Abstract:The semiconductor–metal transition (SMT) enables multiple applications of one single material, especially in modern devices. How to control it remains one of the most intriguing questions in material physics/chemistry, especially in two-dimensional layered materials. In this work, we report realization of SMT in MoS2–xOx bilayers, driven by the concentration gradient of the chalcogen atom across the van der Waals (vdW) gap of the disordered bilayers. Using the cluster expansion method, we determined that either semiconducting (stable) or metallic states (metastable) can be realized in MoS2–xOx bilayers with the same composition. Machine learning analysis revealed that the concentration gradient of the chalcogen atom across the vdW gap is the leading fingerprint of SMT, with structural distortion induced by atom mixing being a significant secondary factor. The electronic origin of the SMT is the broadening of the Mo dz2 and O pz bands, accompanied by the redistribution of the d electrons. This in-vdW-gap composition-gradient-driven SMT phenomenon also applies to MoSe2–xOx and MoTe2–xOx bilayers. The present work provides an alternative mechanism of SMT and demonstrates that the composition gradient across the vdW gap in the bilayer materials can be another degree of freedom to tune the band gaps without introducing extrinsic elements. Our findings will benefit the material design for small-scale and energy-efficient electronic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c13104?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c13104</a>.Formation energy of bilayer MoS2–xOx; phonon dispersion; DOS obtained by HSE; features in machine learning; and LDOS, COHP profile (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c13104/suppl_file/am0c13104_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Spectroscopic ellipsometry to characterize the Transition-Metal dichalcogenides single crystals doping concentration

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

Spectral ellipsometry of monolayer transition metal dichalcogenides: Analysis of excitonic peaks in dispersion

Controlled Doping Engineering in 2D MoS 2 Crystals toward Performance Augmentation of Optoelectronic Devices

Bridging Synthesis and Controllable Doping of Monolayer 4 In. Length Transition-Metal Dichalcogenides Single Crystals with High Electron Mobility

Composition-Gradient-Mediated Semiconductor–Metal Transition in Ternary Transition-Metal-Dichalcogenide Bilayers

Understanding Iron-Doping Modulating Domain Orientation and Improving the Device Performance of Monolayer Molybdenum Disulfide

Improving the Luminescence Performance of Monolayer MoS2 by Doping Multiple Metal Elements with CVT Method

Spatially precise light-activated dedoping in wafer-scale MoS2 films

Magnetism and Electronic Phase Transitions in Monoclinic Transition Metal Dichalcogenides with Transition Metal Atoms Embedded

Controllable Doping Characteristics for WSxSey Monolayers Based on the Tunable S/Se Ratio.

Facile Doping in Two-Dimensional Transition-Metal Dichalcogenides by UV Light.

Nano-spectroscopy of excitons in atomically thin transition metal dichalcogenides

Insight into the Growth of Non-uniform Vanadium-Doped Molybdenum Disulfide for Tunable Electronic Properties

Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

Optical spectroscopic detection of Schottky barrier height at a two-dimensional transition-metal dichalcogenide/metal interface

Computational design of the novel Fe-doped single-layer SrS: structural, electro-magnetic, and optical properties

Revealing Electronic Nature of Broad Bound Exciton Bands in Two-Dimensional Semiconducting WS2 and MoS2

Doped, Two-Dimensional, Semiconducting Transition Metal Dichalcogenides in Low-Concentration Regime

Tuning the magnetic properties of doped ZnS using transition metal doping: A multi-scale computational approach