Strain-induced creation and switching of anion vacancy layers in perovskite oxynitrides
Takafumi Yamamoto,Akira Chikamatsu,Shunsaku Kitagawa,Nana Izumo,Shunsuke Yamashita,Hiroshi Takatsu,Masayuki Ochi,Takahiro Maruyama,Morito Namba,Wenhao Sun,Takahide Nakashima,Fumitaka Takeiri,Kotaro Fujii,Masatomo Yashima,Yuki Sugisawa,Masahito Sano,Yasushi Hirose,Daiichiro Sekiba,Craig M. Brown,Takashi Honda,Kazutaka Ikeda,Toshiya Otomo,Kazuhiko Kuroki,Kenji Ishida,Takao Mori,Koji Kimoto,Tetsuya Hasegawa,Hiroshi Kageyama
DOI: https://doi.org/10.1038/s41467-020-19217-7
IF: 16.6
2020-11-23
Nature Communications
Abstract:Abstract Perovskite oxides can host various anion-vacancy orders, which greatly change their properties, but the order pattern is still difficult to manipulate. Separately, lattice strain between thin film oxides and a substrate induces improved functions and novel states of matter, while little attention has been paid to changes in chemical composition. Here we combine these two aspects to achieve strain-induced creation and switching of anion-vacancy patterns in perovskite films. Epitaxial SrVO 3 films are topochemically converted to anion-deficient oxynitrides by ammonia treatment, where the direction or periodicity of defect planes is altered depending on the substrate employed, unlike the known change in crystal orientation. First-principles calculations verified its biaxial strain effect. Like oxide heterostructures, the oxynitride has a superlattice of insulating and metallic blocks. Given the abundance of perovskite families, this study provides new opportunities to design superlattices by chemically modifying simple perovskite oxides with tunable anion-vacancy patterns through epitaxial lattice strain.
multidisciplinary sciences