Abstract:Electronic correlations could have significant impact on the material properties. They are typically pronounced for localized orbitals and enhanced in low-dimensional systems, so two-dimensional (2D) transition metal compounds could be a good platform to study their effects. Recently, a new class of 2D transition metal compounds, the MoSi2N4-family materials, has been discovered, and some of them exhibit intrinsic magnetism. Here, taking monolayer VSi2P4 as an example from the family, we investigate the impact of correlation effects on its physical properties, based on the first-principles calculations with the DFT+U approach. We find that different correlation strengths can drive the system into a variety of interesting ground states, with rich magnetic, topological, and valley features. With increasing correlation strength, while the system favors a ferromagnetic semiconductor state for most cases, the magnetic anisotropy and the band gap type undergo multiple transitions, and in the process, the band edges can form single, two, or three valleys for electrons or holes. Remarkably, there is a quantum anomalous Hall (QAH) insulator phase, which has a unit Chern number and has its chiral edge states polarized in one of the valleys. The boundary of the QAH phase corresponds to the half-valley semimetal state with fully valley polarized bulk carriers. We further show that for phases with the out-of-plane magnetic anisotropy, the interplay between spin-orbit coupling and orbital character of valleys enables an intrinsic valley polarization for electrons but not for holes. This electron valley polarization can be switched by reversing the magnetization direction, providing a new route of magnetic control of valleytronics. Our result sheds light on the possible role of correlation effects in the 2D transition metal compounds, and it will open new perspectives for spintronic, valleytronic, and topological nanoelectronic applications based on these materials.

Influence of electronic correlation on the valley and topological properties of VSiGeP 4 monolayer

Correlation-driven topological and valley states in monolayer VSi 2 P 4

Structural Phase Transition of Multilayer VSe2.

Effects of crystal deformation on spin-valley interplay and topological phase transition: a case study on VSi2X4 (X = N or P) monolayers

Built-in electric field and strain tunable valley-related multiple topological phase transitions in VSiXN$_4$ (X= C, Si, Ge, Sn, Pb) monolayers

Built-in electric field and strain tunable valley-related multiple topological phase transitions in monolayers

Strain-engineering induced topological phase transitions and multiple valley states in Janus monolayer VCSiN4

Correlation-driven topological phase transition in 2D valleytronic materials: a mini-review

Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer

Quantum anomalous Hall effect and half-metal state of valley in VGe 2 N 4 monolayer

Van Der Waals Heterostructure Pt$_{2}$HgSe$_{3}$/CrI$_3$ for Topological Valleytronics

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Spin-valley Coupling in a Two-Dimensional VSi2N4 Monolayer

Valley-dependent Multiple Quantum States and Topological Transitions in Germanene-based Ferromagnetic van der Waals Heterostructures

Exploring the electronic and topological properties of single-layer VP 2 X 2 Y 2 (XY= AlS, BTe, GaS): Valley polarization and quantum anomalous Hall state

Van der Waals heterostructure Pt 2 HgSe 3 / CrI 3 for topological valleytronics

Phase-Dependent Magnetic Proximity Modulations on Valley Polarization and Splitting

All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors

Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

Tunable Valley Polarization in Janus WSSe by Magnetic Proximity Coupling to a CrI3 Layer

Electronic correlations in monolayer VS$_2$