Toward an Open Digital Tutorial for Ancient Greek v. 2.0

Jeffrey A. Rydberg-Cox

Abstract:

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First-principles study of magnetic and optical properties in dopant-doped two-dimensional SnS2

Long Lin,Yujin Chen,Lixin Li,Housheng Jia,Ruixin Chen,Hualong Tao

DOI: https://doi.org/10.1016/j.jmmm.2022.169303

IF: 3.097

2022-08-01

Journal of Magnetism and Magnetic Materials

Abstract:We use GGA and GGA + U methods to calculate the magnetic and optical properties of pure, Fe doped, Mn doped, (Fe, Mn) co-doped and (Fe, Mn, VSn) co-doped SnS2 based on first principles. The results show that both Fe doping and Mn doping have spin polarization. The most stable (0, 3) configuration of (Fe, Mn) co-doped SnS2 exhibits magnetism, which mainly comes from the magnetic coupling between Fe-3d state, Mn-3d state and the nearest neighbor S-3p state of doped atoms. The most stable (0, 3, 1) configuration in (Fe, Mn, VSn) co-doped SnS2 also exhibits magnetism, which comes from the magnetic coupling between Fe-3d state, Mn-3d state and the nearest neighbor S-3p state of doped atoms. We also find that the introduction of doping atoms enhances the electromagnetic absorption capacity of the ɛ1(ω) of the dielectric function and increases the electrical conductivity. Mn doped and (Fe, Mn) co-doped SnS2 have low transmittance properties in visible and ultraviolet light ranges, while Fe doped and (Fe, Mn, VSn) co-doped SnS2 have high transmittance properties in visible and ultraviolet light ranges. Our findings indicate that Fe doped, Mn doped, (Fe, Mn) co-doped and (Fe, Mn, VSn) co-doped SnS2 systems have potential applications in spin semiconductors and optoelectronic devices.

materials science, multidisciplinary,physics, condensed matter
A two-dimensional Fe-doped SnS2 magnetic semiconductor

Bo Li,Tao Xing,Mianzeng Zhong,Le Huang,Na Lei,Jun Zhang,Jingbo Li,Zhongming Wei

DOI: https://doi.org/10.1038/s41467-017-02077-z

IF: 16.6

2017-12-01

Nature Communications

Abstract:Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS2 monolayer exfoliated using a micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and the Fe contents are ∼2.1%, 1.5%, and 1.1%. The field-effect transistors based on the Fe0.021Sn0.979S2 monolayer show n-type behavior and exhibit high optoelectronic performance. Magnetic measurements show that pure SnS2 is diamagnetic, whereas Fe0.021Sn0.979S2 exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ~31 K. Density functional theory calculations show that long-range ferromagnetic ordering in the Fe-doped SnS2 monolayer is energetically stable, and the estimated Curie temperature agrees well with the results of our experiment. The results suggest that Fe-doped SnS2 has significant potential in future nanoelectronic, magnetic, and optoelectronic applications.

multidisciplinary sciences
Ferromagnetism of Ni and I Co-Doped CdS: A First-Principles Study

Muhammad Yar Khan,Miaogen Chen,Shengdan Tao,Qing Liao,Asif Ilyas,Jing Zhang,Haifei Wu,Yunhao Lu

DOI: https://doi.org/10.1016/j.physleta.2023.128971

IF: 2.707

2023-01-01

Physics Letters A

Abstract:This study provides insight into understanding the electronic and magnetic properties of Ni-doped and (Ni, I) co-doped CdS, which are systematically investigated by adopting the first principles approach. The findings reveal that Ni doping at the Cd site in CdS crystal modifies its ground state of non-magnetic to half-metallic ferromagnet, whereas the introduction of I as a co-doping at the S site changes the ground state of Ni-doped CdS system from half-metallic to magnetic metal. More importantly, it is found that the magnetic moment of Ni-dopant is reduced and the magnetic exchange coupling between Ni sites is enhanced after I co-doping. The estimated Curie temperature of (Ni, I) co-doped CdS is above room temperature. These findings highlight that the co-doped (Ni, I) CdS sample is a promising potential candidate for spintronics applications in future.
Impact of Fe-Doping on Magneto-Optoelectronic Properties of Beryllium Sulfide (BeS): A First Principles Insight

