Regulation of oxygen vacancy types on SnO2 (110) surface by external strain

Z. H. Zhou,Y.M. Min,X. X. Liu,J. Q. Ding,L. Z. Liu
DOI: https://doi.org/10.48550/arXiv.1611.04892
2016-11-15
Abstract:In tin dioxide nanostructures, oxygen vacancies (OVs) play an important role in their optical properties and thus regulation of both OV concentration and type via external strain is crucial to exploration of more applications. First-principle calculations of SnO2 (110) surface disclose that asymmetric deformations induced by external strain not only lead to its intrinsic surface elastic changes, but also result in different OV formation energy. In the absence of external strain, the energetically favorable oxygen vacancies (EFOV) appear in the bridging site of second layer. When -3.5% external strain is applied along y direction, the EFOV moves into plane site. This can be ascribed that the compressed deformation gives rise to redistribution of electronic wave function near OVs, therefore, formation of newly bond structures. Our results suggest that different type OVs in SnO2 surface can be controlled by strain engineering.
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the problem of modulating the types of oxygen vacancies (OVs) and their formation energies in tin dioxide (SnO_2) nanostructures through external strain. Specifically, the researchers focus on how to control different types of oxygen vacancies on the SnO_2 surface through external strain engineering to explore more application possibilities. The paper points out that in the absence of external strain, the energetically most favorable oxygen vacancy (EFOV) appears at the bridging position of the second layer. When an external strain of - 3.5% is applied along the y - direction, the EFOV will move to the planar position. This change is attributed to the redistribution of the electron wave function caused by compressive deformation, thus forming a new bond structure. The research results show that different types of oxygen vacancies can be controlled by strain engineering, which is of great significance for epitaxial growth or the fabrication of SnO_2 nanostructures using specific substrates.