Cross-plane transport in a single-molecule two-dimensional van der Waals heterojunction

Shiqiang Zhao, Qingqing Wu, Jiuchan Pi, Junyang Liu, Jueting Zheng, Songjun Hou, Junying Wei, Ruihao Li, Hatef Sadeghi, Yang Yang, Jia Shi, Zhaobin Chen, Zongyuan Xiao, Colin Lambert, Wenjing Hong

2020-05-29

Abstract:The cross-plane charge transport is demonstrated in single-molecule two-dimensional van der Waals heterojunctions.

What problem does this paper attempt to address?

Cross-plane Transport in a Single-Molecule Two-Dimensional Van Der Waals Heterojunction.

Shiqiang Zhao,Qingqing Wu,Jiuchan Pi,Junyang Liu,Jueting Zheng,Songjun Hou,Junying Wei,Ruihao Li,Hatef Sadeghi,Yang,Jia Shi,Zhaobin Chen,Zongyuan Xiao,Colin Lambert,Wenjing Hong

DOI: https://doi.org/10.1126/sciadv.aba6714

IF: 13.6

2020-01-01

Science Advances

Abstract:Two-dimensional van der Waals heterojunctions (2D-vdWHs) stacked from atomically thick 2D materials are predicted to be a diverse class of electronic materials with unique electronic properties. These properties can be further tuned by sandwiching monolayers of planar organic molecules between 2D materials to form molecular 2D-vdWHs (M-2D-vdWHs), in which electricity flows in a cross-plane way from one 2D layer to the other via a single molecular layer. Using a newly developed cross-plane break junction technique, combined with density functional theory calculations, we show that M-2D-vdWHs can be created and that cross-plane charge transport can be tuned by incorporating guest molecules. The M-2D-vdWHs exhibit distinct cross-plane charge transport signatures, which differ from those of molecules undergoing in-plane charge transport.
A van der Waals pn heterojunction with organic/inorganic semiconductors

Daowei He,Yiming Pan,Haiyan Nan,Shuai Gu,Ziyi Yang,Bing Wu,Xiaoguang Luo,Bingchen Xu,Yuhan Zhang,Yun Li,Zhenhua Ni,Baigeng Wang,Jia Zhu,Yang Chai,Yi Shi,Xinran Wang

DOI: https://doi.org/10.48550/arXiv.1511.02361

2015-11-07

Abstract:van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with power conversion efficiency of 0.31% and photoresponsivity of 22mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.

Mesoscale and Nanoscale Physics,Materials Science
Cross-Plane Carrier Transport in Van der Waals Layered Materials

Sina Najmaei,Mahesh R Neupane,Barbara M Nichols,Robert A Burke,Alexander L Mazzoni,Matthew L Chin,Daniel A Rhodes,Luis Balicas,Aaron D Franklin,Madan Dubey

DOI: https://doi.org/10.1002/smll.201703808

IF: 13.3

Small

Abstract:The mechanisms of carrier transport in the cross-plane crystal orientation of transition metal dichalcogenides are examined. The study of in-plane electronic properties of these van der Waals compounds has been the main research focus in recent years. However, the distinctive physical anisotropies, short-channel physics, and tunability of cross layer interactions can make the study of their electronic properties along the out-of-plane crystal orientation valuable. Here, the out-of-plane carrier transport mechanisms in niobium diselenide and hafnium disulfide are explored as two broadly different representative materials. Temperature-dependent current-voltage measurements are preformed to examine the mechanisms involved. First principles simulations and a tunneling model are used to understand these results and quantify the barrier height and hopping distance properties. Using Raman spectroscopy, the thermal response of the chemical bonds is directly explored and the insight into the van der Waals gap properties is acquired. These results indicate that the distinct cross-plane carrier transport characteristics of the two materials are a result of material thermal properties and thermally mediated transport of carriers through the van der Waals gaps. Exploring the cross-plane electron transport, the exciting physics involved is unraveled and potential new avenues for the electronic applications of van der Waals layers are inspired.
Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Wenchao Chen,Jean-Pierre Leburton,Wen-Yan Yin,Erping Li

DOI: https://doi.org/10.1109/ted.2018.2866505

2018-01-01

Abstract:Computational study of atomically thin monolayer MoS2/WSe2 heterojunction with focus on carrier dynamics and thermal transport is performed by using finite-difference method to solve carrier transport equations and heat conduction equation. Carrier transport in the horizontal direction is in the micrometer scale, while in the vertical direction it is on the subnanometer scale. Carrier transport is modeled as diffusive transport in the horizontal direction with tunneling-assisted carrier recombination between two monolayers in the vertical direction as in the previous study. Band profile, quasi-Fermi level splitting, carrier distribution, and heat generation are investigated in detail. The heterojunction with high-doping concentration has larger current compared to that with low-doping concentration. Heat generation has two components which are due to the Joule heating and inelastic carrier recombination, respectively. The former is provided by the applied voltage, while the latter is from surrounding environment which acts as thermal reservoir. Since the heterojunction works very differently from the conventional p-n diode, it is compared to typical field-effect transistors due to similar device structures. The heat generation of the heterojunction is eight orders lower than that of typical nanoscale field-effect transistors because of its low-current density. Temperature increase in the heterojunction is also several orders of magnitude lower compared to typical nanoscale field-effect transistors.
Charge transport through single-molecule bilayer-graphene junctions with atomic thickness

Shiqiang Zhao,Ze-Ying Deng,Shadiah Albalawi,Qingqing Wu,Lijue Chen,Hewei Zhang,Xin-Jing Zhao,Hao Hou,Songjun Hou,Gang Dong,Yang Yang,Jia Shi,Colin J. Lambert,Yuan-Zhi Tan,Wenjing Hong

DOI: https://doi.org/10.1039/d1sc07024j

IF: 8.4

2022-01-01

Chemical Science

Abstract:Charge transport through single-molecule bilayer-graphene junctions fabricated by a cross-plane break junction technique can be tuned at the atomic level.

chemistry, multidisciplinary
Ultrafast carriers' separation imaging in WS2-WSe2 in plane heterojunction by transient reflectivity microscopy

Yangguang Zhong,Shuai Yue,Huawei Liu,Yuexing Xia,Anlian Pan,Shula Chen,Xinfeng Liu

2024-03-16

Abstract:Carrier transport in nanodevices plays a crucial role in determining their functionality. In the post-Moore era, the behavior of carriers near surface or interface domains the function of the whole devices. However, the femtosecond dynamics and nanometer-scale movement of carriers pose challenges for imaging their behavior. Techniques with high spatial-temporal resolution become imperative for tracking their intricate dynamics. In this study, we employed transient reflectivity microscopy to directly visualize the charge separation in the atomic interface of WS2-WSe2 in-plane heterojunctions. The carriers' drifting behavior was carefully tracked, enabling the extraction of drift velocities of 30 nm/ps and 10.6 nm/ps for electrons and holes. Additionally, the width of the depletion layer was determined to be 300 nm based on the carriers' moving trajectory. This work provides essential parameters for the potential effective utilization of these covalent in-plane heterojunctions,and demonstrates the success of transient optical imaging in unraveling the electrical behavior of nano devices, paving the way for a new avenue of electro-optical analysis.

Mesoscale and Nanoscale Physics
A van der Waals heterojunction strategy to fabricate layer-by-layer single-molecule switch

Yu-Ling Zou,Qing-Man Liang,Taige Lu,Yao-Guang Li,Shiqiang Zhao,Jian Gao,Zi-Xian Yang,Anni Feng,Jia Shi,Wenjing Hong,Zhong-Qun Tian,Yang Yang

DOI: https://doi.org/10.1126/sciadv.adf0425

IF: 13.6

2023-02-09

Science Advances

Abstract:Single-molecule electronics offer a unique strategy for the miniaturization of electronic devices. However, the existing experiments are limited to the conventional molecular junctions, where a molecule anchors to the electrode pair with linkers. With such a rod-like configuration, the minimum size of the device is defined by the length of the molecule. Here, by incorporating a single molecule with two single-layer graphene electrodes, we fabricated layer-by-layer single-molecule heterojunctions called single-molecule two-dimensional van der Waals heterojunctions (M-2D-vdWHs), of which the sizes are defined by the thickness of the molecule. We controlled the conformation of the M-2D-vdWHs and the cross-plane charge transport through them with the applied electric field and established that they can serve as reversible switches. Our results demonstrate that the M-2D-vdWHs, as stacked from single-layer 2D materials and a single molecule, can respond to electric field stimulus, which promises a diverse class of single-molecule devices with unprecedented size.

multidisciplinary sciences
Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS 2 Heterobilayers

Junhao Dong,Zhanggui Wu,Changan HuangFu,Yi Su,Xiaoyan Zheng,Wensheng Wu,Baisheng Sa,Jiajie Pei,Liying Jiao,Jingying Zheng,Hongbing Zhan,Qianting Wang

DOI: https://doi.org/10.1021/acsnano.4c11792

IF: 17.1

2024-11-18

ACS Nano

Abstract:Developing alternative two-dimensional (2D) metallic/semiconducting (M/S) van der Waals heterostructures (vdWHs) along with an understanding of interfacial photocarrier behavior is crucial for designing high-performance optoelectronic devices. Here, we comprehensively explored the photophysical model of photocarrier generation and interfacial transfer in as-grown 2D 1T'/2H MoS(2) vdWHs using various spectroscopic characterizations. We demonstrated the transitions of activated photocarrier...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Two-dimensional hot-electron transport in GaAs-AlGaAs heterojunctions

Weng Ming-qi,Wu Hang-sheng,MQ Weng,HS Wu

DOI: https://doi.org/10.1088/1004-423x/8/9/007

1999-01-01

Abstract:The mobility of a two-dimensional electron gas in GaAs-AlGaAs heterojunction is recomputed through solving numerically the balance equation. The peculiarity of the present study lies in that a new expression for the distribution function and the renormalized phonon frequency are used in the computation. Compared with those reported by previous authors, our result, shows better agreement with the experimental data.
Van Der Waals Heterostructures: Interfacial Charge Behavior Modulation in Perovskite Quantum Dot‐Monolayer MoS2 0D‐2D Mixed‐Dimensional Van Der Waals Heterostructures (adv. Funct. Mater. 34/2018)

Hualin Wu,Zhuo Kang,Zihan Zhang,Zheng Zhang,Haonan Si,Qingliang Liao,Suicai Zhang,Jing Wu,Xiankun Zhang,Yue Zhang

DOI: https://doi.org/10.1002/adfm.201870239

IF: 19

2018-01-01

Advanced Functional Materials

Abstract:To determine whether the traditional band alignment protocol can be applied in tuning interfacial charge behavior of 0D-2D mixed-dimensional van der Waals heterostructures (MvdWHs), Zhuo Kang, Yue Zhang, and co-workers realized a series of 0D-2D MvdWHs with various electronic structures in article number 1802015. Indeed, the photoinduced interfacial charge behavior is effectively modulated, as verified by comparing visualized optical characterizations as well as photogating transistor performance.
Out-of-plane dipole-modulated photogenerated carrier separation and recombination at Janus-MoSSe/MoS2 van der Waals heterostructure interfaces: Ab initio time-domain study

Xiangyue Liu,Huadong Zeng,Guangzhao Wang,Xinlu Cheng,Shengyuan A Yang,Hong Zhang,Xiang-Yue Liu,Shengyuan Yang

DOI: https://doi.org/10.1039/d2cp00789d

IF: 3.3

2022-01-01

Physical Chemistry Chemical Physics

Abstract:Out-of-plane mirror symmetry-breaking provides a powerful tool for engineering the electronic property and the exciton behavior of two-dimensional materials. Here, combined the time-domain density functional theory with nonadiabatic dynamics, we...

chemistry, physical,physics, atomic, molecular & chemical
Hybrid van der Waals heterojunction based on two-dimensional materials

Cuicui Sun,Meili Qi

DOI: https://doi.org/10.1088/1742-6596/2109/1/012012

2021-11-01

Journal of Physics: Conference Series

Abstract:Abstract Since the discovery of graphene, two-dimensional (2D) layered materials have always been the focus of material research. The layers of 2D materials are covalent bonds, and the layers are weakly bonded to adjacent layers through van der Waals (vdW) interactions. Since any dangling-bond-free surface could be combined with another material through vdW forces, the concept can be extended. This can refer to the integration of 2D materials with any other non-2D materials through non-covalent interactions. The emerging mixed-dimensional (2D+nD, where n is 0, 1 or 3) heterostructure devices has been studied and represents a wider range of vdW heterostructures. New electronic devices and optoelectronic devices based on such heterojunctions have unique functions. Therefore, this article depicts the research progress of (2D+nD, where n is 0, 1 or 3) vdW heterojunctions based on 2D materials.
Magnon Transport in Quasi-Two-Dimensional van der Waals Antiferromagnets

Wenyu Xing,Luyi Qiu,Xirui Wang,Yunyan Yao,Yang Ma,Ranran Cai,Shuang Jia,X. C. Xie,Wei Han,X. C. Xie

DOI: https://doi.org/10.1103/PhysRevX.9.011026

2019-10-04

Physical Review X

Abstract:Observations of long-distance magnon transport—the propagation of quantized spin waves—demonstrate that 2D van der Waals magnets could provide a platform for information and computing applications based on magnonics.

physics, multidisciplinary
Light-Driven Ionic and Molecular Transport through Atomically Thin Single Nanopores in MoS2/WS2 Heterobilayers

Zhishan Yuan,Zhuohua Liang,Liusi Yang,Daming Zhou,Zihua He,Junyu Yang,Chengyong Wang,Lei Jiang,Wei Guo

DOI: https://doi.org/10.1021/acsnano.4c09555

IF: 17.1

2024-09-03

ACS Nano

Abstract:Nanofluidic ionic and molecular transport through atomically thin nanopore membranes attracts broad research interest from both scientific and industrial communities for environmental, healthcare, and energy-related technologies. To mimic the biological ion pumping functions, recently, light-induced and quantum effect-facilitated charge separation in heterogeneous 2D-material assemblies is proposed as the fourth type of driving force to achieve active and noninvasive transport of ionic species through synthetic membrane materials. However, to date, engineering versatile van der Waals heterostructures into 2D nanopore membranes remains largely unexplored. Herein, we fabricate single nanopores in heterobilayer transition metal dichalcogenide membranes with helium ion beam irradiation and demonstrate the light-driven ionic transport and molecular translocation phenomena through the atomically thin nanopores. Experimental and simulation results further elucidate the driving mechanism as the photoinduced near-pore electric potential difference due to type II band alignment of the semiconducting WS2 and MoS2 monolayers. The strength of the photoinduced localized electric field near the pore region can be approximately 1.5 times stronger than that of its counterpart under the conventional voltage-driven mode. Consequently, the light-driven mode offers better spatial resolution for single-molecule detection. Light-driven ionic and molecular transport through nanopores in van der Waals heterojunction membranes anticipates transformative working principles for next-generation biomolecular sequencing and gives rise to fascinating opportunities for light-to-chemical energy harvesting nanosystems.
Realization of Vertical and Lateral Van Der Waals Heterojunctions Using Two-Dimensional Layered Organic Semiconductors

Yuhan Zhang,Zhongzhong Luo,Fengrui Hu,Haiyan Nan,Xiaoyong Wang,Zhenhua Ni,Jianbin Xu,Yi Shi,Xinran Wang

DOI: https://doi.org/10.1007/s12274-017-1442-5

IF: 9.9

2017-01-01

Nano Research

Abstract:Van der Waals (vdW) heterojunctions based on two-dimensional (2D) atomic crystals have been extensively studied in recent years. Herein, we show that both vertical and lateral vdW heterojunctions can be realized with layered molecular crystals using a two-step physical vapor transport (PVT) process. Both types of heterojunctions show clean and sharp interfaces without phase mixing under atomic force microscopy (AFM). They also exhibit a strong interfacial built-in electric field similar to that of their inorganic counterparts. These heterojunctions have greater potential for device applications than individual materials. The lateral heterojunction (LHJ) devices show rectifying characteristics due to the asymmetric energy barrier for holes at the interface, while the vertical heterojunction (VHJ) devices behave like metal–insulator–semiconductor tunnel junctions, with pronounced negative differential conductance (NDC). Our work extends the concept of vdW heterojunctions to molecular materials, which can be generalized to other layered organic semiconductors (OSCs) to obtain new device functionalities.
Unraveling energy and charge transfer in type-II van der Waals heterostructures

Junyi Liu,Zi Li,Xu Zhang,Gang Lu

DOI: https://doi.org/10.1038/s41524-021-00663-w

IF: 12.256

2021-11-29

npj Computational Materials

Abstract:Abstract Recent experiments observed significant energy transfer in type-II van der Waals (vdW) heterostructures, such as WS 2 /MoSe 2 , which is surprising due to their staggered band alignment and weak spectral overlap. In this work, we carry out first-principles calculations to shed light on energy and charge transfer in WS 2 /MoSe 2 heterostructure. Incorporating excitonic effect in nonadiabatic electronic dynamics, our first-principles calculations uncover a two-step process in competing energy and charge transfer, unravel their relative efficiencies and explore the means to control their competition. While both Dexter and Förster mechanisms can be responsible for energy transfer, they are shown to operate at different conditions. The excitonic effect is revealed to drive ultrafast energy and charge transfer in type-II WS 2 /MoSe 2 heterostructure. Our work provides a comprehensive picture of exciton dynamics in vdW heterostructures and paves the way for rational design of novel vdW heterostructures for optoelectronic and photovoltaic applications.

materials science, multidisciplinary,chemistry, physical
Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS2 Heterobilayers.