Saba Shahid,Mudassir Ishfaq,Shatha A. Aldaghfag,Muhammad Yaseen,Nasarullah,Romeasa Shahzade

DOI: https://doi.org/10.1016/j.physb.2024.416388

IF: 2.988

2024-08-18

Physica B Condensed Matter

Abstract:The investigation of electronic, magnetic, structural, and optical properties of Be 1-x Fe x S alloys is carried out by utilizing FP-LAPW method based on density functional theory (DFT) calculations. Fe-doped BeS exhibits half-metallic ferromagnetic behaviour at all doping concentrations, transforming it as favourable contender for spintronic devices. Our findings reveal the presence of 100% spin polarization of electronic states. The calculated values of magnetic moments are 4.0, 8.0, and 16.0 μ B for Be 1-x Fe x S at x = 6.25%, 12.5%, and 25%, respectively. The pristine BeS compound adopts a cubic close packing structure, known as the zinc blende structure, with the space group F-43m. The static values of R(0) are observed to be 0.21, 0.56, and 0.72 for Fe doped BeS at Be 0.9375 Fe 0.0625 S, Be 00875 Fe 0.125 S and Be 0.75 Fe 0.25 S, respectively. The maximum values of σ(ω) are calculated as 16375.9 (1/Ω cm) for 6.25%, 14336.5 (1/Ω cm) for 12.5%, and 11002.1 (1/Ω cm) for 25% Fe doped BeS. The present study unveils maximum optical absorption and conductivity in the ultraviolet (UV) region, suggesting its potential application in UV-based photovoltaic devices.

physics, condensed matter
Theoretical Study of Electric, Dielectric, and Optical Properties in Ion Doped Multiferroic SrFe12O19 Nanoparticles

Angel T. Apostolov,Iliana N. Apostolova,Julia Mihailowa Wesselinowa

DOI: https://doi.org/10.3390/ma17071544

IF: 3.4

2024-03-29

Materials

Abstract:Electric, dielectric, and optical (band gap) properties of pure multiferroic as well as La- and Ni-doped SrFe12O19 (SFO) (at different sites) are investigated using a microscopic model and Green's function technique. The concentration dependence of the polarization P is considered for substitution of rare earths ions on the Sr sites. For a small La ion doping concentration, x = 0.1, La-doped SFO is ferroelectric, whereas for a larger doping concentration, for example x = 0.5, it is antiferroelectric. The real part of the dielectric constant ε increases with an increasing magnetic field h. ε decreases with an increasing frequency and La dopants. Therefore, La-doped SFO is suitable for microwave application with a low dielectric constant. The magnetic properties of pure SFO NPs are also studied. Ni doping at the Fe site of SFO leads to enhanced ferroelectric polarization and dielectric constant. The band gap decreases or increases by substitution of Ni or In ions on the Fe site, respectively. The results reveal that the tuned band gap of Ni-doped SFO makes it a crucial candidate for optoelectronic and solid oxide fuel cell applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Effect of Fe-doping on VS2 monolayer: A first-principles study

Mirali Jafari,Nasim Rahmani-Ivriq,Anna Dyrdal

2024-11-19

Abstract:Transition metal dichalcogenides (TMDs), like VS2, display unique electronic, magnetic, and optical properties, making them promising for spintronic and optoelectronic applications. Using first-principles calculations based on the Density Functional Theory (DFT), we study the effect of Fe-doping on the electronic and magnetic properties of a VS2 monolayer. The pristine VS2 monolayer has ferromagnetic order and a small energy bandgap. This work aims to comprehensively study the substitution of selected Vanadium atoms in the VS2 monolayer by Iron (Fe) atoms, where the substitution concerns Vanadium atoms at various sites within the 2x2 and 3x3 supercells. This leads to significant modifications of the electronic band structure, magnetic anisotropy energy (MAE), and optical response (e.g., dielectric constant and absorption coefficient). The results provide valuable insights into engineering the VS2 monolayer properties for future applications, ranging from spintronics to cancer therapy in medical science.

