Reversal of polarity in YSZ-based thin film potentiometric oxygen sensors

Nair Afijith Ravindranath,K. I. Gnanasekar
DOI: https://doi.org/10.1007/s10008-024-05916-4
IF: 2.747
2024-05-22
Journal of Solid State Electrochemistry
Abstract:The negative electric potential difference observed in a YSZ-based thin film potentiometric sensor at a low operating temperature of 673 K is investigated. The multilayered sensor is grown sequentially using pulsed laser deposition at 998 K with Cu-Cu 2 O reference electrode, YSZ electrolyte and Pt as working electrode respectively. The thickness of the Cu-Cu 2 O reference layer is a critical factor in thin film sensors as the Pt 3 O 4 phase stabilized along with Cu-Cu 2 O can reach the YSZ interface. XRD, μ- Raman and XPS confirm the formation of the Pt 3 O 4 phase on the reference side along with the Cu-Cu 2 O layer. However, the pure Pt 3 O 4 phase could not be stabilized in the thin film without Cu-Cu 2 O. The presence of the Pt 3 O 4 phase on the reference side generates a Pt-Pt 3 O 4 reference couple with an equilibrium oxygen partial pressure of ~ 10 4 ppm higher than the sample oxygen pressure of 10-10 3 ppm giving rise to a negative electric potential difference with a sensitivity of -7.5 mV/decade.
electrochemistry
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