Correlation-induced symmetry-broken states in large-angle twisted bilayer graphene on MoS2

Kaihui Li,Long-Jing Yin,Chenglong Che,Xueying Liu,Yulong Xiao,Songlong Liu,Qingjun Tong,Si-Yu Li,Anlian Pan
2023-07-09
Abstract:Strongly correlated states are commonly emerged in twisted bilayer graphene (TBG) with magic-angle, where the electron-electron (e-e) interaction U becomes prominent relative to the small bandwidth W of the nearly flat band. However, the stringent requirement of this magic angle makes the sample preparation and the further application facing great challenges. Here, using scanning tunneling microscopy (STM) and spectroscopy (STS), we demonstrate that the correlation-induced symmetry-broken states can also be achieved in a 3.45° TBG, via engineering this non-magic-angle TBG into regimes of U/W > 1. We enhance the e-e interaction through controlling the microscopic dielectric environment by using a MoS2 substrate. Simultaneously, the bandwidth of the low-energy van Hove singularity (VHS) peak is reduced by enhancing the interlayer coupling via STM tip modulation. When partially filled, the VHS peak exhibits a giant splitting into two states flanked the Fermi level and shows a symmetry-broken LDOS distribution with a stripy charge order, which confirms the existence of strong correlation effect in our 3.45° TBG. Our result paves the way for the study and application of the correlation physics in TBGs with a wider range of twist angle.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to achieve a symmetry - breaking state induced by strong correlations in twisted bilayer graphene (TBG) with large - angle distortion. Traditionally, this strong - correlation effect mainly appears in TBG at the so - called "magic angle" (approximately 1.1°), but it is very difficult to prepare samples at this specific angle and the scope of application is limited. Therefore, researchers hope to observe similar strong - correlation phenomena at larger twist angles, thereby expanding the scope of research and application of these phenomena. Specifically, by using scanning tunneling microscopy (STM) and spectroscopy (STS) techniques, the paper shows that in TBG at 3.45°, by engineering means to adjust the ratio (U/W) of electron - electron interaction (U) to bandwidth (W), a symmetry - breaking state induced by strong correlations can be achieved. The researchers achieved this through the following methods: 1. **Enhancing electron - electron interaction (U)**: By using MoS₂ as a substrate, the shielding effect of the dielectric environment is reduced, thereby enhancing the electron - electron interaction. 2. **Reducing bandwidth (W)**: By STM tip modulation to increase the inter - layer coupling, the bandwidth of the low - energy van Hove singularity (VHS) peak is reduced. When the VHS peak is partially filled, a huge splitting is observed, forming two states around the Fermi level and showing a striped charge - ordered distribution, which confirms the existence of the strong - correlation effect. This finding provides a new approach for studying and applying strong - correlation physics in a wider range of twist angles.