Abstract:Modern nanotechnology offers routes to create new artificial materials, widening the functionality of devices in physics, chemistry, and biology. Templated self-organization has been recognized as a possible route to achieve exact positioning of quantum dots to create quantum dot arrays, molecules, and crystals. Here we employ extreme ultraviolet interference lithography (EUV-IL) at a wavelength of lambda = 13.5 nm for fast, large-area exposure of templates with perfect periodicity. Si(001) substrates have been patterned with two-dimensional hole arrays using EUV-IL and reactive ion etching. On these substrates, three-dimensionally ordered SiGe quantum dot crystals with the so far smallest quantum dot sizes and periods both in lateral and vertical directions have been grown by molecular beam epitaxy. X-ray diffractometry from a sample volume corresponding to about 3.6 x 10(7) dots and atomic force microscopy (AFM) reveal an up to now unmatched structural perfection of the quantum dot crystal and a narrow quantum dot size distribution. Intense interband photoluminescence has been observed up to room temperature, indicating a low defect density in the three-dimensional (3D) SiGe quantum dot crystals. Using the Ge concentration and dot shapes determined by X-ray and AFM measurements as input parameters for 3D band structure calculations, an excellent quantitative agreement between measured and calculated PL energies is obtained. The calculations show that the band structure of the 3D ordered quantum dot crystal is significantly modified by the artificial periodicity. A calculation of the variation of the eigenenergies based on the statistical variation in the dot dimensions as determined experimentally (+/-10% in linear dimensions) shows that the calculated electronic coupling between neighboring dots is not destroyed due to the quantum dot size variations. Thus, not only from a structural point of view but also with respect to the band structure, the 3D ordered quantum dots can be regarded as artificial crystal.

Three-Dimensional Reconstruction of Interface Roughness and Alloy Disorder in Ge/GeSi Asymmetric Coupled Quantum Wells Using Electron Tomography

Surfaces and Interfaces of Group IV Semiconductors

Utilizing multimodal microscopy to reconstruct Si/SiGe interfacial atomic disorder and infer its impacts on qubit variability

Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy

Atomic Order in Non-Equilibrium Silicon-Germanium-Tin Semiconductors

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Electron Tomography of Au-Catalyzed Semiconductor Nanowires

High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures

3D Shape Reconstruction of Ge Nanowires during Vapor-Liquid-Solid Growth under Modulating Electric Field

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

High quality Ge layers for Ge/SiGe quantum well heterostructures using chemical vapor deposition

Electronic structure of the Ge/Si(105) hetero-interface

Real-space observation of a two-dimensional electron gas at semiconductor heterointerfaces

Electrochemical Impedance Spectroscopy for Quantitative Interface State Characterization of Planar and Nanostructured Semiconductor-Dielectric Interfaces

Ab initio and nuclear inelastic scattering studies of Fe$_3$Si/GaAs heterostructures

Germanium wafers for strained quantum wells with low disorder

Nanoimaging of Electronic Heterogeneity in Bi2Se3 and Sb2Te3 Nanocrystals

Atomic‐scale Strain Analysis for Advanced Si/SiGe Heterostructure by Using Transmission Electron Microscopy

Correlating grain boundary character and composition in 3-dimensions using 4D-scanning precession electron diffraction and atom probe tomography

Three-dimensional Si/Ge quantum dot crystals

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction