng

DOI: https://doi.org/10.1007/s10854-021-07563-1

2022-01-01

Journal of Materials Science Materials in Electronics

Abstract:Hole-transport-layer (HTL)-free, carbon-based all-inorganic perovskite solar cells (PSCs) are attracting a great interest owing to a low cost and an advanced stability in ambient environment. However, the photoelectric conversion efficiency (PCE) for this kind of PSCs was far lower than expected. Interface engineering is a promising method to enhance PSCs efficiency through improving the interface charge transfer. In our work, we introduce a simple, clean interfacial engineering method of deionized water (DI) spin-coating to treat the F-doped SnO2 (FTO). And then ZnO was spin-coated on the treated FTO. A compact and highly uniform ZnO film was obtained. Excess CsBr was added into CsPbI3 precursor solution to obtain stable black phase CsPbI3 at a low temperature (120 °C). HTL-free, carbon-based all-inorganic CsPbI3−xBrx (x < 1) perovskite solar cells are fabricated with the structure of FTO/DI/ZnO/CsPbI3−xBrx (x < 1)/C. After DI treatment, the defect density of device is greatly decreased so that carriers transport at the interface is accelerated and the charge recombination is effectively suppressed. The champion PCE has been improved from 10.95 to 12.39%, obtaining an improved PCE about 13%, which is the highest PCE for HTL-free, carbon-based all-inorganic PSCs until now.
Interfacial Engineering Enables High Efficiency with a High Open-Circuit Voltage above 1.23V in 2D Perovskite Solar Cells

Jiehuan Chen,Xiaomei Lian,Yingzhu Zhang,Weitao Yang,Jun Li,Minchao Qin,Xinhui Lu,Gang Wu,Hongzheng Chen

DOI: https://doi.org/10.1039/c8ta06925e

IF: 11.9

2018-01-01

Journal of Materials Chemistry A

Abstract:High efficiency (12.07%) 2D perovskite solar cells with a high open-circuit voltage above 1.23 V are realized via interface engineering.
Interface engineering for high-efficiency perovskite solar cells

Han Pan,Hui Shao,Xiao Li Zhang,Yan Shen,Mingkui Wang

DOI: https://doi.org/10.1063/5.0038073

IF: 2.877

2021-04-07

Journal of Applied Physics

Abstract:The power conversion efficiency of thin film solar cells using organic–inorganic hybrid lead halide perovskite as an absorber has achieved over 25%. An augment of the output voltage can further increase the efficiency approaching the Shockley–Queisser efficiency limitation, which is highly correlated with charge carrier management at interfaces in perovskite devices. This perspective presents some considerations to improve carrier transfer and reduce recombination loss for highly efficient perovskite solar cells, including primary requests on charge carrier transfer dynamics, reasonable design methodologies of interfacial materials, and tuning interface interaction between perovskite and charge transport layers.

physics, applied
Interfacial Passivation of the p-Doped Hole-Transporting Layer Using General Insulating Polymers for High-Performance Inverted Perovskite Solar Cells

Fan Zhang,Jun Song,Rui Hu,Yuren Xiang,Junjie He,Yuying Hao,Jiarong Lian,Bin Zhang,Pengju Zeng,Junle Qu

DOI: https://doi.org/10.1002/smll.201704007

IF: 13.3

Small

Abstract:Organic-inorganic lead halide perovskite solar cells (PVSCs), as a competing technology with traditional inorganic solar cells, have now realized a high power conversion efficiency (PCE) of 22.1%. In PVSCs, interfacial carrier recombination is one of the dominant energy-loss mechanisms, which also results in the simultaneous loss of potential efficiency. In this work, for planar inverted PVSCs, the carrier recombination is dominated by the dopant concentration in the p-doped hole transport layers (HTLs), since the F4-TCNQ dopant induces more charge traps and electronic transmission channels, thus leading to a decrease in open-circuit voltages (VOC ). This issue is efficiently overcome by inserting a thin insulating polymer layer (poly(methyl methacrylate) or polystyrene) as a passivation layer with an appropriate thickness, which allows for increases in the VOC without significantly sacrificing the fill factor. It is believed that the passivation layer attributes to the passivation of interfacial recombination and the suppression of current leakage at the perovskite/HTL interface. By manipulating this interfacial passivation technique, a high PCE of 20.3% is achieved without hysteresis. Consequently, this versatile interfacial passivation methodology is highly useful for further improving the performance of planar inverted PVSCs.
Reducing the Interfacial Energy Loss Via Oxide/perovskite Heterojunction Engineering for High Efficient and Stable Perovskite Solar Cells