Materials Science
A new ferromagnetic semiconductor system of Eu$_{1-x}$Sr$_x$AgP $(x = 0.0-0.6)$ compounds: Crystallographic, magnetic, and magneto-resistive properties

Qian Zhao,Kaitong Sun,Junchao Xia,Hai-Feng Li

DOI: https://doi.org/10.1016/j.mtcomm.2024.109197

2024-05-14

Abstract:Adjusting chemical pressure through doping is a highly effective method for customizing the chemical and physical properties of materials, along with their respective phase diagrams, thereby uncovering novel quantum phenomena. Here, we successfully synthesized Sr-doped Eu$_{1-x}$Sr$_x$AgP $(x = 0.0-0.6)$ and conducted a comprehensive investigation involving crystallography, magnetization, heat capacity, and magnetoresistance. Utilizing X-ray diffraction and PPMS DynaCool measurements, we studied Eu$_{1-x}$Sr$_x$AgP in detail. The hexagonal structure of parent EuAgP at room temperature, with the $P6_3/mmc$ space group, remains unaltered, while the lattice constants expand. The magnetic phase transition from paramagnetism to ferromagnetism, as temperature decreases, is suppressed through the gradual introduction of strontium doping. Heat capacity measurements reveal a shift from magnon-dominated to predominantly phonon and electron contributions near the ferromagnetic phase with increasing doping levels. The resistivity-temperature relationship displays distinct characteristics, emphasizing the impact of Sr doping on modifying charge transport. Magnetoresistance measurements uncover novel phenomena, illustrating the adjustability of magnetoresistance through Sr doping. Notably, Sr doping results in both positive magnetoresistance (up to 20\%) and negative magnetoresistance (approximately -60\%). The resistivity and magnetic phase diagram were established for the first time, revealing the pronounced feasibility of Sr doping in modulating EuAgP's resistivity. This study has provided valuable insights into the intricate interplay between structural modifications and diverse physical properties. The potential for technological advancements and the exploration of novel quantum states make Sr-doped Eu$_{1-x}$Sr$_x$AgP a compelling subject for continued research in the field of applied physics.

Materials Science,Strongly Correlated Electrons,Applied Physics
Doping-dependent optoelectronic, and magnetic properties of monolayer SnS

Mazia Asghar,Hamid Ullah,M. Waqas Iqbal,Young-Han Shin

DOI: https://doi.org/10.1016/j.mssp.2022.107049

IF: 4.1

2022-08-30

Materials Science in Semiconductor Processing

Abstract:Based on the first-principles calculations, we examine the effects of In/Sb/P doping on the structure, electronics, and magnetic properties of monolayer SnS. We have examined that the In-/Sb-/P-doped SnS is energetically more favorable under the S-rich condition due to high formation energies. The doping of In at Sn site keeps the semiconducting nature of monolayer SnS, and the Sb doping turns it to metallic. Interestingly, the In-doping turns the non-magnetic monolayer SnS to the magnetic one with a magnetic moment of 1.00 μB . Additionally, the ferromagnetic behavior is observed at a larger distance confirming the large range ferromagnetism in the In-doped SnS. Importantly, for the In-doped system, a high MAE of 40.91 meV is calculated. Furthermore, the doping P at the S-site in monolayer SnS trun the semiconductor nature to a metallic one. Additional experimental studies into the efficient utilization of these systems in the fields of photo-electronics and magnetic semiconductor devices are very desirable.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Tuning the magnetic properties of doped ZnS using transition metal doping: A multi-scale computational approach