Junhao Dong,Zhanggui Wu,Changan HuangFu,Yi Su,Xiaoyan Zheng,Wensheng Wu,Baisheng Sa,Jiajie Pei,Liying Jiao,Jingying Zheng,Hongbing Zhan,Qianting Wang

DOI: https://doi.org/10.1021/acsnano.4c11792

IF: 17.1

2024-01-01

ACS Nano

Abstract:Developing alternative two-dimensional (2D) metallic/semiconducting (M/S) van der Waals heterostructures (vdWHs) along with an understanding of interfacial photocarrier behavior is crucial for designing high-performance optoelectronic devices. Here, we comprehensively explored the photophysical model of photocarrier generation and interfacial transfer in as-grown 2D 1T'/2H MoS2 vdWHs using various spectroscopic characterizations. We demonstrated the transitions of activated photocarrier transfer trajectories by tuning the pump photon energies across the 2H MoS2 bandgap. The importance of confined bilayer transfer systems and strong interlayer coupling at vdW interfaces for transfer efficiency was elucidated. Additionally, the fluorophlogopite substrate was found to be an external method for regulating photocarrier generation in individual 2H layers through the p-doping effect at the substrate-2H layer interfaces, and this influence was alleviated after introducing the 2H-1T' vdW interface. Particularly, 1T' MoS2 as a broadband hot carrier absorber enabled the ultrafast (∼133 fs) injection and extraction of energetic hot carriers into the 2H layer via a photothermionic emission mechanism, achieving a high efficiency of ∼41% under 900 nm photoexcitation at room temperature. Our work offers fundamental insights into the complex interfacial carrier photophysics in 2D M/S vdWHs, providing a way of constructing advanced multifunctional devices by using these emerging materials as active components and interface engineering.
Heteroatom-Induced Molecular Asymmetry Tunes Quantum Interference in Charge Transport through Single-Molecule Junctions

Yang Yang,Markus Gantenbein,Afaf Alqorashi,Junying Wei,Sara Sangtarash,Duan Hu,Hatef Sadeghi,Rui Zhang,Jiuchan Pi,Lichuan Chen,Xiaoyan Huang,Ruihao Li,Junyang Liu,Jia Shi,Wenjing Hong,Colin J. Lambert,Martin R. Bryce

DOI: https://doi.org/10.1021/acs.jpcc.8b03023

2018-06-05

The Journal of Physical Chemistry C

Abstract:We studied the interplay between quantum interference (QI) and molecular asymmetry in charge transport through a single molecule. Eight compounds with five-membered core rings were synthesized, and their single-molecule conductances were characterized using the mechanically controllable break junction technique. It is found that the symmetric molecules are more conductive than their asymmetric isomers and that there is no statistically significant dependence on the aromaticity of the core. In contrast, we find experimental evidence of destructive QI in five-membered rings, which can be tuned by implanting different heteroatoms into the core ring. Our findings are rationalized by the presence of antiresonance features in the transmission curves calculated using nonequilibrium Green’s functions. This novel mechanism for modulating QI effects in charge transport via tuning of molecular asymmetry will lead to promising applications in the design of single-molecule devices.
Photogenerated-Carrier Separation and Transfer in Two-Dimensional Janus Transition Metal Dichalcogenides and Graphene Van Der Waals Sandwich Heterojunction Photovoltaic Cells.