Xing Guo,Xiangping Huang,Jie Su,Zhenhua Lin,Jing Ma,Jingjing Chang,Yue Hao

DOI: https://doi.org/10.1016/j.cej.2021.129184

IF: 15.1

2021-01-01

Chemical Engineering Journal

Abstract:Organic-inorganic perovskite solar cells (PSCs) have attracted much attentions due to their excellent photoelectric properties and low-cost fabrication. However, the performance of PSCs is seriously affected by the charge recombination at interface. Herein, we conducted a metal oxide/perovskite heterojunction engineering approach by utilizing a highly efficient LiF-doped SnO2 (SnO2:LiF)/perovskite interface. The theoretical and experimental results show that the LiF doping could modulate the lattice constant of SnO2, reduce the lattice mismatch between SnO2 and perovskite and hence reduce the trap states. Furthermore, LiF doping could enhance the conductivity of SnO2 ETL, improve the energy band alignment at interface, and enhance the charge transfer between SnO2 and perovskite. Consequently, the PSC based on SnO2:LiF/perovskite heterojunction achieves a high power conversion efficiency (PCE) of 21.33% with a V-oc of 1.13 V, a J(sc) of 24.00 mA/cm(2) and an FF of 0.78. Meanwhile, the devices exhibit improved stability under continuous AM 1.5G light illumination and high humidity conditions. Our work provides an oxide/perovskite heterojunction avenue to further increase the efficiency and stability of PSCs.
Heterointerface Energetics Regulation Strategy Enabled Efficient Perovskite Solar Cells

Yunfei Zhu,Zuolin Zhang,Xuefan Zhao,Mengjia Li,Yinsu Feng,Shuliang Zhang,Wenhuan Gao,Jiangzhao Chen,Jian‐Xin Tang,Cong Chen

DOI: https://doi.org/10.1002/aenm.202303946

IF: 27.8

2024-01-12

Advanced Energy Materials

Abstract:A heterointerface energetics regulation strategy by introducing potassium trifluoroacetate in the perovskite precursor solution to eliminate the trap defects and optimize surface potential and Fermi level, is proposed. Utilizing TOF‐SIMS, potassium is challenging to dope into the perovskite lattice but accumulates at both the upper surface and buried interface of the perovskite for reducing VOC losses of perovskite solar cells. In the domain of perovskite photovoltaics, the heterointerfaces are subject to substantial trap‐assisted non‐radiative recombination, predominantly attributed to the energy offset, interface defects, and the roughness of the contact. This phenomenon at the heterointerfaces, where carrier non‐radiative recombination and energy dissipation occur due to defects and suboptimal energy level alignment, can be principally held accountable for the Voc losses. Herein, a heterointerface energetics regulation (HER) strategy is proposed by introducing potassium trifluoroacetate (KTFA) in the perovskite precursor solution to eliminate the trap defects and optimize surface potential and Fermi level. It is first demonstrated that non‐doping K+ but precipitating at the upper and buried perovskite will improve energy‐level alignment for charge extraction dynamics. In addition, the TFA− exhibits strong electrostatic force with undercoordinated Pb2+ in the buried contact of perovskite and Sn4+ in the SnO2 electron transporting layer. Based on the vacuum flash evaporation green treatment without anti‐solvent, the Rb0.02(Cs0.05FA0.95)0.98PbI0.91Br0.03Cl0.06 and Cs0.05FA0.95PbI3 based device can achieve maximum efficiency of 23.36% and 24.48%, respectively. Further, the modified devices exhibit 92% initial efficiency output after 1200 h of aging. HER strategy for addressing interface defects and bandgap alignment are poised to advance both the performance and stability of perovskite solar cells.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Holistic Dielectric and Buffer Interfacial Layers Enable High-Efficiency Perovskite Solar Cells and Modules