Abdelhamid Ait M’hid,Guojian Li,Mourad Boughrara,Mohamed Kerouad,Qiang Wang

DOI: https://doi.org/10.1016/j.mtcomm.2023.107825

IF: 3.8

2023-12-09

Materials Today Communications

Abstract:Transition metal (TM)-doped dilute magnetic semiconductors (DMS) have emerged as promising materials for spintronic applications such as spin-polarized transport and information storage. However, achieving robust room-temperature ferromagnetism in DMS remains a key challenge. This work undertakes a comprehensive investigation of the effects of Ti- and Cr-doping and (Ti,Cr)-codoping on the structural, electronic, and magnetic properties of wurtzite ZnS using first-principles pseudopotential plane-wave self-consistent field calculations and Monte Carlo simulations. The first-principles DFT calculations were performed using the spin-polarized GGA+U approach to account for strong electron–electron interactions. Structural relaxations revealed expanded lattice parameters and bond lengths for the doped systems compared to pure ZnS, attributed to the larger ionic radii of the dopants. Formation energy calculations confirmed the thermodynamic stability of doping. The band structure and density of states analysis demonstrated the half-metallic nature of the doped ZnS systems with 100% spin polarization induced by strong hybridization between the TM-3d and S-3p states. This mediates robust ferromagnetic coupling, with total magnetic moments around 4-8 μB /cell depending on dopant type and concentration. To complement the zero-temperature DFT results, temperature-dependent Monte Carlo simulations using the single-spin flip Heat Bath algorithm were implemented. The modeling of magnetization, susceptibility, specific heat, and hysteresis loops enabled extracting Curie temperatures up to 427.6 K for 12.5% Cr-doped ZnS. The synergistic combination of first-principles DFT and Monte Carlo computational techniques provides significant insights into tailoring the magnetic properties of TM-doped ZnS dilute magnetic semiconductors. The tunability of structural, electronic, and magnetic characteristics through control of dopant selection and concentration demonstrates the promising potential of transition metal-doped ZnS for spintronic devices operable at room-temperature.

materials science, multidisciplinary
Composition‐Controllable Syntheses and Property Modulations from 2D Ferromagnetic Fe5Se8 to Metallic Fe3Se4 Nanosheets

Yahuan Huan,Tiantian Luo,Xiaocang Han,Jun Ge,Fangfang Cui,Lijie Zhu,Jingyi Hu,Feipeng Zheng,Xiaoxu Zhao,Lili Wang,Jian Wang,Yanfeng Zhang

DOI: https://doi.org/10.1002/adma.202207276

IF: 29.4

2022-01-01

Advanced Materials

Abstract:Exploring new-type 2D magnetic materials with high magnetic transition temperature and robust air stability has attracted wide attention for developing innovative spintronic devices. Recently, intercalation of native metal atoms into the van der Waals gaps of 2D layered transition metal dichalcogenides (TMDs) has been developed to form 2D non-layered magnetic TMDs, while only succeeded in limited systems (e.g., Cr2 S3 , Cr5 Te8 ). Herein, composition-controllable syntheses of 2D non-layered iron selenide nanosheets (25% Fe-intercalated triclinic Fe5 Se8 and 50% Fe-intercalated monoclinic Fe3 Se4 ) are firstly reported, via a robust chemical vapor deposition strategy. Specifically, the 2D Fe5 Se8 exhibits intrinsic room-temperature ferromagnetic property, which is explained by the change of electron spin states from layered 1T'-FeSe2 to non-layered Fe-intercalated Fe5 Se8 based on density functional theory calculations. In contrast, the ultrathin Fe3 Se4 presents novel metallic features comparable with that of metallic TMDs. This work hereby sheds light on the composition-controllable synthesis and fundamental property exploration of 2D self-intercalation induced novel TMDs compounds, by propelling their application explorations in nanoelectronics and spintronics-related fields.
Synthesis and Characterization of Molybdenum- and Sulfur-Doped FeSe

Marwa H.A. Aouelela,Mohamed Taha,Samaa I. El-dek,Abdelwahab Hassan,Alexander N. Vasiliev,Mahmoud Abdel-Hafiez