Xiaofeng Liu,Pengfei Gao,Wei Hu,Jinlong Yang

DOI: https://doi.org/10.1021/acs.jpclett.0c00706

IF: 6.888

2020-01-01

The Journal of Physical Chemistry Letters

Abstract:Two-dimensional (2D) Janus transition metal dichalcogenides (JTMDs) show direct band gaps and strong visible light absorption with promising applications in photovoltaic cells. Here, we investigate the electronic structures and dynamics of photogenerated carriers in 2D JTMDs and graphene van der Waals sandwich heterojunction (G/JTMDs/G) photovoltaic cells by using first-principles calculations. We find that the intrinsic built-in electric field in JTMDs results in an asymmetry potential, which can be used to effectively enhance the separation and transfer of photogenerated carriers from JTMDs to different graphene layers with a preferred direction within hundreds of femtoseconds in the G/JTMDs/G heterostructures. Furthermore, the photogenerated electrons (holes) can be transferred from monolayer MoSSe (MoSeTe) to the graphene sheets by the Se side with a lower (higher) potential, while the transfer of the photogenerated holes (electrons) is prohibited due to the large separation between the donor and acceptor states.
Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi2O2Se Nanosheets

Qifeng Cai,Congwei Tan,Jingyue Wang,Teng Tu,Shuang Sun,Xiaokang Li,Baotong Zhang,Haixia Li,Xiaoyan Xu,Xia An,Xing Zhang,Ru Huang,Hailin Peng,Ming He,Ming Li

DOI: https://doi.org/10.1109/led.2021.3073418

IF: 4.8157

2021-06-01

IEEE Electron Device Letters

Abstract:In this letter, the electronic transport features of layered two-dimensional (2D) Bi2 O2 Se semiconductor nanosheets are characterized along the in-plane and the out-of-plane directions, respectively. The modulation of double gate is manufactured on a 26.4 nm CVD-grown Bi2 O2 Se-nanosheet MOSFET, thus executing the highest in-plane field-effect mobility of ~296 cm2 V−1s−1 at room temperature. Furthermore, the rectification behavior of charge transport across the perpendicular interlayer of Bi2 O2 Se nanosheet is distinctly scrutinized. Correspondingly, the existing of potential barrier between the [Bi2 O2] ${}^{2n+}$ and [Se] ${}^{2n-}$ interlayers of Bi2 O2 Se nanosheets is validated by the temperature-dependent current measurement and the Poole-Frenkel model. This work offers promising routes to implement high-efficient field-effect transports parallel to the in-plane direction, as well as tunable heterojunction transports across the perpendicular interlayer of 2D Bi2 O2 Se nanosheets.

engineering, electrical & electronic

Cross-plane transport in a single-molecule two-dimensional van der Waals heterojunction

Cross-plane Transport in a Single-Molecule Two-Dimensional Van Der Waals Heterojunction.

A van der Waals pn heterojunction with organic/inorganic semiconductors

Cross-Plane Carrier Transport in Van der Waals Layered Materials

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Charge transport through single-molecule bilayer-graphene junctions with atomic thickness

Ultrafast carriers' separation imaging in WS2-WSe2 in plane heterojunction by transient reflectivity microscopy

A van der Waals heterojunction strategy to fabricate layer-by-layer single-molecule switch

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS 2 Heterobilayers

Two-dimensional hot-electron transport in GaAs-AlGaAs heterojunctions

Van Der Waals Heterostructures: Interfacial Charge Behavior Modulation in Perovskite Quantum Dot‐Monolayer MoS2 0D‐2D Mixed‐Dimensional Van Der Waals Heterostructures (adv. Funct. Mater. 34/2018)

Out-of-plane dipole-modulated photogenerated carrier separation and recombination at Janus-MoSSe/MoS2 van der Waals heterostructure interfaces: Ab initio time-domain study

Hybrid van der Waals heterojunction based on two-dimensional materials

Magnon Transport in Quasi-Two-Dimensional van der Waals Antiferromagnets

Light-Driven Ionic and Molecular Transport through Atomically Thin Single Nanopores in MoS2/WS2 Heterobilayers

Realization of Vertical and Lateral Van Der Waals Heterojunctions Using Two-Dimensional Layered Organic Semiconductors

Unraveling energy and charge transfer in type-II van der Waals heterostructures

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS2 Heterobilayers.

Heteroatom-Induced Molecular Asymmetry Tunes Quantum Interference in Charge Transport through Single-Molecule Junctions

Photogenerated-Carrier Separation and Transfer in Two-Dimensional Janus Transition Metal Dichalcogenides and Graphene Van Der Waals Sandwich Heterojunction Photovoltaic Cells.

Coplanar High Mobility and Interplanar Van Der Waals Heterojunction in Layered Two-Dimensional Bi2O2Se Nanosheets