Huan Li,Guanshui Xie,Jun Fang,Xin Wang,Sibo Li,Dongxu Lin,Daozeng Wang,Nuanshan Huang,Haichen Peng,Longbin Qiu

DOI: https://doi.org/10.1016/j.nanoen.2024.109507

IF: 17.6

2024-01-01

Nano Energy

Abstract:Suppressing the interfacial non-radiative recombination plays a critical role in reducing the voltage loss of perovskite solar cells. Herein, we develop a holistic interfacial regulation using dielectric materials of Al2O3 and PEABr/PMMA, and a buffer layer of compact SnOX to manipulate the multiple interfaces. A compact SnOX is inserted to reduce the charge accumulation at the interface of electron transport layer/Ag. Through this multiple interfacial design, the power conversion efficiency is greatly increased from 22.66% to 25.70% (certified 24.23%), mainly attributing to much enhancement in open circuit voltage and fill factor. The fill factor of 86.41% is the highest among the self-assembled-monolayers-based inverted devices. Both perovskite film and resulting device show increased thermal stability due to the incorporation of compact SnOX, which inhibits the escape of volatile species from perovskite, infiltration of moisture and the suppression of ion migration. Scaling up this strategy delivers an efficiency for a minimodule as high as 21.56%. More importantly, we discovered that the PEABr passivation could induce the collapse of morphology under continuous illumination, thus leading to worse operational stability. This work provides a path towards omnibearing modification for minimizing the trap-assisted recombination at the interface through the synergetic effects of dielectric materials.
Interfacial Control Toward Efficient and Low-Voltage Perovskite Light-Emitting Diodes

Jianpu Wang,Nana Wang,Yizheng Jin,Junjie Si,Zhi‐Kuang Tan,Hui Du,Lu Cheng,Xingliang Dai,Sai Bai,Haiping He,Zhizhen Ye,May Ling Lai,Richard H. Friend,Wei Huang,Zhi-Kuang Tan

DOI: https://doi.org/10.1002/adma.201405217

IF: 29.4

2015-02-23

Advanced Materials

Abstract:High-performance perovskite light-emitting diodes are achieved by an interfacial engineering approach, leading to the most efficient near-infrared devices produced using solution-processed emitters and efficient green devices at high brightness conditions.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Minimizing Interfacial Energy Losses in Inverted Perovskite Solar Cells by a Dipolar Stereochemical 2D Perovskite Interface

Junjie Qian,Jingjing He,Qihang Zhang,Chenyue Zhu,Shilin Chen,Zhanpeng Wei,Xuesong Leng,Ziren Zhou,Benben Shen,Yu Peng,Qiang Niu,Shuang Yang,Yu Hou

DOI: https://doi.org/10.1016/j.jechem.2023.11.039

IF: 13.1

2024-01-01

Journal of Energy Chemistry

Abstract:Inverted perovskite solar cells (PSCs) have attracted broad research and industrial interest owing to their suppressed hysteresis, cost-effectiveness, and easy-fabrication. However, the issue of non-radiative recombination losses at the n-type interface between the perovskite and fullerene has impeded further improvement of photovoltaic performance. Here, we modify the n-type interface of FAPbI3 perovskite films by constructing a stereochemical two-dimensional (2D) perovskite interlayer, in which the organic cations comprise both pyridine and ammonium groups. The pyridine N donor can create stable bonding with the surface-uncoordinated Pb on the perovskite, thereby passivating the shallow-level defects and enhancing the air stability of the film. Furthermore, the pyridine N donor also offers a positive polar interface to decrease the surface work function of the perovskite film, enabling n-type modification. Ultimately, we employ a p-i-n photovoltaic (PV) device with the positive dipole interlayer at perovskite/fullerene contact and achieve remarkable photoelectric conversion efficiency (PCE) of 22.0%.
Interfacial Toughening for High-efficiency Perovskite Solar Modules