DOI: https://doi.org/10.1021/acsomega.3c05684

IF: 4.1

2023-10-10

ACS Omega

Abstract:During the past decade, two-dimensional (2D) layered materials opened novel opportunities for the exploration of exciting new physics and devices owing to their physical and electronic properties. Among 2D materials, iron selenide has attracted much attention from several physicists as they provide a fruitful stage for developing new superconductors. Chemical doping offers a powerful approach to manipulate and optimize the electronic structure and physical properties of materials. Here, to...

chemistry, multidisciplinary
Effect of substitutional Sb doping on the structural stability, half-metallicity, elastic properties, electronic properties, and magnetism of the Co 2 MnSn full Heusler compound

M.Y. Raïâ,R. Masrour,M. Hamedoun,J. Kharbach,A. Rezzouk,N. Benzakour,K. Bouslykhane

DOI: https://doi.org/10.1016/j.mssp.2024.108972

IF: 4.1

2024-10-10

Materials Science in Semiconductor Processing

Abstract:We conducted Density Functional Theory (DFT) calculations using the full potential linearized augmented plane wave (FP-LAPW) method to modify the Fermi level by introducing Sb doping into Co 2 MnSn.This was done through the Generalized Gradient Approximation (GGA) and modified Becke-Johnson (mBJ-GGA) formalisms to enhance spin polarization and suggest signs of half-metallicity. For both ferromagnetic and paramagnetic phases, lattice optimization was performed to identify the stable magnetic structure. The results designate that the doped alloys are stable in a ferromagnetic phase with L2 1 structure. The calculated elastic constants suggest that the doped alloys meet the criteria for mechanical stability. The magnetism in these compounds is primarily due to the localized moments on the Mn and Co atoms. According to mBJ-GGA calculations, the total magnetic moment slightly increases with Sb doping. Analysis of the optical constants revealed the optoelectronic properties, confirming semiconducting behavior. Doping elements to achieve half-metallicity is demonstrated to be an effective method for discovering new materials suitable for spintronics applications.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
A Recipe to Design an Electronic Instrument

Belén Torrente,A. Dapena,S. Barro,J. Brégains,C. Escudero

Abstract:The widespread idea that traditional classroom lectures is not the best teaching approach has motivated educators to continuously seek new ways to encourage students towards active involmenent. Studies show that constructivist learners tend to explore the concepts covered in laboratory activities, resulting in a richer understanding. In this sense, we will propose to integrate simple sensor-based electronic musical instruments in signal processing courses to help students understand basic concepts, while making them to interact with a real systems that integrates, at once, software and hardware components.
Electronic, magnetic and optical properties of Cr and Fe doped ZnS and CdS diluted magnetic semiconductors: revised study within TB-mBJ potential

Wafa Ghazal,Souheyla Mamoun,Mohammed Benali Kanoun,Souraya Goumri-Said,Abdelkrim Elhasnaine Merad

DOI: https://doi.org/10.1007/s11082-023-04602-5

IF: 3

2023-02-05

Optical and Quantum Electronics

Abstract:Transition metal (TM) doping ZnS and CdS have attracted extensive research interests due to their potential spintronic applications. Most of these theoretical and experimental analyses have focused on their wurtzite-type structure. However, few investigations for their zinc-blende-type structure are reported in the literature, especially for their optical properties. Here, we present an in-depth assessment of the electronic structures, magnetic and optical properties of ZnS and CdS semiconductors doped with transition metal atoms (TM) X (X = Cr and Fe) that we have carried out by first principles calculations. On the basis of the GGA approximation, PBEsol and TB-mBJ potentials are used for exchange and correlation potential. The improvement in the energy band gap value, within TB-mBJ potential, is very remarkable indicating that all the studied compounds are wide-band gap materials (Eg ≥ 3 eV). The magnetic half-metallic band gap, band structures, densities of states and optical properties are analyzed in depth. For the studied compounds, our results show a metallic nature for spin up and keep the semiconductor nature for spin down for Cr atom while a reversed behavior is revealed for Fe atom. The corresponding revised data are proposed following the subsequent TB-mBJ potential. Moreover, the half-metallic band gap EgHM decreases from CdS to ZnS, in opposite to the PBEsol prediction for the both Fe and Cr impurities. New trends and conclusions are then presented showing the impact of this latter potential in improving the values of several studied properties and not limited only to the energy bandgap, as is known. With this potential, the maximum absorption reaches its high energy value. Our results are also compared with available theoretical and experimental values and a good agreement is obtained. We hope that our revised research can be useful for technological applications such as spintronics and photovoltaics.

