Layer-Dependent Interaction Effects in the Electronic Structure of Twisted Bilayer Graphene Devices

Nicholas Dale,M. Iqbal Bakti Utama,Dongkyu Lee,Nicolas Leconte,Sihan Zhao,Kyunghoon Lee,Takashi Taniguchi,Kenji Watanabe,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Roland J. Koch,Jeil Jung,Feng Wang,Alessandra Lanzara
DOI: https://doi.org/10.1021/acs.nanolett.3c00253
IF: 10.8
2023-07-26
Nano Letters
Abstract:Near the magic angle, strong correlations drive many intriguing phases in twisted bilayer graphene (tBG) including unconventional superconductivity and chern insulation. Whether correlations can tune symmetry breaking phases in tBG at intermediate (≳ 2°) twist angles remains an open fundamental question. Here, using ARPES, we study the effects of many-body interactions and displacement field on the band structure of tBG devices at an intermediate (3°) twist angle. We observe a layer- and...
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
What problem does this paper attempt to address?
The problem that this paper attempts to solve is whether electron - electron interactions can modulate the symmetry - breaking phase in twisted bilayer graphene (tBG) with an intermediate twist angle (about more than 2°). Specifically, the researchers used angle - resolved photoemission spectroscopy (ARPES) technology to study the influence of many - body interactions and displacement fields on the band structure in tBG devices with an intermediate twist angle (3°). They observed band - like renormalization phenomena at the K - point, which are qualitatively consistent with the predictions of the Hartree - Fock interaction model. In addition, they also provided evidence that doping can enhance the inversion - symmetry breaking caused by correlations, manifested as the fact that the band gap at the Dirac point can be adjusted by doping. These results indicate that at intermediate twist angles, electron interactions play an important role in the physical properties of tBG and provide a new approach for designing moiré heterostructures with specific band structures and symmetry - breaking phases. ### Main research contents: 1. **Experimental method**: Use gated ARPES to directly measure the layer - dependent electron structure of the intermediate - angle (3°) twisted bilayer graphene device as a function of electrostatic doping and displacement fields. 2. **Observation results**: Observe layer - and doping - dependent band - like renormalization phenomena at the K - point, which are qualitatively consistent with the predictions of the Hartree - Fock interaction model. 3. **Symmetry breaking**: Provide evidence that doping can enhance the inversion - symmetry breaking caused by correlations, manifested as the fact that the band gap at the Dirac point can be adjusted by doping. 4. **Theoretical explanation**: By combining the displacement field and electron - electron interactions, this band gap can be enhanced within a single layer, thereby modulating the symmetry - breaking level of the system with atomic - layer precision. ### Key findings: - **Band - like renormalization**: Observe layer - and doping - dependent band - like renormalization phenomena at the K - point. - **Band - gap regulation**: The band gap at the Dirac point can be adjusted by doping, indicating that electron interactions play an important role in tBG at intermediate twist angles. - **Symmetry breaking**: Inversion - symmetry breaking can be enhanced by the combination of electron - electron interactions and displacement fields. ### Significance: These results not only reveal the electron - interaction and symmetry - breaking mechanisms in tBG at intermediate twist angles, but also provide a new approach for designing moiré heterostructures with specific band structures and symmetry - breaking phases. This provides an important experimental and theoretical basis for exploring and realizing relevant phase states in new two - dimensional materials.