Li Tao,Yuanqiang Huang,Bin Ding,Haoran Wang,Jiahao Tang,Song Zhang,Jun Zhang,Mohammad Khaja Nazeeruddin,Hao Wang

DOI: https://doi.org/10.1016/j.mtener.2024.101611

IF: 9.257

2024-06-01

Materials Today Energy

Abstract:The distinctive benefits of perovskite solar cells, such as their lightweight nature, high flexibility, and ease of deformation, have garnered significant interest. These characteristics make them well-suited for use in portable electronic devices. Nevertheless, a large efficiency gap still exists between laboratory-based small cells and industrial oriented large-scale modules. One of the primary reasons for the efficiency losses is the limited adhesion at the brittle interface between the perovskite layer and hole transport layer. Herein, potassium acetate is selected to tailor the interface of perovskite/hole transport layer. The presence of potassium acetate between the perovskite layer and hole transport layer has the potential to enhance the p-type perovskite interface. And the strengthen of the interface contact could be verified by the utilization of KPFM and DFT calculations. As results, the charge separation is accelerated associated with the substantial enhancement in V oc from 1.118 V to 1.139 V. And the power conversion efficiency of the solar cell has been enhanced, resulting in an increase from 23.76% to 24.81%. Additionally, the perovskite solar module exhibits little loss, with an efficiency of 21.13% with an aperture area of 29.0 cm 2 .

materials science, multidisciplinary,chemistry, physical,energy & fuels
Improving the performance of perovskite solar cells using a dual-hole transport layer

Chenghao Song,Huiwei Du,Menglei Xu,Jie Yang,Xinyu Zhang,Jungan Wang,Yuanfang Zhang,Chengjun Gu,Rui Li,Tao Hong,Jingji Zhang,Jiangying Wang,Yongchun Ye

DOI: https://doi.org/10.1039/d3dt03501h

IF: 4

2023-11-30

Dalton Transactions

Abstract:The energy loss (Eloss) caused by inefficient charge transfer and large energy level offset at the buried interface is extremely easy to restrict the performance of p-i-n perovskite solar cells (PVSCs). In this study, the utilization of Poly-TPD and P3CT-N as a dual-hole transporting layer (HTL) was implemented in a sequential manner. This approach aimed to improve the charge transfer efficiency of the HTL and mitigate charge recombination at the interface between the HTL and PVK. The results show that this strategy also could achieve more suitable energy levels, improve the quality of the perovskite film layer, and ultimately enhance the device's stability. The IPVSCs employing the dual-HTLs approach exhibited the highest power conversion efficiency of 19.85%, and the open-circuit voltage increased to 1.09 V from 1.00 V. This research offers a straightforward and efficient approach to boost device performance by minimizing Eloss and reducing buried interfacial defects. The findings underscore the potential of employing a dual-HTLs strategy as a promising pathway for further advancements in PVSCs.

chemistry, inorganic & nuclear
Perovskite Bifunctional Device with Improved Electroluminescent and Photovoltaic Performance Through Interfacial Energy-Band Engineering

Jiangsheng Xie,Pengjie Hang,Han Wang,Shenghe Zhao,Ge Li,Yanjun Fang,Feng Liu,Xinlu Guo,Hepeng Zhu,Xinhui Lu,Xuegong Yu,Christopher C. S. Chan,Kam Sing Wong,Deren Yang,Jianbin Xu,Keyou Yan