engineering, electrical & electronic,optics,quantum science & technology
First-principles study of a Mn-doped In2Se3 monolayer: Coexistence of ferromagnetism and ferroelectricity with robust half-metallicity and enhanced polarization

Chunmei Zhang,Lei Zhang,Cheng Tang,Stefano Sanvito,Bo Zhou,Zhenyi Jiang,Aijun Du

DOI: https://doi.org/10.1103/PhysRevB.102.134416

IF: 3.7

2020-01-01

Physical Review B

Abstract:Two-dimensional (2D) materials with coexistence of ferromagnetism (FM) and ferroelectricity (FE) are rare. By using first-principles modeling, here we report that doping of magnetic transition metal (TM) atoms in FE monolayer In2Se3 could introduce giant local FM magnetic moments (4 mu(B) per Mn atom). The exchange splitting energy, and the C-3 nu crystal field together with the hybridization of the Mn-d and Se-p orbitals result in spin-polarized states near the Fermi surface. More interestingly, the asymmetric charge distribution of the Jahn-Teller ion (Mn3+ d(4)) further lift the twofold degeneracy of the Mn-d el* states. This affects the band structure and enhances the FE polarization in monolayer In2Se3. Our work paves the way for tailoring FM in 2D FE via doping magnetic moments from TM atoms. The half-metallicity combined with the enhanced FE polarization make Mn-doped In2Se3 a candidate for potential applications in information technology and spintronic devices.
Large perpendicular magnetic anisotropy, high curie temperature, and half-metallicity in monolayer CrSI induced by substitution doping

Ruilin Han,Huaiqian Hou,Yu Yan

DOI: https://doi.org/10.1016/j.jmmm.2023.171074

IF: 3.097

2023-07-27

Journal of Magnetism and Magnetic Materials

Abstract:The experimental discovery of two-dimensional (2D) intrinsic ferromagnets have sparked intense interest due to their potential applications in spintronics. However, the small magnetic anisotropy and low Curie temperature ( T C ) hinder their applications. Herein, through comprehensive first-principles calculations and Monte Carlo simulations, we investigate how Mn substitution doping affects the structure, electronic structure, magnetic properties, and T C of monolayer CrSI. Our calculations show that in contrast to ferromagnetic semiconductor with a T C of 175 K of monolayer CrSI, Mn doped monolayer CrMnS 2 I 2 is a half-metallic ferromagnet with a T C of 312 K. Different from in-plane magnetic anisotropy of monolayer CrSI, the easy axis of monolayer CrMnS 2 I 2 is out-of-plane, and the magnetic anisotropy of monolayer CrMnS 2 I 2 can reach to 1.434 meV/atom, which is much larger than 0.001 meV/atom of monolayer CrSI. Additionally, the phonon dispersion, ab initio molecular dynamics simulations, formation energy, and elastic constants calculations indicate that monolayer CrMnS 2 I 2 possesses excellent stability. Our findings provide a promising route to realize 2D intrinsic ferromagnetic half-metallic materials with a high T C and a large perpendicular magnetic anisotropy.

materials science, multidisciplinary,physics, condensed matter
First-principles study of a Mn-doped In 2 Se 3 monolayer: Coexistence of ferromagnetism and ferroelectricity with robust half-metallicity and enhanced polarization

