Abstract:In this study, we investigate excitonic properties of epitaxially grown WS2, which is of particular interest for various applications due to its potential for upscaling to wafer sized structures. Understanding the effect of the dielectric environment due to changing layer numbers and multi-material heterostructures on the optical properties is crucial for tailoring device properties. Monochromated electron energy loss spectroscopy in a scanning transmission electron microscope is employed to characterize the excitonic spectrum of WS2 on graphene grown by metal organic chemical vapor deposition. This technique provides the required spatial resolution at the nanometer scale in combination with high quality spectra. To complement the experimental results, theoretical investigations using density functional theory and applying the Bethe-Salpeter equations are conducted. We find that by transitioning from mono- to bi- to multilayers of WS2 the spectra show redshifts for both, the K-valley excitons at about 2.0 and 2.4 eV as well as excitonic features of higher energies. The latter features originate from so called band nesting of transitions between the Gamma- and K-point. In summary, this study provides valuable insights into the excitonic properties of WS2 in different layer configurations and environments, which are realistically needed for future device fabrication and property tuning. Finally, we can show that nanometer scale electron spectroscopy supported by careful theoretical modelling can successfully link atomic structure and optical properties, such as exciton shifts, in non-idealized complex material systems like multilayer 2D heterostructures.

Spectral ellipsometry of monolayer transition metal dichalcogenides: Analysis of excitonic peaks in dispersion

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Spectroscopic Ellipsometry Study of the Temperature Dependences of the Optical and Exciton Properties of MoS2 and WS2 Monolayers

Electronic band gaps and exciton binding energies in monolayer M o x W 1 − x S 2 transition metal dichalcogenide alloys probed by scanning tunneling and optical spectroscopy

In-plane Propagation of Light in Transition Metal Dichalcogenide Monolayers: Optical Selection Rules

Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

Temperature-dependent optical constants of monolayer $${\text {MoS}}_2$$, $${\text {MoSe}}_2$$, $${\text {WS}}_2$$, and $${\text {WSe}}_2$$: spectroscopic ellipsometry and first-principles calculations

Imaging Spectroscopic Ellipsometry of Mono- and Few-layer MoS2

Broadband optical properties of monolayer and bulk MoS2

Direct Determination of Monolayer MoS2 and WSe2 Exciton Binding Energies on Insulating and Metallic Substrates

Excitonic resonances in thin films of WSe2: From monolayer to bulk material

Exciton band structure of molybdenum disulfide: from monolayer to bulk

Optical Emission from Light-like and Particle-like Excitons in Monolayer Transition Metal Dichalcogenides

Direct Measurement of Biexcitons in Monolayer WS2

Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study

Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor.

Many-body effect in optical properties of monolayer molybdenum diselenide

Spectroscopic ellipsometry to characterize the Transition-Metal dichalcogenides single crystals doping concentration

Photoinduced Bandgap Renormalization and Exciton Binding Energy Reduction in WS2.

Excited States of Excitons in MoSe2 and WSe2 Monolayers

Optical absorption of interlayer excitons in transition-metal dichalcogenide heterostructures