DOI: https://doi.org/10.1002/adma.201902543

IF: 29.4

2019-01-01

Advanced Materials

Abstract:Currently, photovoltaic/electroluminescent (PV/EL) perovskite bifunctional devices (PBDs) exhibit poor performance due to defects and interfacial misalignment of the energy band. Interfacial energy-band engineering between the perovskite and hole-transport layer (HTL) is introduced to reduce energy loss, through adding corrosion-free 3,3 '-(2,7-dibromo-9H-fluorene-9,9-diyl) bis(n,n-dimethylpropan-1-amine) (FN-Br) into a HTL free of lithium salt. This strategy can turn the n-type surface of perovskite into p-type and thus correct the misalignment to form a well-defined N-I-P heterojunction. The tailored PBD achieves a high PV efficiency of up to 21.54% (certified 20.24%) and 4.3% EL external quantum efficiency. Free of destructive additives, the unencapsulated devices maintain >92% of their initial PV performance for 500 h at maximum power point under standard air mass 1.5G illumination. This strategy can serve as a general guideline to enhance PV and EL performance of perovskite devices while ensuring excellent stability.
Insight into the Interface Engineering of a SnO2/FAPbI3 Perovskite Using Lead Halide As an Interlayer: A First-Principles Study.

Yunfei Wang,Xinyi Mei,Junming Qiu,Qisen Zhou,Donglin Jia,Mei Yu,Jianhua Liu,Xiaoliang Zhang

DOI: https://doi.org/10.1021/acs.jpclett.1c03213

2021-01-01

Abstract:The interfacial properties of the perovskite photovoltaic layer and electron transport layer (ETL) are critical to minimize energy losses of perovskite solar cells (PSCs) induced by interfacial recombination. Herein, the interface engineering of the SnO2/FAPbI3 perovskite using PbX2 (X = Cl, Br, or I) as an interlayer is extensively studied using first-principles calculations. The results reveal that the thickness of the PbI2 interlayer needs to be finely controlled, which may limit charge transport if there is a large amount of PbI2 precipitation at the interface. The high lattice mismatch of the PbBr2 with the SnO2/FAPbI3 interface makes PbBr2 an unfavorable passivation material. Due to the strong coupling of the PbCl2 with both SnO2 and FAPbI3, an efficient electron transport pathway could be built after applying PbCl2 as an interlayer. Meanwhile, the PbCl2 interlayer could also effectively passivate interface defects, therefore lowering the energy losses of PSCs.
Design of Homojunction Perovskite Solar-Cell Devices Without Hole-Transport Layer

Huang, Kai,Wu, Jiang

DOI: https://doi.org/10.1007/s11814-024-00304-0

IF: 2.7

2024-11-05

Korean Journal of Chemical Engineering

Abstract:Perovskite solar cells (PSCs) that lack a hole transport layer (HTL) attract considerable interest because of their straightforward design. This study utilizes the inherent self-doping properties of perovskite to propose a novel homojunction design combining n-FASnI 3 and p-FASnI 3 for efficient HTL-free PSCs. The internal factors affecting the device, such as defect density, electron affinity, bandgap, and doping concentration, are investigated using the solar-cell capacitance simulator (SCAPS-1D). An interfacial defect layer (IDL) is introduced between n-FASnI 3 and TiO 2 to mitigate recombination at interfaces, with related parameters also optimized. Furthermore, the influence of various metal electrodes on PSC performance is examined. Ultimately, the cell achieves an optimized power-conversion efficiency of 30.52%. These findings highlight the bright prospects of homojunction-based HTL-free PSCs. They simplify device structure and production processes while preserving high efficiency. This research lays the groundwork for future industrial applications of HTL-free PSCs in the field of photovoltaics.

engineering, chemical,chemistry, multidisciplinary
Recent Advancements in Enhancing Interfacial Charge Transport for Perovskite Solar Cells

Venkata Seshaiah Katta,Muhammad Waheed,Joo Hyun Kim

DOI: https://doi.org/10.1002/solr.202300908

IF: 9.1726

2024-02-02

Solar RRL

Abstract:Finding the most suitable pathways to improve the interfacial charge transportation in Lead halide perovskite solar cells is a highly desirable research area, to enhance device performance and enable commercialization. The complexities of interfacial charge dynamics, encompassing separation, diffusion, and collection processes, pivot on the thoughtful selection of interlayers and their inherent properties. Challenges arise from non‐ideal interfaces characterized by mismatched energy levels and defects that hinder efficient charge transport. To address these concerns, implementing tailored interfacial engineering strategies, including interlayer modification, band alignments, and passivation techniques, can help mitigate unwanted non‐radiative recombination. This review aims to elucidate the impact of trap states on suppressing charge transport in the device, along with subsequent passivation techniques designed to enhance interfacial charge transport. Following that, a comprehensive overview is presented, highlighting recent advancements in interface engineering techniques that improve interfacial properties between the ETL/perovskite and perovskite/HTL. Significantly, the impact of using buffer layers and dipole layers as interlayers on overall device performance and stability is investigated. This article is protected by copyright. All rights reserved.