Chunmei Zhang,Lei Zhang,Cheng Tang,Stefano Sanvito,Bo Zhou,Zhenyi Jiang,Aijun Du

DOI: https://doi.org/10.1103/physrevb.102.134416

IF: 3.7

2020-10-13

Physical Review B

Abstract:Two-dimensional (2D) materials with coexistence of ferromagnetism (FM) and ferroelectricity (FE) are rare. By using first-principles modeling, here we report that doping of magnetic transition metal (TM) atoms in FE monolayer In2Se3 could introduce giant local FM magnetic moments (4μB per Mn atom). The exchange splitting energy, and the C3ν crystal field together with the hybridization of the Mn-d and Se-p orbitals result in spin-polarized states near the Fermi surface. More interestingly, the asymmetric charge distribution of the Jahn-Teller ion (Mn3+d4) further lift the twofold degeneracy of the Mn-d e1* states. This affects the band structure and enhances the FE polarization in monolayer In2Se3. Our work paves the way for tailoring FM in 2D FE via doping magnetic moments from TM atoms. The half-metallicity combined with the enhanced FE polarization make Mn-doped In2Se3 a candidate for potential applications in information technology and spintronic devices.

physics, condensed matter, applied,materials science, multidisciplinary
Controllable Synthesis Quadratic-Dependent Unsaturated Magnetoresistance of Two-Dimensional Nonlayered Fe 7 S 8 with Robust Environmental Stability

Peng Wang,Yao Wen,Xiaoxu Zhao,Baoxing Zhai,Ruofan Du,Mo Cheng,Zheng Liu,Jun He,Jianping Shi

DOI: https://doi.org/10.1021/acsnano.2c02267

IF: 17.1

2022-04-25

ACS Nano

Abstract:Two-dimensional (2D) iron chalcogenides (FeX, X = S, Se, Te) are emerging as an appealing class of materials for a wide range of research topics, including electronics, spintronics, and catalysis. However, the controlled syntheses and intrinsic property explorations of such fascinating materials still remain daunting challenges, especially for 2D nonlayered Fe7S8 with mixed-valence states and high conductivity. Herein, we design a general and temperature-mediated chemical vapor deposition (CVD) approach to synthesize ultrathin and large-domain Fe7S8 nanosheets on mica substrates, with the thickness down to ∼4.4 nm (2 unit-cell). Significantly, we uncover a quadratic-dependent unsaturated magnetoresistance (MR) with out-of-plane anisotropy in 2D Fe7S8, thanks to its ultrahigh crystalline quality and high conductivity (∼2.7 × 105 S m-1 at room temperature and ∼1.7 × 106 S m-1 at 2 K). More interestingly, the CVD-synthesized 2D Fe7S8 nanosheets maintain robust environmental stability for more than 8 months. These results hereby lay solid foundations for synthesizing 2D nonlayered iron chalcogenides with mixed-valence states and exploring fascinating quantum phenomena.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
The Structural, Electronic, and Magnetic Properties of Srfeon (N=2 and 2.5): A Gga+U Study

Wu Hai-Ping,Deng Kai-Ming,Tan Wei-Shi,Xiao Chuan-Yun,Hu Feng-Lan,Li Qun-Xiang

DOI: https://doi.org/10.1088/1674-1056/18/11/065

2009-01-01

Abstract:Using density-functional calculations within the generalized gradient approximation (GGA)+U framework, we investigate the structural, electronic, and magnetic properties of the ground states of SrFeOn (n = 2 and 2.5). The magnetism calculations show that the ground states of both SrFeO2 and SrFeO2.5 have G type antiferromagnetic ordering, with indirect band gaps of 0.89 and 0.79 eV, respectively. The electronic structure calculations demonstrate that Fe cations are in the high-spin state of (dz2)2 (dxz, dyz)2 (dxy)1(dx2–y2)1 (S = 2), unlike the previous prediction of (dxz, dyz)3 (dxy)1 (dz2)1 (dx2–y2)1 (S = 2) for SrFeO2, and in the high-spin state of (dxy, dxz, dyz, dx2–y2, z2)5 (S = 5/2) for SrFeO2.5.
Diverse electronic and magnetic properties of CrS2 enabling novel strain-controlled 2D lateral heterostructure spintronic devices

