Abstract:A series of cadmium halides are introduced on the surface of SnO2 electron transport layer (ETL), both SnO2 and CsPbI2Br films are modified by dual direction thermal diffusion treatment, so that SnO2 ETL with better matching energy levels and CsPbI2Br films with fewer defects are obtained. Finally, a carbon‐based CsPbI2Br PSCs with a PCE of 14.47% is obtained. In recent years, carbon‐based CsPbI2Br perovskite solar cells (PSCs) have attracted more attention due to their low cost and good stability. However, the power conversion efficiency (PCE) of carbon‐based CsPbI2Br PSCs is still no more than 16%, because of the defects in CsPbI2Br or at the interface with the electron transport layer (ETL), as well as the energy level mismatch, which lead to the loss of energy, thus limiting PCE values. Herein, a series of cadmium halides are introduced, including CdCl2, CdBr2 and CdI2 for dual direction thermal diffusion treatment. Some Cd2+ ions thermally diffuse downward to passivate the defects inside or on the surface of SnO2 ETL. Meanwhile, the energy level structure of SnO2 ETL is adjusted, which is in favor of the transfer of electron carriers and blocking holes. On the other hand, part of Cd2+ and Cl− ions thermally diffuse upward into the CsPbI2Br lattice to passivate crystal defects. Through dual direction thermal diffusion treatment by CdCl2, CdI2 and CdBr2, the performance of devices has been significantly improved, and their PCE has been increased from 13.01% of the original device to 14.47%, 14.31%, and 13.46%, respectively. According to existing reports, 14.47% is one of the highest PCE of carbon‐based CsPbI2Br PSCs with SnO2 ETLs.

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