energy & fuels,materials science, multidisciplinary
Minimizing Interfacial Energy Loss and Volatilization of Formamidinium via Polymer‐Assisted D–A supramolecular Self‐Assembly Interface for Inverted Perovskite Solar Cells with 25.78% Efficiency

Congcong Tian,Anxin Sun,Rongshan Zhuang,Yiting Zheng,Xueyun Wu,Beilin Ouyang,Jiajun Du,Ziyi Li,Xiling Wu,Jinling Chen,Jingyu Cai,Yong Hua,Chun‐Chao Chen

DOI: https://doi.org/10.1002/adma.202404797

IF: 29.4

2024-07-20

Advanced Materials

Abstract:A polymer‐assisted 5FTPP/PCBM supramolecular donor‐acceptor (D–A) interface self‐assembly strategy can minimize interfacial energy losses by addressing thermalization, conduction band offset, and nonradiative recombination, while inhibiting the adverse effect of FA+ volatilization under thermal stress by multidentate anchoring. 2D perovskite passivation strategies effectively reduce defect‐assisted carrier nonradiative recombination losses on the perovskite surface. Nonetheless, severe energy losses are causing by carrier thermalization, interfacial nonradiative recombination, and conduction band offset still persist at heterojunction perovskite/PCBM interfaces, which limits further performance enhancement of inverted heterojunction PSCs. Here, 5,10,15,20‐tetrakis(pentafluorophenyl)porphyrin (5FTPP) is introduced between 3D/2D perovskite heterojunction and PCBM. Compared to tetraphenylporphyrin without electron‐withdrawing fluoro‐substituents, 5FTPP can self‐assemble with PCBM at interface into donor–acceptor (D–A) complex with stronger supramolecular interaction and lower energy transfer losses. This rapid energy transfer from donor (5FTPP) to acceptor (PCBM) within femtosecond scale is demonstrated to enlarge hot carrier extraction rates and ranges, reducing thermalization losses. Furthermore, the incorporation of polystyrene derivative (PD) reinforces D–A interaction by inhibiting self‐π–π stacking of 5FTPP, while fine‐tuning conduction band offset and suppressing interfacial nonradiative recombination via Schottky barrier, dipole, and n‐doping. Notably, the multidentate anchoring of PD‐5FTPP with FA+, Pb2+, and I− mitigates the adverse effects of FA+ volatilization during thermal stress. Ultimately, devices with PD‐5FTPP achieve a power conversion efficiency of 25.78% (certified: 25.36%), maintaining over 90% of initial efficiency after 1000 h of continuous illumination at the maximum power point (65 °C) under ISOS‐L‐2 protocol.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Interfacial Passivation Engineering for Highly Efficient Perovskite Solar Cells with a Fill Factor over 83

Xiaofei Ji,Kui Feng,Suxiang Ma,Junwei Wang,Qiaogan Liao,Zhaojin Wang,Bolin Li,Jiachen Huang,Huiliang Sun,Kai Wang,Xugang Guo

DOI: https://doi.org/10.1021/acsnano.2c01547

IF: 17.1

2022-07-23

ACS Nano

Abstract:Charge carrier nonradiative recombination (NRR) caused by interface defects and nonoptimal energy level alignment is the primary factor restricting the performance improvement of perovskite solar cells (PSCs). Interfacial modification is a vital strategy to restrain NRR and enable high-performance PSCs. We report here two interfacial materials, PhI-TPA and BTZI-TPA, consisting of phthalimide and a 2,1,3-benzothiadiazole-5,6-dicarboxylicimide core, respectively. The difunctionalized BTZI-TPA with...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Minimized Energy Loss at the Buried Interface of p‐i‐n Perovskite Solar Cells via Accelerating Charge Transfer and Forming p–n Homojunction