Kaiyun Chen,Junkai Deng,Yuan Yan,Qian Shi,Tieyan Chang,Xiangdong Ding,Jun Sun,Sen Yang,Jefferson Zhe Liu

DOI: https://doi.org/10.48550/arXiv.2005.00176

2020-05-01

Abstract:Lateral heterostructures of two-dimensional (2D) materials, integrating different phases or materials into a single piece of nanosheet, have attracted intensive research interests in the past few years for high-performance electronic and optoelectronic devices. It also holds promises to significantly improve the performance and enable new functions of spintronic devices. It is imperative to have a 2D material possessing diverse electronic and magnetic properties that are required in spintronics. In this work, using density functional theory calculations, we surveyed all IV, V and VI group transition metal dichalcogenides (TMDs) and discovered that CrS2 has the most diverse electronic and magnetic properties: antiferromagnetic (AFM) metallic 1T phase, nonmagnetic (NM) semiconductor 2H phase, and ferromagnetic (FM) semiconductor 1T_prime phase with a Curie temperature of ~1000 K. More interestingly, we found that a tensile or compressive strain could turn 1T_prime phase into a spin-up or spin-down half metal. Such a unique feature enables designing strain-controlled spintronic devices using a single piece of CrS2 crystal with improved energy efficiency, which remains a challenge in miniaturization of spintronic devices. In-depth analysis attributed the unique strain tunability to the interplay between strain-induced lattice deformation and different spatial orientation of the spin-up/spin-down electronic orbitals. A prototypical design of a simple spin-valve logic device operated by strain is also presented.

Materials Science

Toward an Open Digital Tutorial for Ancient Greek v. 2.0

First-principles study of magnetic and optical properties in dopant-doped two-dimensional SnS2

A two-dimensional Fe-doped SnS2 magnetic semiconductor

Ferromagnetism of Ni and I Co-Doped CdS: A First-Principles Study

Impact of Fe-Doping on Magneto-Optoelectronic Properties of Beryllium Sulfide (BeS): A First Principles Insight

Theoretical Study of Electric, Dielectric, and Optical Properties in Ion Doped Multiferroic SrFe12O19 Nanoparticles

Effect of Fe-doping on VS2 monolayer: A first-principles study

A new ferromagnetic semiconductor system of Eu$_{1-x}$Sr$_x$AgP $(x = 0.0-0.6)$ compounds: Crystallographic, magnetic, and magneto-resistive properties

Doping-dependent optoelectronic, and magnetic properties of monolayer SnS

Tuning the magnetic properties of doped ZnS using transition metal doping: A multi-scale computational approach

Composition‐Controllable Syntheses and Property Modulations from 2D Ferromagnetic Fe5Se8 to Metallic Fe3Se4 Nanosheets

Synthesis and Characterization of Molybdenum- and Sulfur-Doped FeSe

Effect of substitutional Sb doping on the structural stability, half-metallicity, elastic properties, electronic properties, and magnetism of the Co 2 MnSn full Heusler compound

A Recipe to Design an Electronic Instrument

Electronic, magnetic and optical properties of Cr and Fe doped ZnS and CdS diluted magnetic semiconductors: revised study within TB-mBJ potential

First-principles study of a Mn-doped In<sub>2</sub>Se<sub>3</sub> monolayer: Coexistence of ferromagnetism and ferroelectricity with robust half-metallicity and enhanced polarization

Large perpendicular magnetic anisotropy, high curie temperature, and half-metallicity in monolayer CrSI induced by substitution doping

First-principles study of a Mn-doped In 2 Se 3 monolayer: Coexistence of ferromagnetism and ferroelectricity with robust half-metallicity and enhanced polarization

Controllable Synthesis Quadratic-Dependent Unsaturated Magnetoresistance of Two-Dimensional Nonlayered Fe 7 S 8 with Robust Environmental Stability

The Structural, Electronic, and Magnetic Properties of Srfeon (N=2 and 2.5): A Gga+U Study

Diverse electronic and magnetic properties of CrS2 enabling novel strain-controlled 2D lateral heterostructure spintronic devices