Jiankai Zhang,Bo Yu,Yapeng Sun,Huangzhong Yu

DOI: https://doi.org/10.1002/aenm.202300382

IF: 27.8

2023-04-09

Advanced Energy Materials

Abstract:A BF4− anion–assisted molecular doping (AMD) strategy is proposed to enhance the doping level of both poly[bis(4‐phenyl) (2,4,6‐trimethylphenyl) amine] and poly[N,N′‐bis(4‐butilphenyl)‐N,N′‐bis(phenyl)‐benzidine] films and induce the formation of p–n homojunctions in the perovskite film, which results in a highest power conversion efficiency of 24.26% due to the reduced energy loss at the buried interface. The energy loss (Eloss) aroused by inefficient charge transfer and large energy level offset at the buried interface of p‐i‐n perovskite solar cells (PVSCs) limits their development. In this work, a BF4− anion‐assisted molecular doping (AMD) strategy is first proposed to improve the charge transfer capability of hole transport layers (HTLs) and reduce the energy level offset at the buried interface of PVSCs. The AMD strategy improves the carrier mobility and density of poly[bis(4‐phenyl) (2,4,6‐trimethylphenyl) amine] (PTAA) and poly[N,N′‐bis(4‐butilphenyl)‐N,N′‐bis(phenyl)‐benzidine] (Poly‐TPD) HTLs while lowering their Fermi levels. Meanwhile, BF4− anions regulate the crystallization and reduce donor‐type iodine vacancies, resulting in the energetics transformation from n‐type to p‐type on the bottom surface of perovskite film. The faster charge transfer and formed p–n homojunction reduce charge recombination and Eloss at the HTL/perovskite buried interface. The PVSCs utilizing AMD treated PTAA and Poly‐TPD as HTLs demonstrate a highest power conversion efficiency (PCE) of 24.26% and 22.65%, along with retaining 90.97% and 85.95% of the initial PCE after maximum power point tracking for 400 h. This work provides an effective way to minimize the Eloss at the buried interface of p‐i‐n PVSCs by accelerating charge transfer and forming p–n homojunctions.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Front electric-field enabling highly efficient perovskite photovoltaics

Jing Chen,Yan-Hui Lou,Kai-Li Wang,Di Xue,Guang-Peng Zhu,Chun-Hao Chen,Yu-Han Li,Tao Wang,Li-Zhen Huang,Zhao-Kui Wang,Liang-Sheng Liao

DOI: https://doi.org/10.1016/j.nanoen.2023.108692

IF: 17.6

2023-07-14

Nano Energy

Abstract:The efficient carrier extraction and transport will be greatly aided by a proper heterojunction that has formed at the interface of perovskite photovoltaics. For n-i-p devices, the film quality of perovskites is further influenced by the characteristics of the interface between the electron transport layer (ETL) and perovskite layer. Herein, we introduce a "front surface field" based on the concept of back surface field (BSF) technique into perovskite photovoltaics. We optimize the energy band arrangement for devices by adding a potent n-type molecular buffer layer (naphthalene, 2,6-naphthalene dicarboxylic acid (2,6-NDA)) at the interface between the ETL and the perovskite layer. The generated electric filed at the interface results in more perfect interface contact and efficiently inhibits interface charge recombination, producing a high open-circuit voltage. The 2,6-NDA-treated device delivered a power conversion efficiency up to 24.19% by a reduce of the open-circuit voltage loss with 370 mV. The finding in this work provides a new route to optimize the device architectures for highly efficient perovskite photovoltaics.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
The Energy‐Alignment Engineering in Polytriphenylamines‐Based Hole Transport Polymers Realizes Low Energy Loss and High Efficiency for All‐Inorganic Perovskite Solar Cells

Bin Zhang,Yingzhi Zhou,Qifan Xue,Jingjing Tian,Qin Yao,Yue Zang,Lei Wang,Wei Yang,Hin-Lap Yip,Yong Cao

DOI: https://doi.org/10.1002/solr.201900265

IF: 9.1726

2019-01-01

Solar RRL

Abstract:The energy loss (Eloss) control via interfacial engineering is a significant indispensible methodology to realize high‐performance all‐inorganic perovskite solar cells (PVSCs). Herein, three novel polytriphenylamine‐based polymer derivatives (H‐Z1, H‐Z2, and H‐Z3) are synthesized, and the energy levels of these polymers are tuned feasibly through introducing the electron‐withdrawing group of trifluoromethyl in the triphenylamine (TPA) unit. These very deep HOMO energy levels are very beneficial for improving the open‐circuit voltages (Vocs) in PVSCs with the potentially decreased Elosss. Due to the gradual deepening of HOMO energy levels from H‐Z1, H‐Z2 to H‐Z3, the Vocs are elevated from 1.23, 1.28 to 1.30 V, respectively, where the Elosss are decreased from 0.69, 0.64, to 0.62 eV for H‐Z1, H‐Z2, and H‐Z3, respectively. Interestingly, both of the H‐Z1‐ and H‐Z2‐based devices show the highest PCEs, over 14%, in all‐inorganic PVSCs, which are effectively comparable to the results of reference device using Spiro‐OMeTAD as HTL. Thus, through the efficient atomic engineering and chemical modification in corresponding p‐typed polymers, excellent hole transport polymers are achieved for high‐performance and stable PVSCs with very low Eloss.

Interfacial engineering eliminates energy loss at perovskite/HTL junction

A Facile Interface Engineering Method to Improve the Performance of FTO/ZnO/CsPbI 3− X Br X ( X < 1)/C Solar Cells

Interfacial Engineering Enables High Efficiency with a High Open-Circuit Voltage above 1.23V in 2D Perovskite Solar Cells

Interface engineering for high-efficiency perovskite solar cells

Interfacial Passivation of the p-Doped Hole-Transporting Layer Using General Insulating Polymers for High-Performance Inverted Perovskite Solar Cells

Reducing the Interfacial Energy Loss Via Oxide/perovskite Heterojunction Engineering for High Efficient and Stable Perovskite Solar Cells

Heterointerface Energetics Regulation Strategy Enabled Efficient Perovskite Solar Cells

Holistic Dielectric and Buffer Interfacial Layers Enable High-Efficiency Perovskite Solar Cells and Modules

Interfacial Control Toward Efficient and Low-Voltage Perovskite Light-Emitting Diodes

Minimizing Interfacial Energy Losses in Inverted Perovskite Solar Cells by a Dipolar Stereochemical 2D Perovskite Interface

Interfacial Toughening for High-efficiency Perovskite Solar Modules

Improving the performance of perovskite solar cells using a dual-hole transport layer

Perovskite Bifunctional Device with Improved Electroluminescent and Photovoltaic Performance Through Interfacial Energy-Band Engineering

Insight into the Interface Engineering of a SnO2/FAPbI3 Perovskite Using Lead Halide As an Interlayer: A First-Principles Study.

Design of Homojunction Perovskite Solar-Cell Devices Without Hole-Transport Layer

Recent Advancements in Enhancing Interfacial Charge Transport for Perovskite Solar Cells

Minimizing Interfacial Energy Loss and Volatilization of Formamidinium via Polymer‐Assisted D–A supramolecular Self‐Assembly Interface for Inverted Perovskite Solar Cells with 25.78% Efficiency

Interfacial Passivation Engineering for Highly Efficient Perovskite Solar Cells with a Fill Factor over 83

Minimized Energy Loss at the Buried Interface of p‐i‐n Perovskite Solar Cells via Accelerating Charge Transfer and Forming p–n Homojunction

Front electric-field enabling highly efficient perovskite photovoltaics

The Energy‐Alignment Engineering in Polytriphenylamines‐Based Hole Transport Polymers Realizes Low Energy Loss and High Efficiency for All‐Inorganic Perovskite Solar Cells